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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    High-Efficiency AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using a Sub-Micron Deep-UV T-Shaped Gate Technology
    (2000)
    Lai, Yeong-Lin
    ;
    Chang, Edward Yi
    ;
    Lee, Di-Houng
    ;
    Chen, Szu-Hung
    ;
    材料科學與工程學系
    A class-B AlGaAs/InGaAs/GaAs pseudomorphic power high-electron-mobility transistor (HEMT) with high power performance has been developed. A simple fabrication method of a sub-micron T-shaped gate using the deep-UV lithography technology with tri-layer photoresists is presented for improvement of efficiency and gain of a pseudomorphic power HEMT. The AlGaAs/InGaAs/GaAs multinary compound material structure of the HEMT was grown by the molecular-beam epitaxy (MBE). The HEMT with a gate width of 3.36 mm and a gate length of 0.5 mu m exhibits a transconductance of 383 mS/mm. The saturation drain-to-source current (IDss) is 265 mA/mm. At an operation frequency of 1.9 GHz, the device demonstrates a power-added efficiency (PAE) of 65% at a drain bias of 1.2 V and a quiescent drain current of 30 mA (3.37% I-DSS). The state-of-the-art power characteristics are, for the first time, achieved by the AlGaAs/InGaAs/GaAs pseudomorphic power HEMT using a sub-micron deep-UV T-shaped gate technology.