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Synthesis and luminescent properties of polymer-silica multilayer-encapsulated perovskite quantum dots for optoelectronics
(1970-01-01)
Liu, Shuang-De
;
Chen, Teng-Ming
;
應用化學系
;
Department of Applied Chemistry
Hydrophobic all-inorganic perovskite quantum dots (IPQDs) CsPbX3 (X = Cl, Br, and I) were synthesized using conventional solution methods. IPQDs are potential materials for lasers, solar cells, and displays because of their narrow full width at half-maximum, optically tunable wavelength, and great photoluminescence quantum yield. Their shortcomings are structurally unstable and moisture sensitive. To overcome the poor stability, we have developed a chemical modification to form GQD + PMAO@SiO2 that enhances their photoluminescence quantum yield (from 60 to similar to 90%), thermal stability (from 60 to similar to 90 degrees C), and photochemical stability. The combination of the green-emitting GQD + PMAO@SiO2 and red-emitting RQD + PMAO with a 450 nm blue InGaN-based LED chip was used to fabricate a white light emitting diode with the correlated color temperature (CCT) value of 6,943 K and Commission Internationale del'Eclairage of (0.312, 0.290).
Synthesis, photoluminescence, and electroluminescence characterization of double tetraphenylethene-tethered BODIPY luminogens
(1970-01-01)
Yang, Chiun-Jen
;
Lee, Jian Haur
;
Chen, Chin-Ti
;
應用化學系
;
Department of Applied Chemistry
Three double tetraphenylethene (TPE)-tethered 4-difluoro-4-bora-3a,4a-diaza-s-indance (BODIPY) fluorophores, 35TPEBODP, 88TPEBODP, and 26TPEBODP, have been synthesized and characterized. The green 35TPEBODP with deep red fluorescence shows serious thermal decomposition in the purification process of sublimation, which prohibits its test for an organic light-emitting diode (OLED) fabricated by the vacuum-thermal evaporation process. The tethered TPE is attached to BODIPY at three different positions, resulting in different photoluminescence (emission wavelength and quantum yield) and electroluminescence (EL). Different from TPE-tethered BODIPY fluorophores reported in literature, none of the BODIPY fluorophores studied here exhibits aggregation-induced emission (AIE), aggregation-induced enhanced emission (AIEE), or twisted intramolecular charge transfer (TICT) characteristics. Although solution (10(-5) M THF) photoluminescence quantum yields (phi s) are relatively high at 78%, 68%, and 86% for 35TPEBODP, 88TPEBODP, and 26TPEBODP, respectively, which are all higher than 41% of PhBODP (a non-TPE-tethered BODIPY), the phi is significantly decreased to 1-6% in 5 wt% dopant polystyrene thin film or as a solid powder, except for 13% of 26TPEBODP. Therefore, due to the low phi of dopant thin film or solid powder, either dopant or nondopant OLEDs exhibit inferior external quantum efficiency (EQE) and intensity of EL. The best OLED in this study is the 26TPEBODP device, and its EQE reaches 1.3%, and the highest EL intensity is approximately 1,600 cd/m(2).
Abnormal PL spectrum in InGaN MQW surface emitting cavity
(2008-01-01)
Chu, J. T.
;
Cheng, Y. -J.
;
Kuo, H. C.
;
Lu, T. C.
;
Wang, S. C.
We report the observation of an abnormal photoluminescent (PL) spectrum from a HeCd laser pumped InGaN multiple quantum well (MQW) vertical cavity. The device is fabricated using standard MOCVD deposition on a (0001)-oriented sapphire substrate. The layer structures are: 10nm nucleation layer, a 4um bulk GaN layer, InGaN MQWs, and a final 200nm GaN cap layer. The InGaN MQWs consist of 10 pairs of 5 nm GaN barrier and 3 run In0.1Ga0.9N well. The peak emission of the as-grown MQWs sample was similar to 420nm. A dielectric distributed Bragg reflectors (DBR) were then coated on the top layer, followed by a laser lift off from sapphire substrate, and subsequently another DBR coated on the bulk GaN bottom surface. The cavity has a quality factor of similar to 520 from 400-490nm. The device was pumped by a focused CW HeCd laser from the bulk GaN side. When the laser is focused onto the InGaN MQWs, a photoluminescent spectrum centered at the designed MOW wavelength was observed as expected. However, when the focused position was moved toward the bulk GaN region, an additional abnormal PL peak around 460nm was observed. This is far outside the designed MQW wavelength.
Effects of substrate temperature on properties of Alq3 amorphous layers prepared by vacuum deposition
(2006-01-01)
Chiu, K. C.
;
Jian, Z. A.
;
Luo, Y. Z.
;
Chung, J. M.
;
Tang, S. J.
In this report, various organic Alq3 amorphous layers are prepared by vacuum deposition at different substrate temperatures T-sub (from 30 to 180 degrees C). The surface morphology, structural information, electrical and optical properties of these as-deposited layers are investigated by atomic force microscopy, X-ray diffraction, J-E curves, and photoluminescence studies, respectively. Furthermore, a temperature dependence of dark electrical conductivity sigma(T) deduced from J-E curves of these organic amorphous layers is presented. Finally, effects from T-sub on the physical properties of these organic Alq3 amorphous layers are discussed and a model based on a thermal interconversion between Alq3 isomers is proposed to explain these experimental results.
Single-exciton energy shell structure in InAs/GaAs quantum dots
(2008-12-01)
Awirothananon, S.
;
Raymond, S.
;
Studenikin, S.
;
Vachon, M.
;
Render, W.
The energy shell structure of a single exciton confined in a self-assembled quantum dot (QD), including excited states, is studied in a regime where the direct Coulomb attraction energy is comparable to the kinetic energy of the carriers. This is achieved via magnetophotoluminescence excitation spectroscopy experiments, where a magnetic field applied perpendicular to the plane of the QD is used to reveal the angular-momentum content of energy shells. The absorption spectrum of the QDs is modeled, and comparison with experiment allows us to relate the observed transitions to interband QD bound-state transitions. The blueshift of the absorption peaks compared to the emission peaks is then interpreted in terms of many-body interactions, and we show that for a highly symmetric situation, the observed energy difference gives a direct measurement of the extra exchange energy gained upon addition of an extra exciton in the QD.
Recombination lifetimes in InN films studied by time-resolved excitation-correlation spectroscopy
(2009-11-01)
Liu, Horng-Chang
;
Hsu, Chia-He
;
Chou, Wu-Ching
;
Chen, Wei-Kuo
;
Chang, Wen-Hao
Recombination dynamics in degenerate InN were investigated by means of time-resolved excitation-correlation spectroscopy. The photoluminescence decay times are determined beyond the spectral response and temporal resolution limits of conventional photon-counting detectors. Spectral and temperature dependence of decay times reveal the effects of hole localizations on the recombination mechanisms. At low temperatures, the radiative lifetime tau(r) is insensitive to temperature and significantly longer than that predicted for the radiative band-to-band recombination, indicative of a transition dominated by the free-to-bound recombination without k conservation. Above a certain temperature determined by the electron concentration, we find tau(r)similar to T(3/2), as expected for the band-to-band transition when the k-selection rule holds. We determine a lower limit for the bimolecular recombination coefficient B in InN at 300 K as 5.6x10(-11) cm(3)/s.
Time-resolved photoluminescence of isoelectronic traps in ZnSe1-xTex semiconductor alloys
(2008-12-15)
Lin, Y. C.
;
Chou, W. C.
;
Fan, W. C.
;
Ku, J. T.
;
Ke, F. K.
Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-xTex. As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.
Observing enhanced phosphorescence and electroluminescence from triplet emitter by quantum dot doping
(2005-01-01)
Laskar, IR
;
Liu, HW
;
Huang, CP
;
Cheng, JA
;
Chen, TM
Luminescent CdSe/ZnS core-shell-type quantum dots (QDs) were synthesized by chemical colloidal methods. The photoluminescence (PL) intensity of a triplet emitter [bis(4-trifluoromethyl)-2-phenylbenzothiazolatoacetylacetonate-iridium(III) (Ir complex 1) and bis(4-methyl)-2-phenylbenzothiazolatoacetylacetonate-iridium(III) (Ir-complex 2)] was dramatically enhanced when bluish-green emitting CdSe/ZnS QDs were incorporated into these compounds. Experimental results indicate that the emissive region of QDs substantially overlaps with the low-energy absorption bands of Ir-complexes, indicating that the photons were absorbed by both the QDs and the Ir-complexes and that the energy absorbed by the QDs was transferred efficiently to the Ir-complex triplet emitter, resulting in the observed enhancement of PL intensity. A slow quenching of QDs emission was observed in a prepared set of solutions with gradual increasing of Ir complex concentration at a fixed QDs concentration in thin film PMMA matrix, which supports the energy transfer from Ir complex to QDs. In the fabricated double-layer electroluminescent (EL) devices, the emitting layer contained either only Ir-complex or a mixture of Ir-complex and CdSe/ZnS QDs with a specific molar ratio [Ir-complex/QDs = 1/0 (D-I); 1/0.5 (D-II),..., 1/10 (D-V)]. The EL intensity and the luminance efficiency for D-II were higher (luminescence yield = 19.3cd A(-1)) than those of the other devices. The PL and EL enhancement of the triplet emitter were also strongly supported by using ZnSe QDs rather than CdSe/ZnS QDs.
Luminescent Properties and Energy Transfer of Green-Emitting Ca3Y2(Si3O9)(2):Ce3+,Tb3+ Phosphor
(2009-01-01)
Chiu, Yi-Chen
;
Liu, Wei-Ren
;
Yeh, Yao-Tsung
;
Jang, Shyue-Ming
;
Chen, Teng-Ming
Green-emitting phosphors of Ca3Y2(Si3O9)(2):Ce3+,Tb3+ have been synthesized by solid-state reaction. The luminescence properties were characterized by photoluminescence (PL) and photoluminescence excitation spectra, reflection spectra, and a detection system using an integrating sphere equipped with a spectrofluorometer. With Ce3+ co-doping as a sensitizer, the PL intensity of Ca3Y2(Si3O9)(2):Ce3+,Tb3+ was found to increase dramatically by a factor of 5.8. For comparison, the emission intensity of composition-optimized Ca3Y2(Si3O9)(2):Ce3+,Tb3+ is 126% of green commodity, ZnS:Cu,Al. The quantum efficiency of Ca3Y2(Si3O9)(2):Ce3+,Tb3+ is as high as 77% compared to ZnS:Cu,Al (53%). The energy transfer from Ce3+ to Tb3+ is also of resonant type via a dipole-dipole mechanism with the energy-transfer critical distance of 6.78 A degrees. By utilizing the principle of energy transfer and appropriate tuning of activator contents, we are currently evaluating the potential application of Ca3Y2(Si3O9)(2):Ce3+,Tb3+ as a highly efficient UV-convertible phosphor.
Spectroscopy of a single Sb2Se3 nanorod
(2009-08-01)
Sun, Kien Wen
;
Yang, Cheng-Hang
;
Ko, Ting-Yu
;
Chang, Hao-Wei
;
Liu, Chen-Wei
In this paper, we present solvothermal methods to chemically synthesize Sb2Se3 nanorods using dialkyl diselenophosphate (dsep) complexes of antimony. Energy-dispersive X-ray analysis shows the products are phase pure. We have also studied the Raman and photoluminescence spectroscopy of a single Sb2Se3 nanorod with an average size of 60 nm in diameter and a length less than 1 mu m. Techniques have been devised to immobilize and allocate a single nano-object on an electron beam (E-beam) patterned smart substrate with metallic coordination markers. This also overcomes the limitation of spatial resolution of conventional Optical techniques (similar to 1 mu m) to perform optical spectroscopy on an individual nano-object less than 100 nm in size. Raman spectroscopy reveals that Sb2Se3 nanorods synthesized at a lower temperature contain a small amount of Sb2Se3. The broad linewidth observed in luminescence spectra from a single rod is attributed to the increasing number of surface defects, impurities, and dangle bonds attached on the surface as the nanoparticle size reduced to nanometer scale.

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