<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Wu, Yu-ShengSubject: search.filters.subject.FinFET

Search Results

Now showing 1 - 4 of 4
  • Thumbnail Image
    Item type:Item,
    Investigation of random dopant fluctuation for multi-gate metal-oxide-semiconductor field-effect transistors using analytical solutions of three-dimensional Poisson's equation
    (2008-04-01)
    Wu, Yu-Sheng
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper investigates the random dopant fluctuation of multi-gate metal-oxide-semi conductor field-effect transistors (MOSFETs) using analytical solutions of three-dimensional (3D) Poisson's equation verified with device simulation. Especially, we analyze the impact of aspect ratio on the random dopant fluctuation in multi-gate devices. Our study indicates that with a given total width, lightly doped fin-type FET (FinFET) shows the smallest threshold voltage (V(th)) dispersion because of its smaller Vth sensitivity to the channel doping. For heavily doped devices, quasi-planar shows smaller V(th) dispersion because of its larger volume. The Vth dispersion caused by random dopant fluctuation may still be significant in the lightly doped channel, especially for tri-gate and quasi-planar devices.
  • Thumbnail Image
    Item type:Item,
    Sensitivity of multigate MOSFETs to process variations - An assessment based on analytical solutions of 3-D Poisson's equation
    (2008-05-01)
    Wu, Yu-Sheng
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper investigates the sensitivity of multigate MOSFETs to process variations using analytical solutions of 3-D Poisson's equation verified with device simulation. FinFET and Tri-gate with both heavily doped and lightly doped channels have been examined regarding their immunity to process-induced variations and dopant number fluctuation. Our study indicates that lightly doped FinFET has the smallest threshold voltage (V-th) dispersion caused by process variations and dopant number fluctuation. For heavily doped devices, dopant number fluctuation may become the dominant factor in the determination of overall V-th variation. The V-th dispersion of Tri-gate may therefore be smaller than that of FinFET because of its better immunity to dopant number fluctuation.
  • Thumbnail Image
    Item type:Item,
    Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations-A Comparison With Multigate MOSFETs
    (2008-11-01)
    Wu, Yu-Sheng
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper investigates the sensitivity of gate-all-around (GAA) nanowire (NW) to process variations compared with multigate devices using analytical solutions of Poisson's equation verified with device simulation. GAA NW and multigate devices with both heavily doped and lightly doped channels have been examined regarding their immunity to process-induced variations and dopant number fluctuation. Our study indicates that the lightly doped GAA NW has the smallest threshold voltage (V-th) dispersion caused by process variations and dopant number fluctuation. Specifically, the GAA NW shows better immunity to channel thickness variation than multigate devices because of its inherently superior surrounding gate structure. For heavily doped devices, dopant number fluctuation may become the dominant factor in the determination of overall V-th variation. The V-th dispersion of GAA NW may therefore be larger than that of multigate MOSFETs because of its larger surface-to-volume ratio.
  • Thumbnail Image
    Item type:Item,
    Investigation of Cell Stability and Write Ability of FinFET Subthreshold SRAM Using Analytical SNM Model
    (2010-06-01)
    Fan, Ming-Long
    ;
    Wu, Yu-Sheng
    ;
    Hu, Vita Pi-Ho
    ;
    Su, Pin
    ;
    Chuang, Ching-Te
    In this paper, the static noise margin (SNM) of FinFET static random access memory (SRAM) cells operating in the subthreshold region was investigated using an analytical solution of 3-D Poisson's equation. An analytical SNM model for subthreshold FinFET SRAM was demonstrated and validated by 3-D technology computer-aided design (TCAD) mixed-mode simulations. When compared with bulk SRAM, the standard 6T FinFET cell showed larger nominal READ SNM (RSNM), better variability immunity, and lesser temperature sensitivity of cell stability. Furthermore, examination of the stabilities of several novel independently controlled gate FinFET SRAM cells by using the proposed SNM model showed significant nominal RSNM improvements in these novel cells. However, the write ability is found to be degraded, which thus becomes an important concern for certain configurations in the subthreshold region. The result obtained indicates that the READ/WRITE word line voltage control technique is more effective than transistor sizing in improving the stability and write ability of the FinFET subthreshold SRAM. Furthermore, the impacts of process-induced variations on cell stability were also assessed. When compared with RSNM, it was found that WRITE SNM is more susceptible to process variations. While 6T is not a viable candidate for subthreshold SRAM, and 8T/10T cells must be used in bulk CMOS, the present analysis established the potential of 6T FinFET cells for subthreshold SRAM applications.