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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 7 of 7

A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors
(2004-10-01)
Li, Yiming
;
Yu, Shao-Ming
;
資訊工程學系
;
電信工程研究所
;
友訊交大聯合研發中心
A unified physical-based model parameter extraction technique for excimer laser annealed lower temperature polycrystalline silicon (LTPS) complementary thin film transistors (TFTs) is for the first time proposed. For two well-known compact models of LTPS TFT, Rensselaer Polytechnic Institute (RPI) V1 and V2 models, our approach sequentially optimizes the model parameters in the regions of linear, subthreshold, saturation, and leakage. Compared with the measured results, the extracted I-D - V-G, I-D - V-D, transconductance, and output conductance are within 3% of accuracy. The agreement with the experimental data is excellent for the n- and p-type LTPS TFTs with different length and width. This extraction technique bridges the fabrication of LTPS TFTs and the design of complementary system on panel circuits.
A unified optimization framework for real world problems
(2006)
Li, Yiming
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Yu, Shao-Ming
;
電信工程研究所
;
Institute of Communications Engineering
In this paper, an object-oriented unified optimization framework (UOF) for general problem optimization is developed. Based on global evolutionary algorithms, numerical deterministic methods, and C++ objective design, the UOF itself has great potential to perform optimization operations on kind of problems. The UOF provides basic interfaces to define a general problem and generic solver;, hence the two different parts are bridged. The UOF components are categorized into problem and solver parts and work independently. Therefore, reutilization of the high level code allows an adaptation to new problem and solver quickly. We customize the UOF to deal with some real world optimization problems.
A comparative study of foreign direct investment flow using diffusion models
(2007)
Li, Yiming
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Chiang, Yi-Hui
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Yu, Shao-Ming
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Chiang, Su-Yun
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Hung, C. -H.
In this work, we apply an improvement dynamic model of the foreign direct investment (FDI) flow to analyze the evolution of FDI flow. In comparison with the fundamental growth model of FDI, the simulation result is further accurate if the asymmetric growth pattern and heterogeneity of the potential adopters are considered. According to the result, the internal influence dominates the growth of FDI flow from Taiwan to China during 2001-2006, taking the electronics industry for example.
A simulation-based hybrid optimization technique for low noise amplifier design automation
(2007)
Li, Yiming
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Yu, Shao-Ming
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Li, Yih-Lang
;
電信工程研究所
;
Institute of Communications Engineering
In this paper, a simulation-based optimization technique for integrated circuit (IC) design automation is presented. Based on a genetic algorithm (GA), Levenberg-Marquardt (LM) method, and circuit simulator, a window-interfaced prototype of computer-aided design (CAD) is developed for IC design. Considering low noise amplifier (LNA) IC, we simultaneously evaluate specifications including S parameters, K factor, noise figure, and input third-order intercept point in the optimization process. If the simulated results meet the aforementioned constraints, the prototype outputs the optimized parameters. Otherwise, CAD activates GA for global optimization; simultaneously, LM method searches solutions with the results of GA. The prototype then calls a circuit simulator to compute and evaluate newer results until all specifications are matched. More than fifteen parameters including device sizes, passive components, and biasing conditions are optimized for the aforementioned constraints. For LNA IC with 0.18 mu m metal-oxide-silicon filed effect transistors, benchmark results confirm the functionality of the implemented prototype.
Simulation-based evolutionary method in antenna design optimization for WLAN and wireless communication applications
(2007)
Li, Yiming
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Yu, Shao-Ming
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Kuo, Yi-Ting
;
Lie, Yih-Lang
;
電信工程研究所
In this paper, a simulation-based optimization method for the design of antenna pattern applied for mobile broadcasting and the 802.11a WLAN is presented. Based on genetic algorithm (GA), numerical simulation, and unified optimization framework, the optimization methodology is proposed for the antenna design automation. A Z-shaped antenna is optimized with respect to the return loss by our method. Inspired by the scenario of GA for optical proximity correction in our earlier work, we firstly partition the edges of the antenna into segments, and then adjust the movements of each segment to construct the geometry of new antenna. The external simulator is then called to simulate and evaluate the performance of the new antenna. If the simulated results meet the specific constraints, we output the optimized antenna. Otherwise, the evolutionary algorithms will enable us to search solution again. Our preliminary results confirm the robustness and efficiency of the proposed simulation-based optimization method.
An optimal silicidation technique for electrostatic discharge protection sub-100 nm CMOS devices in VLSI circuit
(2007-02-01)
Yu, Shao-Ming
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Lee, Jam-Wen
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Li, Yiming
;
資訊工程學系
;
電信工程研究所
In this paper we propose a silicide design consideration for electrostatic discharge (ESD) protection in nanoscale CMOS devices. According to our practical implementation, it is found that a comprehensive silicide optimization can be achieved on the gate, drain, and source sides with very few testkey designs. Our study shows that there is a high characteristic efficiency for various conditions in particular, for optimizing the performance of sub-100 nm complementary metal-oxide-semiconductor devices in system-on-a-chip era. (c) 2006 Elsevier B.V. All rights reserved.
A coupled-simulation-and-optimization approach to nanodevice fabrication with minimization of electrical characteristics fluctuation
(2007-11-01)
Li, Yiming
;
Yu, Shao-Ming
;
資訊工程學系
;
電信工程研究所
;
Department of Computer Science
In this paper, a simulation-based optimization methodology for nanoscale complementary metal-oxide-semiconductor (CMOS) device fabrication is advanced. Fluctuation of electrical characteristics is simultaneously considered and minimized in the optimization procedure. Integration of device and process simulation is implemented to evaluate device performances, where the hybrid intelligent approach enables us to extract optimal recipes which are subject to targeted device specification. Production of CMOS devices now enters the technology node of 65 nm; therefore, random-dopant-induced characteristic fluctuation should be minimized when a set of fabrication parameters is suggested. Verification of the optimization methodology is tested and performed for the 65-nm CMOS device. Compared with realistic fabricated and measured data, this approach can achieve the device characteristics; e.g., for the explored 65-nm n-type MOS field effect transistor, the on-state current > 0.35 mA/mu m, the off-state current < 1.5e - 11 A/mu m, and the threshold voltage = 0.43 V. Meanwhile, it reduces the threshold voltage fluctuation (sigma(vth) similar to 0.017 V). This approach provides an alternative to accelerate the tuning of process parameters and benefits manufacturing of nanoscale CMOS devices.

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