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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    快速與光電元件及毫微米結構之特性與可靠性研究
    (1993)
    施敏 
    ;
    交通大學電子研究所 
    由於本研究�已成功地成長出高品質的GaInP/ GaAs磊晶層,對於AlGaInP/GaAs的異質結構亦有深入的 了解,另外,也研製出閘極長度為1um的HEMT結構及 GaAs/GaInP的DH雷射二極體,且得到相當不錯的特性.因此,本計畫將持續以前的研究工作,將對各種高 速及光電元件(如HEMT, HBT, 和LD)探討其可靠性的問 題,同時配合電腦模擬計算以期能改善元件的各 種操作特性,如功率輸出大小,雜訊,及溫度效應等 性質.同時也將利用有機金屬化學汽相磊晶技術( MOCVD),電子束微影技術(Electron Beam Lithography)及活 性離子蝕刻技術(RIE)來研究量子效應(Quantum Effects )結構,並探討在次微米製程上遭遇到的各種問題. 本計畫主題包含下列五項:ぇ:選擇性區域磊晶成長(Selective Area Growth).え:活性離子蝕刻技術及傳統溶液蝕刻技術(Wet Etching)對次微米結構之影響.ぉ:量子效應結構之研究及相關效應之測量;包括: 量子線(Quantum Wire),量子盒(Quantum Box),及量子井線( Quantum Well Wire).�:超小面積之歐姆接觸及其在量子效應元件之 應用. 
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    2D Numerical Simulation for InGaP/GaAs HBT Safe Operating Area
    (2014-01-01)
    Lin, Bo-Rong
    ;
    Tao, Nick G. M.
    ;
    Lee, Chien-Ping
    ;
    Henderson, Tim
    ;
    Lin, Barry J. F.
    The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good agreement with analytical modeling and experimental results. The simulation not only gives us insight to the detailed failure mechanisms but also provides guidance for the design of devices with better ruggedness and improved SOA performances.
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    Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation
    (2015-06-01)
    Tao, Nick G. M.
    ;
    Lin, Bo-Rong
    ;
    Lee, Chien-Ping
    ;
    Henderson, Tim
    ;
    Lin, Barry J. F.
    The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors has been studied using two-dimensional Technology Computer-Aided Design (TCAD) tool. Comprehensive physical models, including hydrodynamic transport-based impact ionization and self-heating models were implemented. The simulations for two DC modes (constant I-b and V-b modes) captured all the SOA features observed in measurements and some failure mechanisms were revealed for the first time by TCAD simulations. The simulated results are also in agreement with analytical modeling. The simulation not only gives us insight to the detailed failure mechanisms, but also provides guidance for the design of devices with better ruggedness and improved SOA performances.
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    氫效應在異質接面電晶體所引起的穩定性及可靠性問題
    (2000)
    李建平
    ;
    LEE CHIEN-PING
    ;
    交通大學電子工程系
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    異質接面雙載子電晶體結構之探討及其在高速無線電數據機之應用
    (1996)
    張俊彥
    ;
    CHANG CHUN-YEN
    ;
    國立交通大學電子工程學系
    近年來,砷化鎵元件廣泛地使用在衛星及個 人通訊上.即使是在高頻範圍下工作,它們仍可 保有低雜訊及高輸出功率效率等優點.此計畫 之目的在於開發砷化鎵為基材的異質接面雙載 子電晶體 (HBT) 相關技術並研究其物理特性.進 而將之運用在高速無線電數據之收發系統上. 由於傳統異質接面雙載子電晶體結構上所具有 之位能突峰使得射一基極接面的啟動電壓與基 集極面的啟動地壓不相同,此項缺點限制了傳 統異質接面雙載子電晶體的特性.因此,一種異 質射極雙載子電晶體(HEBT)和穿隧射極雙載子電 晶體 (TEBT) 被使用去克服此項問題.在此計劃中 運用.delta.- 摻雜技術去嘗試減少位能突峰的大 小.藉由.delta.摻雜,可使得傳統HBT結構依舊能維持異質接面的優點並能減低位能突峰的影響, 且可增加價帶不連續之大小,以抑制電洞由基 極流入射極的機會.除了直流特性外,高頻特性 也是此計劃另一課題.因為.delta.- 摻雜技術同 時也會增加射基極間電容之大小,故.delta.-摻雜 之濃度及位置必須審慎設計以求最佳化之特性 .此計劃最後將運用前述HEBT,TEBT 及.delta.-摻雜 改良後之HBT 元件,以混成方式製作一收發系統.
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    A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
    (2005-06-01)
    Wu, TH
    ;
    Meng, CC
    ;
    Wu, TH
    ;
    Huang, GW
    ;
    電信工程研究所
    This paper demonstrates a small compact 5.7 GHz upconversion Gilbert micromixer using 0.35 mu m SiGe HBT technology. A micromixer has a broadband matched single-ended input port. A passive LC current combiner is used to convert micromixer differential output into a single-ended output and doubles the output current for single-ended-input and single-ended-output applications. Thus, a truly balanced operation of a Gilbert upconversion mixer with a single-ended input and a single-ended output is achieved in this paper. The fully matched upconversion micromixer has conversion gain of -4 dB, OP(1 dB) of -9 dBm and OIP(3) of 4 dBm when input IF=0.3 GHz. LO=5.4 GHz and output RF=5.7 GHz. The IF input return loss is better than IS dB for frequencies up to 20 GHz while RF output return loss is 25 dB at 5.7 GHz. The supply voltage is 3.3 V and the current consumption is 4.6 mA. The die size is 0.9 X 0.9 mm(2) with 3 integrated on-chip inductors.
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    High frequency property optimization of heterojunction bipolar transistors using geometric programming
    (2007)
    Li, Yiming
    ;
    Chen, Ying-Chieh
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    In this work, we theoretically optimize the high frequency property of silicon-germanium heterojunction bipolar transistors (HBTs) using a geometry programming (GP) technique. It is known that the base transit time of semiconductor devices potentially is a function of doping profile, device geometry and materials which significantly dominate the high frequency properly of HBTs. To maximize the cut-off frequency of HBTs, the subject is formulated as a GP optimization problem by physically considering the base transit time as an object function. The GP model is solved numerically so that the cutoff frequency of HBT could be optimized for specified upper and lower bounds of the base doping concentration, and certain Ge composition. This work also shows that for 13% Ge profile, the cut-off frequency may reach a maximal value.