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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Zhang, Rui

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Now showing 1 - 10 of 21
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    Highly anisotropic metasurface: a polarized beam splitter and hologram
    (2014-09-29)
    Zheng, Jun
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    Ye, Zhi-Cheng
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    Sun, Nan-Ling
    ;
    Zhang, Rui
    ;
    Sheng, Zheng-Ming
    Two-dimensional metasurface structures have recently been proposed to reduce the challenges of fabrication of traditional plasmonic metamaterials. However, complex designs and sophisticated fabrication procedures are still required. Here, we present a unique one-dimensional (1-D) metasurface based on bilayered metallic nanowire gratings, which behaves as an ideal polarized beam splitter, producing strong negative reflection for transverse-magnetic (TM) light and efficient reflection for transverse-electric (TE) light. The large anisotropy resulting from this TE-metal-like/TM-dielectric-like feature can be explained by the dispersion curve based on the Bloch theory of periodic metal-insulator-metal waveguides. The results indicate that this photon manipulation mechanism is fundamentally different from those previously proposed for 2-D or 3-D metastructures. Based on this new material platform, a novel form of metasurface holography is proposed and demonstrated, in which an image can only be reconstructed by using a TM light beam. By reducing the metamaterial structures to 1-D, our metasurface beam splitter exhibits the qualities of cost-efficient fabrication, robust performance, and high tunability, in addition to its applicability over a wide range of working wavelengths and incident angles. This development paves a foundation for metasurface structure designs towards practical metamaterial applications.
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    Biocompatible D-A Semiconducting Polymer Nanoparticle with Light-Harvesting Unit for Highly Effective Photoacoustic Imaging Guided Photothermal Therapy
    (2017-04-05)
    Zhang, Jinfeng
    ;
    Yang, Caixia
    ;
    Zhang, Rui
    ;
    Chen, Rui
    ;
    Zhang, Zhenyu
    The development of nanotheranostic agents that integrate diagnosis and therapy for effective personalized precision medicine has obtained tremendous attention in the past few decades. In this report, biocompatible electron donor-acceptor conjugated semiconducting polymer nanoparticles (PPor-PEG NPs) with light-harvesting unit is prepared and developed for highly effective photoacoustic imaging guided photothermal therapy. To the best of our knowledge, it is the first time that the concept of light-harvesting unit is exploited for enhancing the photoacoustic signal and photothermal energy conversion in polymer-based theranostic agent. Combined with additional merits including donor-acceptor pair to favor electron transfer and fluorescence quenching effect after NP formation, the photothermal conversion efficiency of the PPor-PEG NPs is determined to be 62.3%, which is the highest value among reported polymer NPs. Moreover, the as-prepared PPor-PEG NP not only exhibits a remarkable cell-killing ability but also achieves 100% tumor elimination, demonstrating its excellent photothermal therapeutic efficacy. Finally, the as-prepared water-dispersible PPor-PEG NPs show good biocompatibility and biosafety, making them a promising candidate for future clinical applications in cancer theranostics.
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    Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
    (2016-04)
    Tsai, Tsung-Ming
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    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Zhang, Rui
    ;
    Wang, Tong
    DThis letter investigates the double-ended resistive switching characteristics of indium tin oxide (ITO) resistance random access memory (RRAM). Resistive switching can be achieved around both the active TiN electrode and the inert Pt electrode. In addition, complementary resistance switching (CRS) characteristics can be observed without current compliance during dc voltage sweep operations. Electrical measurement data fitting results indicate that the oxygen-rich ITO near top and bottom electrodes works as a double-ended resistive switching layer. Based on the analysis of the current conduction mechanism, we propose a physical model to interpret the CRS behaviors in ITO RRAM devices.
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    Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
    (2015-11-01)
    Chen, Ji
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Pan, Chih-Hung
    In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar I-V characteristics compared with the ITO/Hf:SiO2/TiN control structure RRAM. The nitrogen in the ITO electrode layer, however, works as an oxygen buffer and makes it easier for the redox reaction to occur, leading to improvements in performance, such as concentrated voltages and better endurance.
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    Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid
    (2015-06-01)
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Zhang, Rui
    ;
    Chen, Kai-Huang
    Supercritical carbon dioxide (SCCO2) fluid technology was applied to indium-tin-oxide (ITO) electrode to improve the resistive switching characteristic of silicon oxide RRAM through hydride oxidation for the first time. We found device power consumption can be effectively reduced so that side effects can be also restricted under device operation. By applying SCCO2 fluid, more oxygen ions will be introduced into the ITO electrode and thus the participation of net oxygen ions in the RRAM redox reaction will increase. Fourier transform spectroscopy and X-ray photoelectron spectroscopy were used to confirm hydride oxidation on ITO electrode. Combined with the current fitting results, we proposed a reaction model to explain the improvement of resistive switching in RRAM by SCCO2 fluids.
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    Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory
    (2015-06-01)
    Zhang, Wei
    ;
    Hu, Ying
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Kuan-Chang
    In this letter, a triple-ion redox reaction has been proposed and investigated in GeSO-based resistance random access memory. Continuous multiresistance states can be obtained by applying a series of increasing cutoff voltages in both set and reset processes. Using data retention tests, these multistates in the set and reset processes were confirmed to be stable. The conduction mechanism gradually changed during reset process from space charge limited current to Schottky emission. A triple-ion reaction model has been proposed to reveal the chemical reaction properties in the resistive switching process.
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    Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory
    (2015-06-01)
    Lin, Chih-Yang
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Pan, Chih-Hung
    We have previously investigated the automatic current compliance property for indium tin oxide (ITO) resistance random access memory (RRAM). Traditionally, for the purpose of protecting RRAM, it is necessary to set equipment current compliance during the set and forming processes of RRAM devices. ITO RRAM devices, however, have an intrinsic capability to limit their current. This letter examines this ITO RRAM current compliance in depth by applying a varied stop-voltage measurement method, where different negative stop voltages were adopted to manipulate oxygen ions. Combined with material analysis and conduction current fitting, a model was established.
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    Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
    (2014-06-01)
    Zhang, Rui
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Huang, Syuan-Yong
    In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO2) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.
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    Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
    (2014-01-01)
    Chang, Kuan-Chang
    ;
    Chen, Jung-Hui
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Huang, Syuan-Yong
    We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration-dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. The current conduction mechanism of low resistance state in post-treated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction. Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel-Poole conduction. The phenomena were attributed to the discontinuous metal filament formed by hydration-dehydration reaction in Sn:SiOx thin film through supercritical fluid treatment. Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn:SiOx thin film with supercritical CO2 fluid treatment. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
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    Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
    (2014-02-01)
    Chu, Tian-Jian
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Chang, Kuan-Chang
    ;
    Zhang, Rui
    In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model.