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ESD Improvements on Power N-Channel LDMOS Devices by the Composite Structure of Super Junctions Integrated With SCRs in the Drain Side
(2020-01-01)
Chen, Hung-Wei
;
Chen, Shen-Li
;
Huang, Yu-Ting
;
Chen, Hsun-Hsiang
;
電子工程學系及電子研究所
This paper studies a composite power n-channel lateral-diffused MOSFET device with a super junction (SJ) and parasitic silicon-controlled rectifier structure (nLDMOS-SJ-SCR) in the drain side, which can be used for electrostatic discharge (ESD) and latch-up (LU) reliability enhancements of 60-V power electronics. For ESD and LU protection considerations, the drain side with an SJ structure integrated with p-n-p- and n-p-n-arranged types of nLDMOS-SCR transistors is demonstrated. According to the experimental data, the layout of the SJ structure in the drain side has positive effects on ESD and LU capabilities. The layout type of nLDMOS-SJ with a pillar width W = 9 mu m has the highest secondary breakdown current (I-t2) values; the ESD (LU) improvement was 46.3% (13.3%) compared with the nLDMOS reference sample. Meanwhile, an nLDMOS-SJ with a pillar width W = 27 mu m has the highest figure of merit (FOM) value. By contrast, an embedded p-n-p-(n-p-n-)arranged type SCR structure was added into the drain side once again. Initially, it has a positive (negative) effect on the ESD reliability. Furthermore, the ESD (figure of merit; FOM) improvement was 37.9% (13.72%) of the corresponding nLDMOS-SJ device for nLDMOS-SJ-SCR (p-n-p) with W = 27 mu m. Overall, an nLDMOS-SJ device integrated with the p-n-p-arranged-type SCR in the drain side is a favorable choice for ESD and LU improvements.
Interface Defect Shielding of Electron Trapping in a-InGaZnO Thin Film Transistors
(2020-09-01)
Lin, Chih-Chih
;
Tai, Mao-Chou
;
Chang, Ting-Chang
;
Tsao, Yu-Ching
;
Wang, Yu-Xuan
In this work, an abnormal lowering of subthreshold swing (SS) after self-heating stress in a device with thick channel is observed. A model of interface defect shielding is proposed, based on electron trapping at the channel/gate insulator interface. The phenomenon is discussed systematically through the band diagram and extractions of the field effective mobility. Results suggest that a depletion region appears after electron trapping at the front channel, which then prevents the carriers from reaching the interface defects. Therefore, an abnormal superior electrical performance after stress is observed. Finally, a dual gate amorphous InGaZnO (a-IGZO) thin film transistor (TFT) is used to clarify the phenomenon. Results from different top gate bias voltage confirms the bulk accumulation and better gate control.
A Binding Algorithm of Lower Boundary Points Generation for Network Reliability Evaluation
(2020-09-01)
Huang, Ding-Hsiang
;
Huang, Cheng-Fu
;
Lin, Yi-Kuei
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
Network reliability evaluation for a stochastic flow network (SFN) can be computed in terms of all lower boundary points (LBPs). Although several algorithms have been presented in the literature as solutions for the LBP problem, the efficiency is always occurring at the present for the large SFN. In this paper, a binding technique generating binding-flow vectors is therefore developed to narrow down the searching range of flows for demand. This technique is able to reduce the loading of the candidate comparison procedure greatly. An algorithm based on this binding technique is proposed to solve the LBP problem. We compare the performance of the proposed algorithm to well-known algorithms in terms of CPU time, through three benchmark networks and a practical case. The experimental results show the functional efficiency of our proposed binding LBP algorithm.
Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
(2020-08-01)
Huang, Shin-Ping
;
Chen, Hong-Chih
;
Chen, Po-Hsun
;
Zheng, Yu-Zhe
;
Chu, Ann-Kuo
The extent of the poly-silicon crystalline protrusion, a result of differences in excimer laser annealing (ELA), affects the performance and reliability of thin-film transistors (TFTs). This study investigates the degradation mechanism of the low-temperature polycrystalline silicon (LTPS) TFT devices with differences in crystalline protrusion under self-heating stress (SHS). Higher ELA energy will induce higher protrusion height in the interface between the poly-silicon and gate insulator (GI). This surface morphology leads to serious charge trapping into the GI layers; in contrast, the smallest degradation after SHS can be seen in the devices with the lowest protrusion height. This indicates that the degradation is caused by the surface morphology between the poly-Si and GI interface. In addition, the COMSOL simulation results confirm that the large electric field in the GI layer appears in the rough surface morphology devices; therefore, choosing the appropriate ELA energy of the poly-Si is beneficial for the applications of the driving TFT in organic light-emitting diode (OLED) display in the manufacturing industry.
Post-Processing for CRC-Aided Successive Cancellation List Decoding of Polar Codes
(2020-07-01)
Wang, Chung-Hsuan
;
Pan, Yi-Han
;
Lin, Yu-Heng
;
Ueng, Yeong-Luh
;
電機工程學系
In this letter, three post-processing schemes for cyclic redundancy check (CRC-)aided successive cancellation list (CA-SCL) decoding are presented for polar codes. The re-decoding based on our post-processing schemes can effectively alleviate both the channel and decision errors encountered via CA-SCL decoding. Simulation results show that our schemes perform better than conventional re-decoding schemes and can be incorporated into a polar decoder that has a small list size to achieve a performance that is expected for a large list size.
A novel minimal cut-based algorithm to find all minimal capacity vectors for multi-state flow networks
(2020-05-01)
Huang, Ding-Hsiang
;
Huang, Cheng-Fu
;
Lin, Yi-Kuei
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
y Real systems, such as computer systems, can be modeled as network topologies with vertices and edges. Owing to equipment failures and maintenance requirements, the capacities of edges have several states. Such systems are regarded as multi-state flow networks (MSFN). System reliability of an MSFN is the probability that the required flow (i.e., demand) can successfully be sent from the source to the sink. By adopting a minimal path (MP) approach, system reliability can be computed in terms of all minimal capacity vectors meeting the demand d. A minimal capacity vector is called a d-MP. Although several algorithms have been presented in the literature for finding all d-MP, improving efficiency in the search for all d-MP is always a challenge. A group approach with both the concepts of minimal cut and MP is developed in this study, narrowing the search range of feasible flow vectors. An algorithm based on the group approach is then proposed to improve the efficiency of the d-MP search. According to the structure of the proposed algorithm, parallel computing can be implemented with significant improvement in the efficiency of the d-MP generation, where the proposed algorithm is compared with previous ones based on three benchmarks, in terms of CPU time. (C) 2019 Elsevier B.V. All rights reserved.
Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing
(2020-07-01)
Wu, Chien-Hung
;
Kuo, Song-Nian
;
Chang, Kow-Ming
;
Chen, Yi-Ming
;
Zhang, Yu-Xin
Recently resistive random access memory (RRAM) is considered to be the most promising one to become the next generation memory since its simple Metal/Insulator/Metal (MIM) structure, lower power consumption and fabrication cost (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9(1), p.526). Due to some bottlenecks for current flash memory such as high operation voltage, low operation speed, poor retention time and endurance, RRAM device is regarded as an alternative solution (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). In this investigation, the memory layer of RRAM device is IGZO, and it is deposited with AP-PECVD technique which can operate under atmosphere, reduce cost of the process. Microwave annealing (MWA) is used to enhance the RRAM device reliability (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). Experiment shows that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics, reliability issues such as numbers of switching cycle and data retention time are also improved (Teng, L.F., et al., 2012. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor.
Reliability analysis of composite wind turbine blades considering material degradation of blades
(2020-02-15)
Su, H. M.
;
Kam, T. Y.
;
交大名義發表
;
National Chiao Tung University
In this study, a set of analytical methods was proposed to evaluate the reliability of composite wind turbine blades after material aging, and to improve the blade structure strength to enhance its reliability. Because, the material aging will occur when the blade is affected by the external environment for a long time, consequently, time is an extremely important factor in reliability. Therefore, it is necessary to simulate the effect of environment on materials by aging experiments, so as to obtain the relationship between time, material strength and material constant. The reliability evaluation method used in this study is the direct integration method, which can quickly evaluate the reliability of blades degraded by materials. Because the reliability of the unmodified blade impossible be more than 98% after 20 years, it is necessary to improve the blade and then evaluate the reliability. The weight of the improved blade increased by only 8.57%, but the wind speed of buckling could be delayed by 32.47%, and the reliability could be more than 99% after 20 years, so the improved method meets the demand.
Degradation mechanisms of bias stress on nitride-based near-ultraviolet light-emitting diodes in salt water vapor ambient
(2019-10-15)
Chen, Lih-Ren
;
Huang, Shen-Che
;
Chiu, Jo-Lun
;
Lu, Chien-Cheng
;
Su, Wei-Ming
Degradation mechanisms of nitride-based near-ultraviolet (near-UV) light-emitting diodes (LEDs) were systematically analyzed by applying forward- and reverse-bias stresses to them in a salt water vapor ambient. The surface temperature of the forward-bias stress sample was higher than that of the reverse-bias stress sample. The high temperature of the forward-bias stress sample accelerated the chemical reaction of the device structure with salt water vapors and led to faster degradation. Composition analyses of the sample surface and cross-section were conducted to investigate the failure mechanism. The analyses results indicated that the erosion of the indium-tin-oxide layer enhanced the diffusion of the conducting metal into the LED crystal. The proposed method can effectively characterize the quality of near-UV LEDs in a short duration.
Preface: reliability and quality management in stochastic systems
(2019-06-01)
Lin, Yi-Kuei
;
Zuo, Ming J.
;
Hoang Pham
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
This special issue of the Annals of Operations Research is related to the Asia-Pacific International Symposium on Advanced Reliability and Maintenance Modeling (APARM 2016), held during 24-26 August 2016, at the Hanyang University, Seoul, South Korea. It focuses on new international research in theoretical and related applications to solve quality management problems. Reliability and quality management are quite important in many practical stochastic systems, such as computer systems, logistic systems, production systems, and the like. Developing and applying operations research methods to measure the robustness and to solve the engineering problem of a stochastic system is indeed a crucial task, enabling the system manager to carry out improvements after measuring the stochastic system.

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