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Author: search.filters.author.Wu, Yu-ShengSubject: search.filters.subject.quantum confinement (QC)

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Now showing 1 - 3 of 3
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    Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs
    (2011-01-01)
    Wu, Yu-Sheng
    ;
    Hsieh, Hsin-Yuan
    ;
    Hu, Vita Pi-Ho
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and thin-buried-oxide germanium-on-insulator (GeOI) MOSFETs using an analytical solution of Schrodinger equation verified with TCAD simulation. Our study indicates that, although the QC effect increases the threshold voltage (V(th)) roll-off when the channel thickness (T(ch)) is larger than a critical value (T(ch,crit)), it may decrease the V(th) roll-off of GeOI MOSFETs when the T(ch) is smaller than T(ch,crit). Since Ge and Si channels exhibit different degrees of confinement and T(ch,crit), the impact of QC must be considered when one-to-one comparisons between UTB GeOI and Si-on-insulator MOSFETs regarding the SCE are made.
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    Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs
    (2012-07-01)
    Yu, Chang-Hung
    ;
    Wu, Yu-Sheng
    ;
    Hu, Vita Pi-Ho
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    This paper investigates the impact of quantum confinement (QC) on the backgate-bias (V-bg) modulated subthreshold and threshold-voltage (V-th) characteristics of ultra-thin-body germanium-on-insulator (UTB GeOI) MOSFETs using an analytical solution of the Schrodinger equation verified with TCAD numerical simulation. Our study indicates that the QC effect reduces the sensitivity of the subthreshold swing to V-bg. In addition, the sensitivity of V-th to V-bg can be enhanced by the QC effect particularly for electrostatically well-behaved UTB MOSFETs with triangular potential well. Aside from that, the sensitivity of V-th roll-off to V-bg is reduced by the QC effect. Since Ge and Si channels exhibit different degrees of QC due to different quantization effective mass, the impact of QC has to be considered when one-to-one comparisons between GeOI and SOI MOSFETs regarding the backgate-bias modulated threshold-voltage and subthreshold characteristics are made. Our study may provide insights for multi-V-th device/circuit designs using advanced UTB GeOI technologies.
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    Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
    (2012-03-01)
    Yu, Chang-Hung
    ;
    Wu, Yu-Sheng
    ;
    Hu, Vita Pi-Ho
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    This paper investigates the electrostatic integrity (EI) of ultra-thin-body (UTB) germanium-on-insulator (GeOI) and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using a derived analytical solution of Schrodinger equation verified with TCAD numerical simulation. Although the electron conduction path of the high-mobility channel device can be far from the frontgate interface due to high channel permittivity, our study indicates that the quantum confinement effect can move the carrier centroid toward the frontgate and, therefore, improve the subthreshold swing (SS) of the UTB device. Since InGaAs, Ge, and Si channels exhibit different degrees of quantum confinement due to different quantization effective mass, the impact of quantum confinement has to be considered when one-to-one comparisons among UTB InGaAs-OI, GeOI, and SOI MOSFETs regarding the subthreshold swing and electrostatic integrity are made.