<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2012 - 20182

Settings

🏛️國立陽明交通大學機構典藏

Has files: NoSubject: search.filters.subject.CIGS

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item type:Item,
    Effect of Selenization Processes on CIGS Solar Cell Performance
    (2018-07-01)
    Wu, C. H.
    ;
    Wu, P. W.
    ;
    Chen, J. H.
    ;
    Kao, J. Y.
    ;
    Hsu, C. Y.
    Cu(In, Ga)Se-2 (CIGS) films were fabricated by a two-step process method using sputtering from Cu0.7Ga0.3 and In targets. The metallic precursor structures of In/CuGa/In were prepared, and CuGa film was adjusted to the thicknesses of 150, 200, 250 and 300 nm, in order to optimize the CIGS film. After selenization, three independent CIGS (112), CIGS (220/204) and CIGS (312/116) began to crystallize at similar to 280 degrees C and phase peaks continued growing until 560 degrees C. Experimental results showed that with a single stage selenization method, the excessive stoichiometry of the CIGS films was obtained. Using three sequential stages for the selenization process, with a annealing time of 20 min, the stoichiometry of the CIGS absorbers with the Cu/(In + Ga) and Ga/(In + Ga) showed atomic ratios of 0.94 and 0.34, respectively. The intensity of the (112) XRD diffraction peak became stronger, indicating an improvement in the crystallinity. Raman spectra of CIGS absorbers showed a main peak (174 cm(-1)) and two weak signals (212 and 231 cm(-1)). TEM image for electron diffraction pattern showed that the grains were randomly oriented. CIGS solar cell device prepared with a proper selenization, a maximum efficiency of 12.45% was obtained.
  • Thumbnail Image
    Item type:Item,
    Characterization of large area Cu(In,Ga)Se-2 nanotip arrays via photoluminescence
    (2012)
    Liao, Yu-Kuang
    ;
    Lin, Woei-Tyng
    ;
    Hsieh, Dan-Hua
    ;
    Kuo, Shou-Yi
    ;
    Lai, Fang-I
    In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se-2 nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar+ milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor.