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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 7 of 7
  • Item type:Item,
    Tuning the Competition between Ferromagnetism and Antiferromagnetism in a Half-Doped Manganite through Magnetoelectric Coupling
    (2013-09-18)
    Yi, Di
    ;
    Liu, Jian
    ;
    Okamoto, Satoshi
    ;
    Jagannatha, Suresha
    ;
    Chen, Yi-Chun
    We investigate the possibility of controlling the magnetic phase transition of the heterointerface between a half-doped manganite La0.5Ca0.5MnO3 and a multiferroic BiFeO3 (BFO) through magnetoelectric coupling. Using macroscopic magnetometry and element-selective x-ray magnetic circular dichroism at the Mn and Fe L edges, we discover that the ferroelectric polarization of BFO controls simultaneously the magnetization of BFO and La0.5Ca0.5MnO3 (LCMO). X-ray absorption spectra at the oxygen K edge and linear dichroism at the Mn L edge suggest that the interfacial coupling is mainly derived from the superexchange between Mn and Fe t(2g) spins. The combination of x-ray absorption spectroscopy and mean-field theory calculations reveals that the d-electron modulation of Mn cations changes the magnetic coupling in LCMO, which controls the enhanced canted moments of interfacial BFO via the interfacial coupling. Our results demonstrate that the competition between ferromagnetic and antiferromagnetic instability can be modulated by an electric field at the heterointerface, providing another pathway for the electrical field control of magnetism.
  • Item type:Item,
    Direct spectroscopic evidence of charge reversal at the Pb(Zr0.2Ti0.8)O-3/La0.7Sr0.3MnO3 heterointerface
    (2011-01-21)
    Wu, Chung-Lin
    ;
    Lee, Pei-Wei
    ;
    Chen, Yi-Chun
    ;
    Chang, Lo-Yueh
    ;
    Chen, Chia-Hao
    At the heterointerface of a top ferroelectric Pb(Zr0.2Ti0.8)O-3 (PZT) ultrathin film and a bottom La0.7Sr0.3MnO3 (LSMO) electrode, we used continuous synchrotron-radiation photoelectron spectroscopy to probe in situ and demonstrated that the interfacial charges are reversible and their affected valence-band barrier height becomes modulated upon switching the polarization in the top layer. By monitoring the core-level shifting of the buried LSMO layer under continuous illumination of synchrotron radiation, we directly observed a temporal screening of polarization induced by the photon-generated carriers in the top PZT layer. This dynamic characterization of the core-level shifting of the buried layer demonstrates an effective method to probe the electric conduction and ferroelectric polarization of an ultrathin ferroelectric oxide thin film.
  • Item type:Item,
    Interface dipole between two metallic oxides caused by localized oxygen vacancies
    (2012-10-11)
    Borisevich, Albina Y.
    ;
    Lupini, Andrew R.
    ;
    He, Jun
    ;
    Eliseev, Eugene A.
    ;
    Morozovska, Anna N.
    Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here, we report a study of SrRuO3 and La0.7Sr0.3MnO3 interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy-loss spectroscopy, and density functional calculations. Cation displacements are observed at the interface, indicative of a dipolelike electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-interface La0.7Sr0.3MnO3 layers. The results suggest that atomic-scale structural mapping can serve as a quantitative indicator of the presence of O vacancies at interfaces.
  • Item type:Item,
    A nanoscale shape memory oxide
    (2013-11-01)
    Zhang, Jinxing
    ;
    Ke, Xiaoxing
    ;
    Gou, Gaoyang
    ;
    Seidel, Jan
    ;
    Xiang, Bin
    Stimulus-responsive shape-memory materials have attracted tremendous research interests recently, with much effort focused on improving their mechanical actuation. Driven by the needs of nanoelectromechanical devices, materials with large mechanical strain, particularly at nanoscale level, are therefore desired. Here we report on the discovery of a large shape-memory effect in bismuth ferrite at the nanoscale. A maximum strain of up to similar to 14% and a large volumetric work density of similar to 600 +/- 90 J cm(-3) can be achieved in association with a martensitic-like phase transformation. With a single step, control of the phase transformation by thermal activation or electric field has been reversibly achieved without the assistance of external recovery stress. Although aspects such as hysteresis, microcracking and so on have to be taken into consideration for real devices, the large shape-memory effect in this oxide surpasses most alloys and, therefore, demonstrates itself as an extraordinary material for potential use in state-of-art nanosystems.
  • Item type:Item,
    Atomically Resolved Mapping of Polarization and Electric Fields Across Ferroelectric/Oxide Interfaces by Z-contrast Imaging
    (2011-06-03)
    Chang, Hye Jung
    ;
    Kalinin, Sergei V.
    ;
    Morozovska, Anna N.
    ;
    Huijben, Mark
    ;
    Chu, Ying-Hao
    Direct atomic displacement mapping at ferroelectric interfaces by aberration corrected scanning transmission electron microscopy (STEM) (a-STEM image, b-corresponding displacement profile) is combined with the Landau-Ginsburg-Devonshire theory to obtain the complete interface electrostatics in real space, including separate estimates for the polarization and intrinsic interface charge contributions.
  • Item type:Item,
    Oxide interfaces: pathways to novel phenomena
    (2012-07-01)
    Yu, Pu
    ;
    Chu, Ying-Hao
    ;
    Ramesh, Ramamoorthy
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Novel phenomena and functionalities at artificial heterointerfaces have been attracting extensive scientific attention in both materials science and fundamental condensed matter physics. The interplay between degrees of freedom at interfaces of complex oxides could lead to exotic and unexpected states of matter. In this article, using the model system of BiFeO3 and La0.7Sr0.3MnO3, we review recent progress on our understanding of the novel states formed at this heterointerface. Furthermore, we discuss how emergent interfacial phenomena can be employed to influence the bulk properties of these materials. We summarize by highlighting several possible and promising directions for future study.
  • Item type:Item,
    Tunable Metallic Conductance in Ferroelectric Nanodomains
    (2012-01-01)
    Maksymovych, Peter
    ;
    Morozovska, Anna N.
    ;
    Yu, Pu
    ;
    Eliseev, Eugene A.
    ;
    Chu, Ying-Hao
    Metallic conductance in charged ferroelectric domain walls was predicted more than 40 years ago as the first example of an electronically active homointerface in a nonconductive material. Despite decades of research on oxide interfaces and ferroic systems, the metal-insulator transition induced solely by polarization charges without any additional chemical modification has consistently eluded the experimental realm. Here we show that a localized insulator-metal transition can be repeatedly induced within an insulating ferroelectric lead-zirconate titanate, merely by switching its polarization at the nanoscale. This surprising effect is traced to tilted boundaries of ferroelectric nanodomains, that act as localized homointerfaces within the perovskite lattice, with inherently tunable carrier density. Metallic conductance is unique to nanodomains, while the conductivity of extended domain walls and domain surfaces is thermally activated. Foreseeing future applications, we demonstrate that a continuum of nonvolatile metallic states across decades of conductance can be encoded in the size of ferroelectric nanodomains using electric field.