<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2004 - 20063

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Yan, JKSubject: search.filters.subject.chemical vapor deposition

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    Diamond deposition on Au/amorphotis Si thin films
    (2004-04-01)
    Kao, CK
    ;
    Yan, JK
    ;
    Chang, L
    ;
    Cho, SY
    ;
    Chen, HG
    Au/amorphous Si/SiO2/Si structure was used as substrate for diamond deposition by microwave plasma CVD. The Au-Si phase diagram shows a eutectic point at 363 degreesC. At deposition temperatures of 700-800 degreesC, the Au and amorphous Si films were alloyed as liquid during deposition, which resulted in formation of an array of single crystalline Si whiskers. Microstructural characterization shows that the Si whiskers have a diameter in the range of 50 nm-5 mum with facet on the top surface. The Si whiskers are shown to be oriented along <311> directions. Diamond particles deposited are found only on top of the Si whiskers. The diamond particles can be either of polycrystalline or single crystalline characteristics. (C) 2004 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Chemical vapor deposition of uniform and high-quality diamond films by bias-enhanced nucleation method
    (2006-03-01)
    Yan, JK
    ;
    Chang, L
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Diamond films on 1 x 1 cm(2) Si (100) substrates were synthesized by microwave plasma chemical vapor deposition (MWCVD) using mixture of methane and hydrogen gases. Bias-enhanced nucleation method was used to avoid any mechanical pretreatments. Distribution of deposited diamond crystallites in terms of density, size, and morphology has been significantly improved over all the Si substrate surface area by using a novel designed Mo anode. Films were characterized from the center to the edges of substrates using scanning electron microscopy, transmission electron microscope, and Raman analysis. The results also show that uniform diamond films can be obtained by short bias nucleation period using a dome-shaped Mo anode. The diamond crystallites were directly deposited on Si substrate. Using 2% CH4 in the growth stage, high quality diamond films in the < 100 > texture can be obtained with relatively smooth surface. (c) 2005 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Growth and characterization of chemical-vapor-deposited zinc oxide nanorods
    (2006-03-01)
    Wu, CL
    ;
    Chang, L
    ;
    Chen, HG
    ;
    Lin, CW
    ;
    Chang, TF
    ZnO nanorods were grown on Si substrates by metal-organic chemical vapor deposition (CVD). The ZnO nanorods were characterized by scanning electron microscopy, transmission electron microscopy (TEM), and X-ray diffraction. It was found that highly oriented ZnO single-crystalline nanorods were formed only on the substrate coated with a gold film. Without the gold, ZnO was deposited as a continuous film. No Au was observed on top of the ZnO nanorods, implying that the Au plays no role as catalytic metal in vapor-liquid-solid mechanism for formation of ZnO nanorods. In CVD, oriented ZnO nanorods along the c-axis were grown as a result of < 111 > textured Au. High-resolution TEM shows that the gold layer and ZnO are in orientation relationship of Au 111 planes//ZnO (0002) basal planes. (c) 2005 Elsevier B.V. All rights reserved.