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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    A novel thin-film transistor with vertical offset structure
    (1997-04-01)
    Lin, CW
    ;
    Chang, CY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A novel device structure consisting of conventional hydrogenated amorphous silicon (a-Si:H) for the source and drain and of hydrogenated microcrystalline soilicon (mu c-Si:H) for the channel region which can improve the performance of thin-film transistors (TFTs) has been proposed and fabricated. Undoped a-Si:H serves as a blocking layer to suppress the OFF-state current in the drain region which is comparable to that of conventional a-Si:H TFT with a much higher drivability. The fabrication process is simple and inexpensive e with the possibility of high reliability.
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    The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states
    (1997-10-01)
    Cheng, HC
    ;
    Tsai, JW
    ;
    Huang, CY
    ;
    Luo, FC
    ;
    Tuan, HC
    The instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses; the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFTs with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.
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    Low cost high-efficiency high-density-plasma Silicon-based thin film solar cells with high light-soaking stability
    (2012)
    Hsiao, T. H.
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    Shieh, J. M.
    ;
    Yu, P. C.
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    Shen, C. H.
    ;
    Kao, M. H.
    We investigate the performance of a single-junction amorphous Si (a-Si) and a-Si/a-Si tandem solar cells fabricated with Inductively Coupled Plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density. We demonstrate single-junction a-Si solar cells and a-Si/a-Si tandem solar cell with a conversion efficiency of 9.6% and 8.8%, respectively. Highly light-soaking stable high-density plasma-fabricated a-Si and a-Si/a-Si solar cells were demonstrated with photo-induced degradation in conversion-efficiency as low as 7% and 5%, respectively.