學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 20683

Holographic data storage with a planar-integrated optical write-read head
(2009-01-01)
Soellner, Matthias
;
Vieth, Udo
;
Hsu, Ken Yuh
;
Lin, Shiuan Huei
;
Gruber, Matthias
The construction of a write-once-read-many-type optical write-read-head for volume holographic data storage in disk-based photopolymer storage media is discussed. Its design is based on the photonic integration concept called planar-integrated free-space optics. A proof-of-principle demonstrator was fabricated, it contains a 3mm thick fused silica wafer that carries most passive components for the reference and the signal beam relay in the form of diffractive optical elements, a translucent liquid crystal microdisplay, and the CCD sensor of a webcam. Phenanthrenequinone-doped polymethylmethacrylate was chosen as storage material, a DPSS laser with lambda = 532nm serves as light source. We report about preliminary experiments to determine suitable exposure parameters for holographic write-read operations, and on the use of data matrix codes for the encoding and decoding of information.
Study of the thermal property of copper oxide nanowires
(2009-01-01)
Dee, C. F.
;
Wong, Y. Y.
;
Lim, K. P.
;
Majlis, B. Y.
;
材料科學與工程學系
As a high potential candidate for field-emission emitters, gas sensors, high-critical temperature superconductors, copper oxide NWs have been intensively studied in the synthesized methods, electrical properties and chemical properties. However, there are not many literatures report on the thermal property of them. It is important for one to understand the thermal behavior in order to justify the failure limit of the material especially in nanoscale. In this paper, copper oxide NWs synthesized through direct heating in atmospheric ambient were rapidly annealed in nitrogen ambient at different temperature to check the critical thermal failure point where the free standing copper oxide NWs start to collapse. It was found that copper oxide NWs with diameters around 100 nm started to collapse after 30 minutes of annealing in the nitrogen ambient at 300 degrees C due to the thermal shock incurred by rapid annealing. Increase in temperature will cause the NWs with bigger diameters start to fail. NWs in same diameter range will be able to withstand the temperature up to several hours if no thermal shock is induced. This was happening even when the wires were heated in a higher temperature of 600 degrees C. This result is important for copper oxide NWs when they are incorporated into the other heat sensitive device. The results are important for justifying the failure behavior for devices based on copper oxide NWs.
Research of the chromaticity coordinates and color spectrum calibration using tristimulus sensors and eigenspectrum method
(2009-01-01)
Ou-Yang, Mang
;
Huang, Ting-Wei
;
Hsieh, Yao-Fang
;
Kuob, Yi-Ting
;
應用藝術研究所
The purpose of color measuring instrument is judging the color information by scientific method, which may instead of the human's eyes. Generally, the instruments of color measuring have two kinds, spectrophotometer and color meter. The former measures spectrum by usage of prism or grating to separate the light, this could achieve high accuracy but with a higher price. The latter obtains tristimulus from color filter; however there is no spectrum information with it. This article establishes a color measuring system and uses eigenspectrum method to correct the average inaccuracy. The measuring system includes tristimulus sensors which were made by color filter, and Xenon lamp as light source. The advantage of this measuring system is the higher accuracy and the lower cost. The eigenspectrum method can correct the average inaccuracy in less eigenvector, which can save the time. This method used singular value deposition to obtain basis function of spectrum set, which can be obtained by measuring. Because the range of the spectrum set was 380nm to 780nm, the eigenvector per nanometer from 380nm to 780nm can be obtained. In general, the color spectrum can be obtained with less eigenvector. This article establishes a color measuring system, which has three sensors and uses Xenon lamp as light source, to acquire the color spectral reflectance. This article also uses the eigenspectrum methods to correct the average color difference in L*a*b* color space, which from 31.2398 down to 4.8401, and reconstructs the spectrum information.
A high-speed 850-nm optical receiver by integrating Si photodiode and CMOS IC
(2008-01-01)
Hsin, Y. M.
;
Huang, W. K.
;
Liu, Y. C.
;
Yan, B. E.
;
Chen, W. Z.
In this work, three approaches are proposed to implement high-speed 850-nm optical receivers fully in standard bulk 0.18 pm silicon (Si) CMOS technology. In the first approach, the lateral p-i-n photodiode (PD) with designed block well to limit the photocarriers being generated from the laterally depleted regions is integrated in optical receiver. The receiver consists of TIA, LA, offset-cancellation-network and buffer to provide a conversion gain of 110 dB Omega and data rate of 2.5 Gbps operation. In the second receiver, the spatially modulated PD (SMPD) with -3 dB bandwidth of 590 MHz is integrated in optical receiver with the extra adaptive equalizer and demonstrates a data rate of 3.125 Gbps. Finally, the proposed novel structure of PD eliminates the slow diffusion photocarriers by using body contact design to create a new current path under the PD. A bandwidth of 2.8 GHz with 100 % improvement in PD is obtained. The eye diagrams of PD with cable connected amplifiers at 2.5 Gbps, 4 Gbps and 5 Gbps are demonstrated. Furthermore, the optical receiver's optical-electrical (O-E) conversion bandwidth is also increased from 3.6 GHz to 4.3 GHz. To our knowledge, these are the highest O-E conversion bandwidth of the PD and optical receiver ever reported by using the standard bulk 0.18 mu m Si CMOS technology.
Chaotic passive micromixers with microstructures placed on the top and bottom floors of channel
(2008-01-01)
Chen, J. J.
;
Lai, Y. R.
;
Lin, J. D.
;
機械工程學系
;
Department of Mechanical Engineering
The objective of this study is to present chaotic micromixers in which a series of microstructures are placed on the top and bottom floors of channels. Passive micromixers fabricated by MEMS technologies with crosswise grooves and ridges are considered. Numerical simulations using the commercial software CFD-ACE(U) are employed to predict the effects of various patterns of microstructures on mixing efficiency with the range of Reynolds number from 0.05 to 50. The influences of non-dimensional parameters such as the Reynolds number as well as the geometrical parameters on the mixing performance are presented in terms of the mixing index. Micromixers which are made of PDMS are used to investigate the mixing characteristics influenced by the different kinds of microstructures. A significant amount of stirring resulting from chaotic mixing can be seen due to the fluids flowing through the crosswise ridges embedded on the top and bottom floors of channels. While Re is greater than 1, the mixing index of the micromixer with crosswise ridges starts to increase as Re increases. This means that the flow field in this micromixer results in efficient chaotic mixing. Simulation results are presented to compare with the experimental data, and a very good agreement can be achieved. Finally, various numbers of the crosswise ridges with the same orientation in one cycle of the channels are investigated to present to the mixing performance in the microchannels. An optimal design can be found in our works.
Resonant-enhanced dipolar interaction between THz-photons and confined acoustic phonons in nanostructures
(2008-01-01)
Liu, Tzu-Ming
;
Lu, Ja-Yu
;
Kuo, Chung-Chiu
;
Yang, Meng-Ju
;
Lai, Chih-Wei
By using a frequency-controlled narrow band THz source, a Fourier Transform Infrared (FTIR) spectroscopy system, and a frequency-controlled terahertz (THz) emitter, for the first time, we studied the THz photon absorption related to the THz confined acoustic vibrations in semiconductor nanocrystals. Through a specific charge separation in the CdSe/CdTe type-II nanocrystals and a piezoelectric coupling in the wurtzite CdSe nanocrystals, the THz photons can be resonantly coupled with (l=1) dipolar modes and the (l=0) breathing modes, respectively. Our results provide new mechanisms for low dimensional systems to convert a THz photon into a phonon of the same frequency.
Establish a six-primary color display without pixel-distortion and brightness loss
(2008-01-01)
Hsieh, Yao-Fang
;
Chuang, Ming-Chuen
;
Ou-Yang, Mang
;
Huang, Shih-Wei
;
Li, Jia Hao
Recently, color reproduction stages are developed greatly, such as liquid-crystal displays, LCD TV, LCD projectors, DLP projectors, and etc. Wide-color-gamut displays are distinguishing feature of many display manufacturers. Many researches about multi-primary color displays are proposed, but there are still some problems which are not solved. This study proposed a novel multi-primary projection display system using two projectors. One of the two projectors is modified by changing two dichroic mirrors inside. The modified projector is combined with the other to a new six-primary color display. This study applies equal-luminance boundary theorem to construct gamut volume and evaluates the merit between gamut volume and brightness. By this method, the cut-off wavelength of dichroic mirrors can be found out. In the past, to align the images of the two projectors is pre-distorted to compensate the trapezoidal distortion. This study proposes to eliminate trapezoidal distortion by using the offset of the projector. This study directly changes dichroic mirrors to maintain the brightness and contrast, and solves lower brightness and contrast resulted from adding filters before. Additionally, this study uses a reflection mirror to twist projection path and also constructs a stage to align projection images more accurately.
Abnormal PL spectrum in InGaN MQW surface emitting cavity
(2008-01-01)
Chu, J. T.
;
Cheng, Y. -J.
;
Kuo, H. C.
;
Lu, T. C.
;
Wang, S. C.
We report the observation of an abnormal photoluminescent (PL) spectrum from a HeCd laser pumped InGaN multiple quantum well (MQW) vertical cavity. The device is fabricated using standard MOCVD deposition on a (0001)-oriented sapphire substrate. The layer structures are: 10nm nucleation layer, a 4um bulk GaN layer, InGaN MQWs, and a final 200nm GaN cap layer. The InGaN MQWs consist of 10 pairs of 5 nm GaN barrier and 3 run In0.1Ga0.9N well. The peak emission of the as-grown MQWs sample was similar to 420nm. A dielectric distributed Bragg reflectors (DBR) were then coated on the top layer, followed by a laser lift off from sapphire substrate, and subsequently another DBR coated on the bulk GaN bottom surface. The cavity has a quality factor of similar to 520 from 400-490nm. The device was pumped by a focused CW HeCd laser from the bulk GaN side. When the laser is focused onto the InGaN MQWs, a photoluminescent spectrum centered at the designed MOW wavelength was observed as expected. However, when the focused position was moved toward the bulk GaN region, an additional abnormal PL peak around 460nm was observed. This is far outside the designed MQW wavelength.
Self-seeding injection of anti-reflection coated FP laser amplifier based transmitters for wavelength division multiplexing PON
(2007-01-01)
Lin, Gong-Cheng
;
Ko, Sun-Chien
;
Huang, Yin-Hsun
;
Wang, Hai-Lin
;
Liao, Yu-Sheng
We experimentally demonstrate a directly modulated 1% AR-FPLA based ONU under side-mode injection-locking for 1.25Gbits/s DWDM-PON application. With side-mode injection of this device, the characterizes of 34-channel detuning capacity under self seeding and its corresponding to a wavelength locking range of 30 nm is a potential candidate to achieve the cost effective and high capability 1.25 Gbits/s DWDM-PON systems. The effects of the front-facet reflectivity in the AR-FPLA on injection locking range, spontaneous emission, and Q-factor are interpreted from our results. A BER of < 10(-12) is obtained for the nearest 17 channels and a 10(-10) error rate can be achieved for all of the 34 injection-locked channels with SMSR >35dB, providing a negative power penalty of -0.7 dB.
A study on the optomechanical tolerance model for lens assembly
(2007-01-01)
Cheng, Chen-Chin
;
Lin, Tsung-Yin
;
Chen, Ren-Haw
;
機械工程學系
;
Department of Mechanical Engineering
Optomechanics is defined as the science or engineering of maintaining the proper shapes and positions of the functional elements in an optical system. At the optomechanical interface, manufacturing tolerances affect the shape and position of the surface in a lens system. Even very small variations will cause extra aberrations which degrade the optical performance of a lens system. The traditional approach to the optomechanical tolerance design is a top-down process. The optical designers typically designate the critical to quality parameters, such as tolerances of tilts, decenters, and locations of optical elements. A significant drawback of this top-down process is that the tolerances determined by optical designers do not take the real manufacturing and assembly process into consideration. As a result, some tolerances are too tight for the manufacturing, and the yield rate of the production is difficult to improve. The objective of this study is to develop a surface based optomechanical tolerance model that calculates the variation of the critical to quality parameters for a lens system. The distribution of these parameters can be treated as inputs to the optical design. Therefore, the optical performance will be predictable than the top-down approach, and the manufacturability of the optical system can be improved.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results