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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 6 of 6
  • Item type:Item,
    2.4-GHz Tunable Miniature CMOS Active Bandpass Filter With Two Transmission Zeros Using Lumped Stepped-Impedance Ring Resonator
    (2018-01-01)
    Hsiao, Yu-Chih
    ;
    Meng, Chinchun
    ;
    Chien, Hsieh-Hsiu Chang
    ;
    Huang, Guo-Wei
    ;
    電機工程學系
    This paper demonstrates a small-size 2.4-GHz CMOS active bandpass filter with two transmission zeros using a lumped stepped-impedance ring resonator. To obtain low insertion loss and small size, four high-Q active inductors using 0.18 gm CMOS transistors only are employed in the design. The measured insertion loss is 2.9-dB at 2.4 GHz center frequency with two transmission zeros located at 2.1 GHz and 3.1 GHz, respectively. By tuning the bias currents of active inductors, the center frequency has 1.4 GHz tuning range and the 1-dB bandwidth can be adjusted in the range of 190 MHz to 260 MHz. The demonstrated active filter occupies a small chip area of 0.47 mm x 0.33 mm excluding I/O pads and has 24 dB noise figure. Thus, an active filter with a preceding two-stage common-source LNA for suppression of noise of the active filter is also demonstrated and the resulting LNA + active filter has 6 dB noise figure. The power consumption of the active filter core and the LNA core is 9 mW and 7.2 mW, respectively.
  • Item type:Item,
    Temperature-Insensitive Gyrator-based Active Inductor with the Complementary Technique and Its Applications
    (2014)
    Lin, Chun-Yi
    ;
    Li, Wei-Tsung
    ;
    Rao, Pei-Zong
    ;
    Chung, Shyh-Jong
    ;
    電信工程研究所
    In this paper, a novel temperature-insensitive gyrator is proposed with a temperature-compensated technique. The proposed gyrator-based active inductor composed of two back-to-back transconductors with a complementary technique are realized in triple-well 0.18-mu m CMOS technology. The complementary circuit topology is adopted to decrease the variation caused by temperature effect on the tranceconductance of the gyrator. Based on the temperature-compensated gyrator, the measured resonate frequency variation of the proposed gyrator-based active LC-tank circuit topology is less than 1% from 8.72% when the temperature varies from -20 to +60 degree centigrade (C-0). The value of frequency variation percentage over per degree centigrade is simply 0.012 which presents a lowest frequency variation than the traditional gyrator topology.
  • Item type:Item,
    A novel RF CMOS active inductor
    (2003-07-01)
    Yang, JN
    ;
    Cheng, YC
    ;
    Lee, CY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A novel RF CMOS high Q-value active inductor is proposed in this work by using simple cascode RC feedback compensation technique. The performance of this active inductor has maximum Q-value about 1.2E6, inductance value from 3.5 nH to 4.5 nH and 3E-5Omega of minimum total equivalent loss, in the range of 1.2 GHz to 2 GHz.
  • Item type:Item,
    Improving RF CMOS active inductor by simple loss compensation network
    (2004-06-01)
    Lee, CY
    ;
    Yang, JN
    ;
    Cheng, YC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    An RF CMOS active inductor with a novel loss compensation circuit network is proposed. Performance of this active inductor can be improved by adding a novel network, which simultaneously reduces parallel and series losses. Consequently, this technique not only increases Q value, inductance, and operating frequency, but also reduces power consumption and circuit complexity. Simulation results show that better performance indices can be achieved, such as minimum total equivalent loss of 1 mOmega, maximum Q value about 3E5, and inductance value from 20 nH to 45 nH in the RF range of 0.6 GHz to 1.6 GHz. Power dissipation is around 1.76 mW under 2.5 V dc supply voltage.
  • Item type:Item,
    Loss compensation in RF CMOS active inductor using a capacitor
    (2004-12-01)
    Yang, JN
    ;
    Wu, MJ
    ;
    Lee, CY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Loss compensation in a RF CMOS active inductor with using a capacitor is proposed. This simple compensation technique yields a negative conductance characteristic that can compensate for the constant internal loss of active devices. Simulation results show that the inductor obtains a maximum Q-value of 1.2E8, an inductance value in the range of 50 nH to 450 nH, and a 1.4E-6 Omega of minimum total equivalent loss in the range of 0.6 GHz to 1.3 GHz.
  • Item type:Item,
    A constant power consumption CMOS LC oscillator using improved high-Q active inductor with wide rining-range
    (2004)
    Wu, MJ
    ;
    Yang, JN
    ;
    Lee, CY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    An improved CMOS high-Q active inductor and a constant power consumption oscillator with wide tuning-range are presented. The inductor using one feedback resistor results in a gain to improve the Q-value of the inductor and tune the inductance (L). Based on this inductor, a negative resistance LC-tuned oscillator with constant power consumption and wide tuning-range has been designed. The simulation results show that the improved active inductor can achieve the maximum Q-value of 3500. The power consumption of a constant value around 10mW exists in the oscillator. This oscillator also depicts a reasonable phase noise performance of -91dBc/Hz at 600 kHz from 0.8GHz to 3GHz range. Furthermore, the deviation of the phase noise is as small as 6dBc/Hz during this tuning-range.