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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    High Performance of Ge nMOSFETs Using SiO2 Interfacial Layer and TiLaO Gate Dielectric
    (2010-01-01)
    Chen, W. B.
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    Chin, Albert
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    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    Using a SiO2 interfacial layer and a high-kappa gate TiLaO dielectric, the TaN/TiLaO/SiO2 on Ge/Si nMOSFETs in this study showed a small 1.1-nm capacitance equivalent thickness, a good high field mobility of 201 cm(2)/(V . s) at 0.5 MV/cm, and a very low OFF-state leakage current of 3.5 x 10(-10) A/mu m. The self-aligned and gate-first metal-gate/high-kappa and Ge nMOSFETs were processed using standard ion implantation and 550 degrees C RTA. The proposed devices are fully compatible with current VLSI fabrication methods.
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    TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density
    (2015-04-01)
    Cheng, Chun-Hu
    ;
    Hsu, Hsiao-Hsuan
    ;
    Chou, Kun-I
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    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We report a low-temperature InP p-MOS with a high capacitance density of 2.7 mu F/cm(2), low leakage current of 0.77 A/cm(2) at 1 V and tight current distribution. The high-density and low-leakage InP MOS was achieved by using high-kappa TiLaO dielectric and ultra-thin SiO2 buffer layer with a thickness of less than 0.5 nm. The obtained EOT can be aggressively scaled down to <1 nm through the use of stacked TiLaO/SiO2 dielectric, which has the potential for the future application of high mobility III-V CMOS devices.