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Author: search.filters.author.Yang, MYSubject: search.filters.subject.PbTiO3

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    Item type:Item,
    Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
    (2002-02-17)
    Sun, CL
    ;
    Chen, SY
    ;
    Yang, MY
    ;
    Chin, A
    ;
    材料科學與工程學系
    Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
    (2003-02-17)
    Sun, CL
    ;
    Chen, SY
    ;
    Yang, MY
    ;
    Chin, A
    ;
    材料科學與工程學系
    Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.