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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Yeh, KLHas files: No

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    Determination of effective density-of-states using a novel Schottky barrier poly-Si thin-film transistor
    (2005)
    Lin, HC
    ;
    Lee, MH
    ;
    Yeh, KL
    ;
    Huang, TY
    ;
    電子工程學系及電子研究所
    We demonstrate that it is possible to extract the defect density distribution within the entire energy gap of a poly-Si layer by using a novel Schottky barrier thin-film transistor test structure. Our methodology, albeit based on the well-known field-effect conductance method, does not require two separate n- and p-channel test devices necessary in the conventional methods. This unique and much simplified single-test-device feature is made possible thanks to the ambipolar characteristics and the suppression of subthreshold leakage current in the new test scheme. Effects of process treatments such as plasma hydrogenation could also be clearly resolved using the new test structure. (c) 2005 The Electrochemical Society. All rights reserved.
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    Characteristics of Schottky barrier poly-Si thin film transistors with excimer laser annealing treatment
    (2003)
    Yeh, KL
    ;
    Lin, HC
    ;
    Tsai, RW
    ;
    Lee, MH
    ;
    Huang, TY
    Poly-Si Schottky barrier poly-Si thin-film transistors (SB TFT) with field-induced drain (FID) have recently been demonstrated. Such devices exhibit ambipolar operation capability with low off-state leakage current. In this study, we investigate and compare the characteristics of poly-Si SB TFTs with channel layer prepared by either excimer laser crystallization (ELC) or solid-phase crystallization (SPC) method. It is shown that the use of ELC could greatly improve the device characteristics compared to the SPC counterparts. Excellent device performance in terms of steep subthreshold slope and high on/off current ratio (>10(8)) for both p- and n-channel operations are demonstrated on a single device with ELC channel. The effects of sub-gate bias, channel length, and offset channel length, on device characteristics are also explored.