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Now showing 1 - 10 of 16

Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature
(2020-06-03)
Chang, Po-Yi
;
Lin, Ching-Fu
;
Rouphael, Samer El Khoury
;
Huang, Ting-Hsuan
;
Wu, Chang-Mao
A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200-300 degrees C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR-laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in ppb concentration), with room-temperature operation on a bendable substrate.
Flexible Heteroepitaxy Photoelectrode for Photo-electrochemical Water Splitting
(2018-08-01)
Le Thi Quynh
;
Chien Nguyen Van
;
Tzeng, W. Y.
;
Huang, Chun-Wei
;
Lai, Yu-Hong
MICAtronics represents a new research direction by taking the advantages of good mechanical flexibility and optical transparency of muscovite mica, leading to a new platform to use oxide heteroepitaxy for novel transparent soft technology. Here we report a model flexible photoelectrode for photo-electrochemical (PEC) water splitting based on Fe2O3/ZnO/mica heteroepitaxy. The heteroepitaxy was confirmed by a combination of X-ray diffraction and transmission electron microscopy. The PEC performance of this flexible and semitransparent photoelectrode under various bending states was investigated. We found that the photocurrent of the heteroepitaxial system was enhanced by three times relative to pure ZnO and Fe2O3 under visible-light irradiation, and the heteroepitaxial photoelectrodes retain their photocurrent after continuous bending in cycling (>3000 cycles) with a smallest bending radius of 3.5 mm. The energy band alignment and charge dynamics under light excitation were characterized to understand the mechanism of the enhanced PEC performance. This study provides a new platform for design and fabrication of a flexible transparent photoelectrode in the harvest of solar energy based on oxide heteroepitaxy.
Heteroepitaxy of Co-Based Heusler Compound/Muscovite for Flexible Spintronics
(2019-09-25)
Chen, Yi-Cheng
;
Yen, Min
;
Lai, Yu-Hong
;
Markou, Anastasios
;
Zhang, Liguo
Materials with high spin-polarization play an important role in the development of spintronics. Co-based Heusler compounds are a promising candidate for practical applications because of their high Curie temperature and tunable half-metallicity. However, it is a challenge to integrate Heusler compounds into thin film heterostructures because of the lack of control on crystallinity and chemical disorder, critical factors of novel behaviors. Here, muscovite is introduced as a growth substrate to fabricate epitaxial Co2MnGa films with mechanical flexibility. The feature of heteroepitaxy is evidenced by the results of X-ray diffraction and transmission electron microscopy. Moreover, high chemical ordering with superior properties is delivered according to the observation of large Hall conductivity (680 Omega(-1) cm(-1)) and highly saturated magnetic moment (similar to 3.93 mu(B)/f.u.), matching well with bulk crystals. Furthermore, the excellence of magnetic and electrical properties is retained under the various mechanical bending conditions. Such a result suggests that the development of Co2MnGa/muscovite heteroepitaxy provides not only a pathway to the thin film heterostructure based on high-quality Heusler compounds but also a new aspect of spintronic applications on flexible substrates.
Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
(2019-07-24)
Tsai, Meng-Fu
;
Jiang, Jie
;
Shao, Pao-Wen
;
Lai, Yu-Hong
;
Chen, Jhih-Wei
With the rise of Internet of Things, the presence of flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing the advantages of high speed, nondestructive readout, and low-power consumption, plays a key role in next-generation technology. However, the performance of these devices is restricted since conventional flexible substrates show poor thermal stability to integrate traditional ferroelectric materials, limiting the compatibility of wearable devices. In this study, we adopt flexible muscovite mica as a substrate due to its good thermal properties and epitaxial integration ability. A flexible FeFET composed of oxide heteroepitaxy on muscovite is realized by combining an aluminum-doped zinc oxide film as the semiconductor channel layer and a Pb(Zro7Ti0.3)03 film as the ferroelectric gate dielectric. The excellent characteristics of the transistor together with superior thermal stability and mechanical flexibility are demonstrated through various mechanical bending and temperature measurements. The on/off current ratio of the FeFET is higher than 103, which based on the field effect in the transfer curve. The smallest bending radius that can be achieved is 5 mm with a cyclability of 300 times and a retention of 100 h. This study opens an avenue to use oxide heteroepitaxy to construct a FeFET for next-generation flexible electronic systems.
Transparent Antiradiative Ferroelectric Heterostructure Based on Flexible Oxide Heteroepitaxy
(2018-09-12)
Ma, Chun-Hao
;
Jiang, Jie
;
Shao, Pao-Wen
;
Peng, Qiang-Xiang
;
Huang, Chun-Wei
In the era of Internet of Things, the demand for flexible and transparent electronic devices has shifted to the forefront of materials science research. However, the radiation damage to key performance of transparent devices under radiative environment remains as a critical issue. Here, we present a promising technology for nonvolatile transparent electronic devices based on flexible oxide heteroepitaxy. A direct fabrication of epitaxial lead lanthanum zirconate titanate on transparent flexible mica substrate with indium tin oxide electrodes is presented. The transparent flexible ferroelectric heterostructures not only retain their superior performance, thermal stability, reliability, and mechanical durability, but also exhibit remarkably robust properties against to a strong radiation exposure. Our study demonstrates an extraordinary concept to realize transparent flexible nonvolatile electronic devices for the design and development of next-generation smart devices with potential application in electronics, automotive, aerospace, and nuclear systems.
A Flexible Inductive Coil Tag for Household Two-Wire Current Sensing Applications
(2012-06-01)
Chen, Yung-Chang
;
Yu, Sung-Chu
;
Cheng, Shih-Hsien
;
Cheng, Yu-Ting
;
電子工程學系及電子研究所
This paper presents a flexible inductive coil tag for sensing the electric current in the two-wire power cords of household goods. The tag is fabricated using a complementary metal-oxide semiconductor compatible SU-8 flexible technology which provides unique device characteristics of low-cost, reliability and pervasiveness. With a 30-turns coil design in an area of 0.5x1 cm(2), the coil tag can provide sensitivity of 18 and 21 mu V/A for detecting 50-and 60-Hz electric current in the ampere regime, respectively.
Unraveling Sunlight by Transparent Organic Semiconductors toward Photovoltaic and Photosynthesis
(2019-02-01)
Liu, Yugiang
;
Cheng, Pei
;
Li, Tengfei
;
Wang, Rui
;
Li, Yaowen
Because the visible and the infrared (IR) regions take up similar to 47% and similar to 51% of the energy in the solar spectrum (AM 1.5G standard), respectively, utilizing the visible light for plant growth and the IR light for power generation is potentially extremely exciting. IR-absorbing organic semiconductors, with localized IR absorption and visible-light transmittance, would be promising materials for this purpose. Here, flexible transparent organic photovoltaics (TOPVs) based on IR-absorbing organic materials were proposed, which can be a simple, low-cost, and promising way to utilize the IR light for electricity generation, and the penetrated visible light will be utilized for photosynthesis in plants. A power-conversion efficiency of similar to 10% with an average visible transmittance of 34% was achieved for TOPV devices. Meanwhile, the side-by-side comparison showed that plants grown under the TOPVs filtered light, and those under normal sunlight yielded very similar results. These outcomes demonstrated the results from TOPV devices beyond simple photovoltaic applications.
Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy
(2017-06-01)
Amrillah, Tahta
;
Bitla, Yugandhar
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Shin, Kwangwoo
;
Yang, Tiannan
;
Hsieh, Ying-Hui
Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate damping effect still remains a major hurdle in realizing the ultimate magneto electric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric-ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. hi this study, we investigated the magnetoelectric coupling in a self-assembled BiFeO3 (BFO)-CoFe2O4 (CFO) bulk heterojunction epitaxially grown on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate damping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO-CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm.Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.
Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se-2 Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process
(2017-04-26)
Chen, Shih-Chen
;
She, Nian-Zu
;
Wu, Kaung-Hsiung
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Chen, Yu-Ze
;
Lin, Wei-Sheng
Ink-printing method emerges as a viable way for manufacturing large-scale flexible Cu(In,Ga)Se-2 (CIGS) thin film photovoltaic (TFPV) devices owing to its potential for the rapid process, mass production, and low-cost nonvacuum device fabrication. Here, we brought the femtosecond laser annealing (fs-LA) process into the ink-printing CIGS thin film preparation. The effects of fs-LA treatment on the structural and optoelectronic properties of the ink-printing CIGS thin films were systematically investigated. It was observed that, while the film surface morphology remained essentially unchanged under superheating, the quality of crystallinity was significantly enhanced after the fs-LA treatment. Moreover, a better stoichiometric composition was achieved with an optimized laser scanning rate of the laser beam, presumably due to the much reduced indium segregation phenomena, which is believed to be beneficial in decreasing the defect states of In-se, V-Se, and In-cu. Consequently, the shunt leakage current and recombination centers were enhancement in photovoltaic conversion efficiency. both greatly decreased, resulting in a near 20%
Aqueous Solution-Processable, Flexible Thin-Film Transistors Based on Crosslinked Chitosan Dielectric Thin Films
(2018-03-01)
Singh, Ranjodh
;
Lin, Yen-Ting
;
Ko, Fu-Hsiang
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The hydrophilic character of chitosan (CS) limits its use as a gate dielectric material in thin-film transistors (TFTs) based on aqueous solution-processable semiconductor materials. In this study, this drawback is overcome through controlled crosslinking of CS and report, for the first time, its application to aqueous solution-processable TFTs. In comparison to natural CS thin films, crosslinked chitosan (Cr-CS) thin films are hydrophobic. The dielectric properties of Cr-CS thin films are explored through fabrication of metal-insulator-metal devices on a flexible substrate. Compared to natural CS, the Cr-CS dielectric thin films show enhanced environmental and water stabilities, with a high breakdown voltage (10 V) and low leakage current (0.02 nA). The compatibility of Cr-CS dielectric thin films with aqueous solution-processable semiconductors is demonstrated by growing ZnO nanorods via a hydrothermal method to fabricate flexible TFT devices. The ZnO nanorod-based TFTs show a high field-effect mobility (linear regime) of 10.48 cm(2) V-1 s(-1). Low temperature processing conditions (below 100 degrees C) and water as the solvent are utilized to ensure the process is environmental friendly to address the e-waste problem.

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