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🏛️國立陽明交通大學機構典藏

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    Enhancement of CMOS THz Imaging Sensing By Packaging Technology
    (2017-01-01)
    Kuo, Chien-Nan
    ;
    Chen, Wei-Cheng
    ;
    Chiu, Te-Yen
    ;
    Li, Chun-Hsing
    ;
    電子工程學系及電子研究所
    Terahertz imaging sensing provides numerous attractive applications in different areas, for example, biology and medicine. CMOS technology benefits an imaging system in low cost and a small form factor. The technology advance is technically viable for circuit design in such high frequencies. Lossy silicon substrate, however, still degrades system performance. We will discuss the techniques of performance enhancement.
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    High Transmittance Broadband THz Polarizer Using 3D-IC Technologies
    (2017-01-01)
    Chi, Nai-Chen
    ;
    Yu, Ting-Yang
    ;
    Tsai, Hsin-Cheng
    ;
    Wang, Shiang-Yu
    ;
    Luo, Chih-Wei
    A novel method of fabricating high transmittance and broadband terahertz (THz) polarizers is introduced with several advantages. A polarizer with an approximate 100% transmittance is demonstrated with single central frequency of anti-reflection (AR) layers between 0.5 THz and 2 THz. Broadband polarizer, which has a transmission spectrum of over 70% uniformity, is fabricated by bonding two wafers with different AR layers. The bandwidth of broadband THz polarizer exceeds 1 THz. Extinction ratio of the polarizer is about 30 dB depending on the frequency and Cu wire pitch. The high transmittance and broadband THz polarizer can be achieved through deep reactive-ion etching (DRIE) and wafer bonding. This new fabricating method of THz polarizers has advantages of lower cost, no accurate alignment requirement and robust structure. Therefore, this approach can possibly benefit the mass production of THz optical components in THz applications and even more.
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    Low-Cost High-Performance CMOS Terahertz Imaging System
    (2015)
    Li, Chung Hsing
    ;
    Yan, Tzu-Chao
    ;
    Chang, Yuhsin
    ;
    Chen, Chyong
    ;
    Kuo, Chien-Nan
    CMOS technology has found its way in THz imaging applications. Utilizing the plasma wave theory, a MOSFET device can detect THz radiation beyond the cutoff frequency. Assisted by the system-on-packaging technique, a CMOS source delivers radiation power more effectively. An imaging system demonstrates that a low-cost CMOS solution is feasible.
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    A Broadband Interconnect for THz Heterogeneous System Integration
    (2013)
    Li, Chun-Hsing
    ;
    Wu, Jan-Jr
    ;
    Kuo, Chien-Nan
    ;
    Cheng, Yu-Ting
    ;
    Kuo, Ming-Ching
    A broadband interconnect for THz heterogeneous system integration is proposed using a resonator coupling technique. Two resonators, deployed on a chip and a carrier, respectively, are coupled through the electromagnetic field to provide a low-loss interconnect in a broadband manner. Simulation results indicate an insertion loss of 0.32 dB at 170 GHz while covering 3-dB bandwidth from 100 to 344 GHz. Measurement can be conducted to verify its performance only from 140 GHz to 220 GHz, due to equipment limit. The measured minimum insertion loss is 0.47 dB at 164 GHz.
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    A Low-Cost Broadband Bondwire Interconnect for THz Heterogeneous System Integration
    (2015)
    Li, Chun-Hsing
    ;
    Lai, Chih-Wei
    ;
    Yan, Tzu-Chao
    ;
    Kuo, Chien-Nan
    ;
    電機工程學系
    A low-cost broadband bondwire interconnect is proposed for THz heterogeneous system integration. A transversal path composed of two transmission lines and a bondwire is introduced to effectively reduce the bondwire effect of an original signal path consisted of a single bondwire only. Simulation results indicate that the return loss and insertion loss can be better than 15 dB and 2.3 dB from dc to 456 GHz, respectively. Measured interconnect loss is around 0 dB to 1.5 dB from 320 to 340 GHz.
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    利用摻雜之硒化鎵晶體產生兆赫波之研究
    (2008)
    羅志偉
    ;
    Luo Chih-Wei
    ;
    國立交通大學電子物理學系(所)
    本計畫將尋找適當的元素摻雜於非線性半導體硒化鎵晶體中，以提高 其產生兆赫波之效率。近來已有研究群利用硒化鎵晶體產生一可調波長之 兆赫波幅射。也因為此種晶體在兆赫波波段吸收率較低，所以在眾多非線 性光學晶體中最被看好的材料之一。不過其本身的均勻度及光學透明度， 卻成為產生高功率兆赫波幅射之限制。一般來說，利用差頻產生兆赫波的 方法中，增加晶體厚度應該可增加兆赫波的輻射功率。但到目前為止，實 驗上並未觀察到此現象。因此，透過離子半徑較大元素的摻雜來增加其極 化率或均勻度以提高兆赫波的輻射功率。另外，利用偶極天線的結構來產 生兆赫波幅射，同樣透過不同元素的摻雜，也可增加其電阻率及載子之遷 移率以提高兆赫波的輻射效率，同時更可研究其載子之動力學性質。所以， 不管利用何種方式產生兆赫波輻射，本計劃的目標在透過不同元素之摻 雜，同時配合尋找穩定的長晶條件，以得到一具有高均勻度、高機械強度、 高透光率、高電阻率等特性之高品質非線性半導體硒化鎵晶體，進而實現 高功率及波長可調之兆赫波幅射光源。最後，將利用此兆赫波幅射進行高 溫超導體、多鐵錳氧化物、磁性半導體或半導體量子點之超快動力學研究。
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    THz醫學影像系統及元件---子計畫五：應用微機電之兆赫波導設計(I)
    (2010)
    郭建男
    ;
    KUO CHIEN-NAN
    ;
    國立交通大學電子工程學系及電子研究所
    本計劃在於研究使用微機電異質整合技術，在矽製程半導體上進行波導與天線設計與製 作，應用在兆赫波(次毫米波，或T-射線)影像系統，達到非侵入式或近距離偵測目的。 利用T-射線頻段特性，可以有甚佳的接析度，而半導體技術更可以提高系統的可攜帶性 與降低成本。但受限於訊號功率產生的大小仍然相當有限，因此高效能的訊號傳輸相當 重要。在此頻段，電路區塊間的連接及訊號發射與接收的被動元件結構設計，必須考慮 半導體製程特性，設計適當結構。波導與不連續介面位置，除了阻抗，電磁場型的匹配 也是很重要，而天線設計也對訊號成像與接收有很大關係。被動元件的設計將分析傳統 平面型式與三維型式結構的特性，以達到最佳化效能，也將配合相關子計畫開發新式適 合影像系統結構。而所設計的結構將開發微機電技術進行實作，及量測驗證。在整合時， 可以利用已開發的系統封裝設計平台驗證設計流程，大幅降低複雜度，簡化難度。
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    THz醫學影像系統及元件-子計畫五：應用微機電之兆赫波導設計( II )
    (2011)
    郭建男
    ;
    KUO CHIEN-NAN
    ;
    國立交通大學電子工程學系及電子研究所
  • Thumbnail Image
    Item type:Item,
    利用摻雜之硒化鎵晶體產生兆赫波之研究
    (2007)
    羅志偉
    ;
    Luo Chih-Wei
    ;
    國立交通大學電子物理學系(所)
    本計畫將尋找適當的元素摻雜於非線性半導體硒化鎵晶體中，以提高 其產生兆赫波之效率。近來已有研究群利用硒化鎵晶體產生一可調波長之 兆赫波幅射。也因為此種晶體在兆赫波波段吸收率較低，所以在眾多非線 性光學晶體中最被看好的材料之一。不過其本身的均勻度及光學透明度， 卻成為產生高功率兆赫波幅射之限制。一般來說，利用差頻產生兆赫波的 方法中，增加晶體厚度應該可增加兆赫波的輻射功率。但到目前為止，實 驗上並未觀察到此現象。因此，透過離子半徑較大元素的摻雜來增加其極 化率或均勻度以提高兆赫波的輻射功率。另外，利用偶極天線的結構來產 生兆赫波幅射，同樣透過不同元素的摻雜，也可增加其電阻率及載子之遷 移率以提高兆赫波的輻射效率，同時更可研究其載子之動力學性質。所以， 不管利用何種方式產生兆赫波輻射，本計劃的目標在透過不同元素之摻 雜，同時配合尋找穩定的長晶條件，以得到一具有高均勻度、高機械強度、 高透光率、高電阻率等特性之高品質非線性半導體硒化鎵晶體，進而實現 高功率及波長可調之兆赫波幅射光源。最後，將利用此兆赫波幅射進行高 溫超導體、多鐵錳氧化物、磁性半導體或半導體量子點之超快動力學研究。
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    High Performance RF Passive Devices and Noise-Shielding MOSFET on IC-Standard Si Wafer for Sub-THz Applications
    (2013)
    Chin, Albert
    ;
    Kao, Hsuan-Ling
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The operation frequency of a MOSFET is approaching THz as continuously scaling down into 1X nm. Nevertheless, the very high power loss of transmission line on IC-Standard Si wafer (similar to 5 dB/mm at 110 GHz) is the fundamental limitation for Si-based sub-THz IC. Using a simple method to translate standard 10 Omega-cm low resistivity into semi-insulating, very low loss transmission line and broad filters have been realized on Si wafer to 110 GHz, with performance near ideal devices by EM design. The noise coupling of CPW-layout RF MOSFET can also be filtered using a microstrip line design, and a low min. noise figure (NFmin) of 0.5 dB at 10 GHz was measured in a 90 nm MOSFET.