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Author: search.filters.author.Yang, MYSubject: search.filters.subject.dielectric constant

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Now showing 1 - 4 of 4
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    Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
    (2002-02-17)
    Sun, CL
    ;
    Chen, SY
    ;
    Yang, MY
    ;
    Chin, A
    ;
    材料科學與工程學系
    Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Item type:Item,
    Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
    (2003-02-17)
    Sun, CL
    ;
    Chen, SY
    ;
    Yang, MY
    ;
    Chin, A
    ;
    材料科學與工程學系
    Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
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    High-density MIM canpacitors using AlTaOx dielectrics
    (2003-05-01)
    Yang, MY
    ;
    Huang, CH
    ;
    Chin, A
    ;
    Zhu, CX
    ;
    Li, MF
    The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
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    Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
    (2003-10-01)
    Yang, MY
    ;
    Huang, CH
    ;
    Chin, A
    ;
    Zhu, CX
    ;
    Cho, BJ
    Using high-kappa, Al2O3 doped Ta2O5 dielectric, we have obtained record high MINI capacitance density of 17 fF/mum(2) at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 x 10(-7) A/cm(2). In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 x 10(-12) A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-mum MOSFET. This very high capacitance density with good MINI capacitor characteristics can significantly reduce the chip size of RF ICs.