🏛️國立陽明交通大學機構典藏

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On Characteristic Fluctuation of Nonideal Bulk FinFET Devices
(2014)
Li, Yiming
;
Huang, Wen-Tsung
;
交大名義發表
;
傳播研究所
;
電機學院
This work, for the first time, estimates the random dopant fluctuation (RDF) on DC characteristics of trapezoidal bulk FinFET devices by using an experimentally calibrated 3D quantum-mechanically corrected device simulation. For bulk FinFET devices under the same channel volume, we analyze the impact of geometry variation and RDF on the threshold voltage, the on-/off-state current with respect to different channel fin angles. The channel fin angle increases, the on-state current increases owing to increase of total fin width, but small-and large-fin-angle devices have comparable RDF. The threshold voltage is affected to different extents by RDs appearing in the upper and lower channel fin regions. Two major factors, the total fin width and the RD\'s position, affecting the Vth fluctuation of RDF are discussed.
Reflectance of Sub-Wavelength Structure on Silicon Nitride for Solar Cell Application
(2009)
Sahoo, Kartika Chandra
;
Li, Yiming
;
Chang, Edward Yi
;
Lin, Men-Ku
;
Huang, Jin-Hua
In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si(3)N(4)) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We compare the results of single- and double-layer-antireflection (SLAR and DLAR) coatings with SWS on Si(3)N(4), taking into account average residual reflectivity over a range of wavelengths, where the solar efficiency is further estimated. A low average residual reflectivity of 9.56% could be obtained for a Si(3)N(4) SWS height and non-etched layer of 140 nm and 60 nm respectively, which will be less than 80 nm Si(3)N(4) SLAR (similar to 15%) and almost the same as that of a DLAR with 60 nm Si(3)N(4) and 70 nm magnesium fluoride (similar to 10%).
Characteristics Variability of Novel Lateral Asymmetry Nano-MOSFETs due to Random Discrete Dopant
(2009)
Lee, Kou-Fu
;
Hwang, Chih-Hong
;
Li, Tien-Yeh
;
Li, Yiming
;
電信工程研究所
In nanoscale silicon FETs, the lateral asymmetric channel (LAC) devices with higher channel doping concentration near the source-end have shown better control of the short channel effects. However, such asymmetric doping profile may introduce different fluctuations in device characteristics. In this paper, the asymmetric sketch of random dopants distribution near source and drain sides in 16 nm bulk MOSFETs' channel is explored. Discrete dopants distributed near-source end and near-drain end of channel region induce rather different fluctuations of gate capacitance and high frequency characteristics. The proposed inverse lateral asymmetry doping profile can effectively suppress both the DC and high frequency characteristic fluctuations, which may benefit the design of sub-20-nm MOSFETs.
Design and Fabrication of Sub-Wavelength Structure on Silicon Nitride for Solar Cells
(2009)
Sahoo, Kartika Chandra
;
Li, Yiming
;
Lin, Men-Ku
;
Chang, Edward Yi
;
Huang, Jin-Hua
In this study, we explore the spectral reflectivity of pyramid-shaped silicon nitride (Si3N4) sub-wavelength structures (SWS). First, a multilayer rigorous coupled-wave approach is advanced to investigate the reflection properties of Si3N4 SWS. We first optimize Si3N4 SWS structure for the best effective reflectance properties. The results of our study show that a lowest effective reflectivity of 1.77% can be obtained for the examined Si3N4 SWS with the height of etched part of Si3N4 and the thickness of non-etched layer of 150 nm and 70 nm. Then, we develop a simple and scalable approach for fabricating SWS on silicon nitride by means of self-assembled nickel nano particle masks and inductively coupled plasma ion etching. Silicon nitride SWS surfaces with diameter of 120 nm - 180 nm and a height of 150 nm - 160 nm were obtained for lowest average reflectivity for wavelength range from 190 nm to 1000 nm. A low reflectivity below 1% was observed over wavelength from 600 to 800 nm. The measured reflectivity is closely matched with the simulated results. Using the measured reflectivity data, the solar cell characteristics has further been compared for single layer antireflection coatings and SWS structures and a 1.31% improvement in efficiency was observed.
Reduction of Discrete-Dopant-Induced High-Frequency Characteristic Fluctuations in Nanoscale CMOS Circuit
(2008)
Li, Yiming
;
Hwang, Chih-Hong
;
Yeh, Ta-Ching
;
Huang, Hsuan-Ming
;
Li, Tien-Yeh
As the dimension of semiconductor device shrunk into nanoscale, characteristic fluctuation is more pronounced, and become crucial for circuit design. Diverse approaches have been reported to investigate and suppress the random-dopant-induced fluctuations in devices. However, attention is seldom drawn to the existence of high-frequency characteristic fluctuations of active device. In this paper, intrinsic high-frequency characteristic fluctuations of the nanoscale MOSFET circuit induced by random dopants are intensively explored using an experimentally validated simulation methodology, where fluctuation suppression technique is further examined. The circuit gain, the 3db bandwidth and the unity-gain bandwidth of the tested circuit are estimated concurrently capturing the discrete-dopant-number-and discrete-dopant-position-induced fluctuations. This study provides an insight into discrete-dopant-induced intrinsic high-frequency characteristic fluctuations and examines the potential fluctuation suppression technique for nanoscale transistor circuit.

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