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Author: search.filters.author.Zhang, RuiSubject: search.filters.subject.ITO

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    Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
    (2016-04)
    Tsai, Tsung-Ming
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Zhang, Rui
    ;
    Wang, Tong
    DThis letter investigates the double-ended resistive switching characteristics of indium tin oxide (ITO) resistance random access memory (RRAM). Resistive switching can be achieved around both the active TiN electrode and the inert Pt electrode. In addition, complementary resistance switching (CRS) characteristics can be observed without current compliance during dc voltage sweep operations. Electrical measurement data fitting results indicate that the oxygen-rich ITO near top and bottom electrodes works as a double-ended resistive switching layer. Based on the analysis of the current conduction mechanism, we propose a physical model to interpret the CRS behaviors in ITO RRAM devices.
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    Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid
    (2015-06-01)
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Zhang, Rui
    ;
    Chen, Kai-Huang
    Supercritical carbon dioxide (SCCO2) fluid technology was applied to indium-tin-oxide (ITO) electrode to improve the resistive switching characteristic of silicon oxide RRAM through hydride oxidation for the first time. We found device power consumption can be effectively reduced so that side effects can be also restricted under device operation. By applying SCCO2 fluid, more oxygen ions will be introduced into the ITO electrode and thus the participation of net oxygen ions in the RRAM redox reaction will increase. Fourier transform spectroscopy and X-ray photoelectron spectroscopy were used to confirm hydride oxidation on ITO electrode. Combined with the current fitting results, we proposed a reaction model to explain the improvement of resistive switching in RRAM by SCCO2 fluids.
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    Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory
    (2015-06-01)
    Lin, Chih-Yang
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Pan, Chih-Hung
    We have previously investigated the automatic current compliance property for indium tin oxide (ITO) resistance random access memory (RRAM). Traditionally, for the purpose of protecting RRAM, it is necessary to set equipment current compliance during the set and forming processes of RRAM devices. ITO RRAM devices, however, have an intrinsic capability to limit their current. This letter examines this ITO RRAM current compliance in depth by applying a varied stop-voltage measurement method, where different negative stop voltages were adopted to manipulate oxygen ions. Combined with material analysis and conduction current fitting, a model was established.