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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Wu, Yu-ShengSubject: search.filters.subject.variation

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Now showing 1 - 3 of 3
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    Impact of Surface Orientation on the Sensitivity of FinFETs to Process Variations-An Assessment Based on the Analytical Solution of the Schrodinger Equation
    (2010-12-01)
    Wu, Yu-Sheng
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper investigates the impact of surface orientation on V(th) sensitivity to process variations for Si and Ge fin-shaped field-effect transistors (FinFETs) using an analytical solution of the Schrodinger equation. Our theoretical model considers the parabolic potential well due to short-channel effects and, therefore, can be used to assess the quantum-confinement effect in short-channel FinFETs. Our study indicates that, for ultrascaled FinFETs, the importance of channel thickness (t(ch)) variations increases due to the quantum-confinement effect. The Si-(100) and Ge-(111) surfaces show lower V(th) sensitivity to the t(ch) variation as compared with other orientations. On the contrary, the quantum-confinement effect reduces the V(th) sensitivity to the L(eff) variation, and Si-(111) and Ge-(100) surfaces show lower V(th) sensitivity as compared with other orientations. Our study may provide insights for device design and circuit optimization using advanced FinFET technologies.
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    Sensitivity of multigate MOSFETs to process variations - An assessment based on analytical solutions of 3-D Poisson's equation
    (2008-05-01)
    Wu, Yu-Sheng
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper investigates the sensitivity of multigate MOSFETs to process variations using analytical solutions of 3-D Poisson's equation verified with device simulation. FinFET and Tri-gate with both heavily doped and lightly doped channels have been examined regarding their immunity to process-induced variations and dopant number fluctuation. Our study indicates that lightly doped FinFET has the smallest threshold voltage (V-th) dispersion caused by process variations and dopant number fluctuation. For heavily doped devices, dopant number fluctuation may become the dominant factor in the determination of overall V-th variation. The V-th dispersion of Tri-gate may therefore be smaller than that of FinFET because of its better immunity to dopant number fluctuation.
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    Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations-A Comparison With Multigate MOSFETs
    (2008-11-01)
    Wu, Yu-Sheng
    ;
    Su, Pin
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper investigates the sensitivity of gate-all-around (GAA) nanowire (NW) to process variations compared with multigate devices using analytical solutions of Poisson's equation verified with device simulation. GAA NW and multigate devices with both heavily doped and lightly doped channels have been examined regarding their immunity to process-induced variations and dopant number fluctuation. Our study indicates that the lightly doped GAA NW has the smallest threshold voltage (V-th) dispersion caused by process variations and dopant number fluctuation. Specifically, the GAA NW shows better immunity to channel thickness variation than multigate devices because of its inherently superior surrounding gate structure. For heavily doped devices, dopant number fluctuation may become the dominant factor in the determination of overall V-th variation. The V-th dispersion of GAA NW may therefore be larger than that of multigate MOSFETs because of its larger surface-to-volume ratio.