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    Process Integration and Interconnection Design of Passive-Matrix LED Micro-Displays With 256 Pixel-Per-Inch Resolution
    (2020-01-01)
    Yuan, Shuo-Huang
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    Yan, Shih-Siang
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    Yao, Yu-Shiuan
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    Wu, Chung-Cheng
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    Horng, Ray-Hua
    A 0.28-inch InGaN-based blue micro-LED display with 256 pixel-per-inch resolution and a pitch of $100 mu m was successfully fabricated in this study. A thick Ti/Al/Ti/Au interconnection metal was deposited on the n-type gallium nitride (n-GaN) region to reduce the interconnection resistance. The micro-LED array with interconnection metal exhibits better electrical property consistency as compared with that of the traditional one. The output power, forward voltage, and external quantum efficiency of micro-LED, which measured under 1-mA current injection with the full lighting mode, are 0.8 mW, 3.0 V, and 10%, respectively. This technique has the potential to integrate InGaN-based LEDs with quantum dots for full-color applications.
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    Low resistive InGaN film grown by metalorganic chemical vapor deposition
    (2020-01-01)
    Shrestha, Niraj Man
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    Chauhan, Prerna
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    Wong, Yuen-Yee
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    Li, Yiming
    ;
    Samukawa, Seiji
    Indium gallium nitride (InGaN) samples were grown on sapphire substrate with low temperature GaN buffer by metalorganic chemical vapor deposition (MOCVD) under varying growth conditions, such as temperature, pressure and ammonia flow. Although high indium composition is considered as indispensable parameter for sheet carrier concentration (n(s)) and low sheet resistance (R-s), our outcomes disclose that higher indium composition in InGaN film doesn't always have high n(s) and low R-s. Acceptor nature of carbon related defects, a major trapping sites for electrons, plays a crucial role to limit the carrier concentrations in the InGaN specially grown at low pressure, low temperature and low ammonia flow. Furthermore, study of metal contacts deposited on the grown samples by transmission line method (TLM) shows that carrier concentration is the most important factor to obtain low contact resistance. The measured contact resistance for the sample with 4.5x 10(16) cm(2) carrier concentration is 0.13 Omm which is among the lowest contact resistance for GaN based materials grown by MOCVD. This proves that the use of InGaN in source and drain contact region can surpassingly reduce contact resistance and significantly improve device performance of AlGaN/GaN device.
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    Analysis of Quality Factor Enhancement in the Monolithic InGaN/GaN Nanorod Array
    (2019-04-01)
    Huang, Chia-Yen
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    Tai, Tzu-Ying
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    Hong, Kuo-Bin
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    Kuo, Hao-Chung
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    Lu, Tien-Chang
    Whispering gallery mode (WGM) lasers and resonators are key building blocks for photonic integrated circuits. The quality factor and resonant wavelength are strong functions of the cavity size. Nanoscale WGM cavities suffer from a low-quality factor due to prominent scattering loss. However, the quality factor could be enhanced by forming an optically-coupled rod array or photonic molecules. Through simulations, we revealed how rod-to-rod optical coupling influenced the threshold pumping level and dominant mode selection, where the trend showed good agreement with the experimental observation. According to the simulation, the quality factor could be enhanced by up to eight times by forming a six-rod photonic molecule. The quality factor and effective mode were both superior to the single rods with the same wafer device footprint.
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    Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction
    (2019-04-01)
    Shen, Chih-Chiang
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    Lu, Yun-Ting
    ;
    Yeh, Yen-Wei
    ;
    Chen, Cheng-Yuan
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    Chen, Yu-Tzu
    In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J(th)) from 12 to 8.5 kA/cm(2), and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 degrees C) and high operation current (1.5 x J(th)) test for over 500 h.
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    Mode-Hopping Phenomena in the InGaN-Based Core-Shell Nanorod Array Collective Lasing
    (2018-07-01)
    Huang, Chia-Yen
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    Tai, Tzu-Ying
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    Lin, Jing-Jie
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    Chang, Tsu-Chi
    ;
    Liu, Che-Yu
    A two-dimensional monolithic InGaN-based core-shell it array was excited under a varying temperature. We observed an abrupt dominant mode hopping from 3.29 to 141 eV in the collective lasing as the temperature decreased from T = 240 to 225 K, Photoluminescence under a near-threshold pumping density revealed the splitting of spontaneous emission. between the core and the shell with a decreasing temperature. The bandgap evolution of GaN and InGaN showed opposite trends due to the interaction of temperature effects and bandgap renormalization effects. Theoretical simulation revealed the differences of gain spectra evolution between room lire and to temperature due to the difference the carrier dynamics, In the optically coupled nanorod array, the dominant lasing;mode was not only determined by it structure, but also strongly influenced by external operating conditions. Rattier than singular microcavity lasers the coupled nanorod array demonstrated a broader parameter space for on-chip wavelength manipulation.
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    Discussion on electrical characteristics of i-In0.13Ga0.87N p-i-n photovoltaics by using a single/multi-antireflection layer
    (2010-07-01)
    Lee, Han Cheng
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    Su, Yan Kuin
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    Chuang, Wen Kuei
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    Lin, Jia Ching
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    Huang, Kuo Chin
    Active layers of i-In0.13Ga0.87N p-i-n photovoltaics (PVs) with a single antireflection layer (SARL) and a multi-antireflection layer (MARL), respectively, were fabricated. Reflectance simulation results show that the PVs with a SARL or a MARL have performance superior to those without an antireflection layer (ARL). In particular, the surface reflectance of PVs with a MARL was reduced to 6% at wavelengths between 330 and 500 nm. The ARL reduced the reflectance and recombination current, as well as boosting shunt resistance without increasing series resistance. Compared with PVs without an ARL, the open-circuit voltage and fill factor of PVs with a MARL increased by 100% and 54.5%, respectively. The ideal factor was improved by 19.4% and 31.9% in devices with a SARL (SiO2) and a MARL (Ta2O5/SiO2), respectively. (C) 2010 Elsevier B.V. All rights reserved.
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    Efficiency Enhancement in InGaN Photovoltaic Cells With Inverted Textured Surface
    (2017-08-15)
    Wu, Ming-Hsien
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    Horng, Ray-Hua
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    Liao, Wen-Yih
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    Chang, Sheng-Po
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    Chang, Shoou-Jinn
    We report on the improvement of conversion efficiency of InGaN photovoltaic (PV) cells with inverted textured surface (ITS). InGaN PV cells with ITS showed short-circuit current density and conversion efficiency of 0.63 mA/cm(2) and 1.01%, which are 68.17% and 73.33% higher than the characteristics of conventional InGaN PV cells, respectively. The improvement can be attributed to the reduction of both the shading effect of the electrode contact pad and surface reflection of the incident irradiation under one-sun air-mass 1.5-G illumination (100 mW/cm(2)).
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    Collective Lasing Behavior of Monolithic GaN-InGaN Core-Shell Nanorod Lattice under Room Temperature
    (2017-10-01)
    Huang, Chia-Yen
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    Lin, Jing-Jie
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    Chang, Tsu-Chi
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    Liu, Che-Yu
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    Tai, Tzu-Ying
    We demonstrated a monolithic GaN-InGaN core-shell nanorod lattice lasing under room temperature. The threshold pumping density was as low as 140 kW/cm(2) with a quality factor as high as 1940. The narrow mode spacing between lasing peaks suggested a strong coupling between adjacent whisper gallery modes (WGM), which was confirmed with the far field patterns. Excitation area dependent photoluminescence revealed that the long-wavelength lasing modes dominated the collective lasing behavior under a large excitation area. The excitation-area-dependent lasing behavior resulted from the prominent optical coupling among rods. According to the optical mode simulations and truncated-rod experiments, we confirmed that the fine-splitting of lasing peaks originated from the coupled supermodes existing in the periodic nanorod lattices. With wavelength-tunable active materials and a wafer-level scalable processing, patterning optically coupled GaN-InGaN core-shell nanorods is a highly practical approach for building various on-chip optical components including emitters and coupled resonator waveguides in visible and ultraviolet spectral range.
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    Quantum dot vertical-cavity surface-emitting lasers covering the \'green gap\'
    (2017-01)
    Mei, Yang
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    Weng, Guo-En
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    Zhang, Bao-Ping
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    Liu, Jian-Ping
    ;
    Hofmann, Werner
    Semiconductor vertical-cavity surface-emitting lasers (VCSELs) with wavelengths from 491.8 to 565.7 nm, covering most of the \'green gap\', are demonstrated. For these lasers, the same quantum dot (QD) active region was used, whereas the wavelength was controlled by adjusting the cavity length, which is difficult for edge-emitting lasers. Compared with reports in the literature for green VCSELs, our lasers have set a few world records for the lowest threshold, longest wavelength and continuous-wave (CW) lasing at room temperature. The nanoscale QDs contribute dominantly to the low threshold. The emitting wavelength depends on the electron-photon interaction or the coupling between the active layer and the optical field, which is modulated by the cavity length. The green VCSELs exhibit a low-thermal resistance of 915 kW(-1), which benefits the CW lasing. Such VCSELs are important for small-size, low power consumption full-color displays and projectors.
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    新穎高亮度發光二極體結構成長與製作(II)
    (2011)
    張俊彥
    ;
    CHANG CHUN-YEN
    ;
    國立交通大學電子工程學系及電子研究所
    節能減碳是目前全球矚目的議題，綠色產品方興未艾。白光發光二極體由於具有節 省能源、環保、高壽命與堅固耐用等優點，因此目前中、美、日、韓歐洲等國家均透 過國家型計畫，投入大量資金及人員全力積極發展相關技術與應用。自從高品質的氮 化鎵(GaN) 被Shuji Nakamura 成功的以有機金屬化學氣相沈積法(MOCVD) 成長之 後，引起學界及業界極大的興趣並投入大量的研發。三族-氮化物系列及其合金材料為 直接能隙，而且光譜涵蓋由紅外光到紫外光的範圍(Eg,InN = 0.7 eV， Eg,GaN = 3.4 eV，Eg,AlN = 6.2 eV)，對各種光電領域的應用，如發光二極體(LED) 或是太陽能電 池(solar cell) 等有著極大的潛力。白光發光二極體在固態照明的應用上尚未完全普 及，最主要的因素有下列幾點：(1)售價太高、(2)效率太低、(3)散熱問題及(4)標準化及 穩定度問題。價格與效率息息相關，有鑑於此，我們將於兩年計畫中提出可以提升內 部量子效益及外部量子效益的方法。內部量子效益將透過量子井/位能障結構設計及採 用無極性材料來達成，外部量子效益將透過奈米柱緩衝層及倒金字塔結構來達成，預計 可藉此提升70%~80%的外部量子效益，及達到60%~70%內部量子效益。