<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Zan, HWSubject: search.filters.subject.(LPCVD)

Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Item type:Item,
    Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors
    (2002-09-26)
    Peng, DZ
    ;
    Zan, HW
    ;
    Shih, PS
    ;
    Chang, TC
    ;
    Lin, CW
    The ultra-high vacuum chemical vapor deposition (UHVCVD) system can deposit poly-Si film without any laser or furnace annealing. The uniformity of threshold voltage and mobility is superior to that deposited by low-pressure chemical vapor deposition (LPCVD) system. However, due to the deposition in polycrystalline phase for UHVCVD, the film surface is rough and results in low field effect mobility compared to that obtained by LPCVD using disilane (Si2H6) in amorphous phase followed by solid phase crystallization (SPC). The on-off current ratio for UHVCVD deposited poly-Si thin film transistors (TFTs) is approximately one order smaller, however, the leakage current for LPCVD SPC TFTs is higher. In this experiment, NH3 was introduced to both of the two samples to improve the device performance. It can be shown that improvements on device characteristics are more significant for UHVCVD deposited poly-Si TFTs, e.g. threshold voltage decreased dramatically and the on-off current ratio improved by two orders of magnitude. (C) 2002 Elsevier Science Ltd. All rights reserved.