<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2001 - 20042

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Yang, WLSubject: search.filters.subject.NH3

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item type:Item,
    High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
    (2001-02-01)
    Pan, TM
    ;
    Lei, TF
    ;
    Yang, WL
    ;
    Cheng, CM
    ;
    Chao, TS
    In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA NaO oxidation, show excellent electrical properties in terms of very high electric breakdown field, ion; leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.
  • Thumbnail Image
    Item type:Item,
    Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxides
    (2004-11-01)
    Yang, WL
    ;
    Chao, TS
    ;
    Lai, KH
    ;
    電子物理學系
    ;
    Department of Electrophysics
    High-performance p(+)-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide'instead of the conventional O-2-grown oxide. It is found that NH3-nitrided or N2O-grown oxide can suppress boron penetration in the p(+)-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.