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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
    (2010-10-01)
    Sahoo, Kartika Chandra
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    Kuo, Chien-I
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    Li, Yiming
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    Chang, Edward Yi
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    傳播研究所
    In this paper, we report the first result of a strained In(0.52)Ga(0.48) As channel high-electron mobility transistor (HEMT) featuring highly doped In(0.4)Ga(0.6) As source/drain (S/D) regions. A lattice mismatch of 0.9% between In(0.52)Ga(0.48) As and In(0.4)Ga(0.6) As S/D has resulted in a lateral strain in the In(0.52)Ga(0.48) As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.
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    Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices
    (2013-09-01)
    Chen, Chien-Hung
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    Li, Yiming
    ;
    Chen, Chieh-Yang
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    Chen, Yu-Yu
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    Hsu, Sheng-Chia
    In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (110) and (100) orientations of the devices. We further analyze four devices with different surface roughness along (100) and (100) orientations to demonstrate the influence of surface roughness on the total effective mobility. (C) 2013 Elsevier B.V. All rights reserved.