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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    Dynamic Conductivity of Ferroelectric Domain Walls in BiFeO3
    (2011-05-01)
    Maksymovych, Peter
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    Seidel, Jan
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    Chu, Ying Hao
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    Wu, Pingping
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    Baddorf, Arthur P.
    Topological walls separating domains of continuous polarization, magnetization, and strain in ferroic materials hold promise of novel electronic properties, that are intrinsically localized on the nanoscale and that can be patterned on demand without change of material volume or elemental composition. We have revealed that ferroelectric domain walls in multiferroic BiFeO3 are inherently dynamic electronic conductors, closely mimicking memristive behavior and contrary to the usual assumption of rigid conductivity. Applied electric field can cause a localized transition between insulating and conducting domain walls, tune domain wall conductance by over an order of magnitude, and create a quasicontinuous spectrum of metastable conductance states. Our measurements identified that subtle and microscopically reversible distortion of the polarization structure at the domain wall is at the origin of the dynamic conductivity. The latter is therefore likely to be a universal property of topological defects in ferroelectric semiconductors.
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    Magnetoresistance study of patterned permalloy nanostructures
    (2008-05-01)
    Chen, D. C.
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    Mei, J. K.
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    Wang, Y.
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    Yao, Y. D.
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    Wu, J. K.
    We demonstrated the domain wall motion along the direction of the perimeter of a permalloy ring in the onion state. From the magnetoresistance (MR) measurement with a rotating ring at different constant fields, the critical field to form the onion state is near 200 Gauss and the lowest field that can still drag the domain wall is between 20 and 10 Gauss. The results also revealed a tendency for angle shifting and indicated that the lowest field component in the perimeter direction (the tangential component) was near 10 Gauss at an applied field of 20 Gauss.