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    High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO3 Gate Dielectrics
    (2010-12-01)
    Chen, W. B.
    ;
    Cheng, C. H.
    ;
    Chin, Albert
    ;
    光電學院
    ;
    電子工程學系及電子研究所
    This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm(2)/V . s at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 x 10(-10) A/mu m OFF-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 degrees C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-kappa LaAlO3 dielectric without using an interfacial layer. Using a different high-kappa HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.
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    Effect of NH3 Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-kappa Dielectric nMOSFETs
    (2011-03-01)
    Chen, Yu-Ting
    ;
    Chen, Kun-Ming
    ;
    Lin, Cheng-Li
    ;
    Yeh, Wen-Kuan
    ;
    Huang, Guo-Wei
    The effects of post-NH3 plasma nitridation on device's hot-carrier instability and low-frequency noise in the Hf-based high-kappa/metal-gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with gadolinium (Gd) cap layers are investigated. With postnitridation, the direct-current and 1/f noise characteristics can be improved apparently. Moreover, a hot-carrier stressing-induced threshold voltage shift can be also suppressed despite of a similar transconductance degradation when comparing with that in the device without nitridation. With the charge-pumping and low-frequency noise measurements, we find that the bulk-and interfacial-trap densities can be reduced with nitrogen incorporation. The reduction of bulk and interfacial traps can be contributed to the suppression of Gd diffusion into a high-kappa layer. In this paper, appropriate post-NH3 plasma nitridation can improve the device performance and reliability and low-frequency noise for a gate-first high-kappa/metal-gate nMOSFET with a Gd cap layer.
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    Ultra-Low Power Green Electronic Devices
    (2015)
    Yi, S. H.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Power consumption is the crucial challenge for electronics. To lower the DC leakage power (P-DC), we applied the high-kappa gate dielectric to CMOS from the physics of Q equivalent to CV. More than 2 orders of magnitude lower P-DC is obtained at small 0.5 similar to 0.9 nm equivalent-oxide-thickness (EOT). The high-kappa dielectric also increases the charge controllability of flash memory and decrease the V-T disturbance by nearly cells, which improves cell density and cost. The AC power (P-AC) can be lowered by using high-mobility Ge CMOS at a lower V-D and 3D IC with a small capacitance, from basic physics of P-AC equivalent to CV(D)(2)f/2.