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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

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    高性能晶片電感器與變壓器之設計、特性分析與應用(II)
    (2008)
    吳霖？
    ;
    WU LIN-KUN
    ;
    國立交通大學電信工程學系(所)
    本計畫預計以三年的時間，分別完成高性能晶片電感器與變壓器之設計、特性分析 並應用於射頻積體電路設計上。首先，計劃第一年我們將利用電磁模擬軟體進行初步的 元件特性分析，經由獨特設計之晶圓測試結構萃取出矽晶圓的寬頻製程參數，便可針對 元件進行高頻傳輸行為之預測。而以往標準矽製程所製造出的電感器與變壓器普遍有著 品質因數(quality factor)與諧振頻率偏低的問題，我們將透過對金屬導線、氧化物絕緣層 及矽基板的電流密度與電磁場型的分析，搭配矽製程的多層次結構變換與佈局以提出新 式樣的電感器與變壓器設計。接著在計劃的第二年裡，我們將致力於發展準確的多埠 (multi-port)散射參數去嵌化技術以便得到更精確的高頻元件參數。延續以往在雙埠去嵌 化技術的經驗，搭配運用多埠網路分析與傳輸線理論，進而移除元件周圍的雜散寄生效 應。在計劃的第三年裡，將依據前兩年所得到的元件特性配合類神經網路及基因演算法 等技巧，進行模型建立並將其運用於射頻積體電路上。隨著無線通訊產品的廣泛運用， 各類通信標準相繼制定且規格愈趨嚴格，此更加突顯出關鍵元件研發之重要性，本計畫 之執行將可提高關鍵元件與電路性能，並達到產業技術提昇與人才培訓之目的，對國內 通訊技術成長與經濟發展作出貢獻。
  • Thumbnail Image
    Item type:Item,
    高性能晶片電感器與變壓器之設計特性分析與應用
    (2009)
    吳霖？
    ;
    WU LIN-KUN
    ;
    國立交通大學電信工程學系(所)
    本計畫預計以三年的時間，分別完成高性能晶片電感器與變壓器之設計、特性分析 並應用於射頻積體電路設計上。首先，計劃第一年我們將利用電磁模擬軟體進行初步的 元件特性分析，經由獨特設計之晶圓測試結構萃取出矽晶圓的寬頻製程參數，便可針對 元件進行高頻傳輸行為之預測。而以往標準矽製程所製造出的電感器與變壓器普遍有著 品質因數(quality factor)與諧振頻率偏低的問題，我們將透過對金屬導線、氧化物絕緣層 及矽基板的電流密度與電磁場型的分析，搭配矽製程的多層次結構變換與佈局以提出新 式樣的電感器與變壓器設計。接著在計劃的第二年裡，我們將致力於發展準確的多埠 (multi-port)散射參數去嵌化技術以便得到更精確的高頻元件參數。延續以往在雙埠去嵌 化技術的經驗，搭配運用多埠網路分析與傳輸線理論，進而移除元件周圍的雜散寄生效 應。在計劃的第三年裡，將依據前兩年所得到的元件特性配合類神經網路及基因演算法 等技巧，進行模型建立並將其運用於射頻積體電路上。隨著無線通訊產品的廣泛運用， 各類通信標準相繼制定且規格愈趨嚴格，此更加突顯出關鍵元件研發之重要性，本計畫 之執行將可提高關鍵元件與電路性能，並達到產業技術提昇與人才培訓之目的，對國內 通訊技術成長與經濟發展作出貢獻。
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    A fully integrated 5.2-GHz single-ended-in and single-ended-out 0.18-mu m CMOS Gilbert upconverter
    (2004-11-05)
    Meng, CC
    ;
    Lin, MQ
    ;
    Huang, GW
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A monolithic 5.2-GHz single-ended-in and single-ended-out Gilbert upconverter with balanced operation is demonstrated using 0.18-mum deep n-well CMOS technology. Thefully matched Gilbert upconverter has conversion gain of - 11.5 dB and OPIdB of - 19 dBm when input IF = 300 MHz, LO = 4.9 GHz, and output RF = 5.2 GHz. The IF input return loss is better than 14 dB for frequencies up to 7 GHz, while RF output return loss is 15 dB at 5.2 GHz. (C) 2004 Wiley Periodicals, Inc.
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    A CMOS low noise amplifier with RLC-impedance feedback for 3-5GHz ultra-wideband wireless system
    (2007)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    In this paper a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, a cascoded amplifier with shunt-peaked load, a RLC-impedance feedback loop and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.65dB maximum power gain between 3.1GHz-5.0GHz while consuming 12.51mW through a 1.8V supply voltage. Over the 3.1GHz-5.0GHz frequency band, the minimum noise figure (NIT) is 3.67dB. Input return loss lower than -10.1 dB in all bandwidth have been achieved.
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    CMOS dual-wideband low-noise amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for ultra-wideband wireless receiver
    (2007)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    Chen, Chun-Chieh
    ;
    Hung, Chung-Chih
    ;
    電信工程研究所
    In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.66dB maximum power gain between 3.0GHz-4.9GHz and 10.34dB maximum power gain between 6.0GHz-10.3GHz while consuming 24.07mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.0GHz-10.3GHz, a minimum noise figure is 2.6dB and 3.8dB. Input return loss lower than - 8.31dB in all bandwidth have been achieved.
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    A 2.4, 5.2, and 5.7 GHz CMFB gilbert downconverter with low-voltage cascode current mirror input stage
    (2006-11-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A triple-band (2.4, 5.2, and 5.7 GHz) CMFB downconversion micromixer with a low-voltage cascode current mirror RF input stage has been demonstrated by the 0.18-mu m CMOS technology in this letter. Micromixer has a single-ended RF input stage, the CMFB topology is adopted to improve the conversion gain, and a differential-to-single output buffer is used to convert the differential output of the mixer into a single-ended output. The fully integrated downconversion micromixer has the conversion gain of 12 dB, LO-to-IF isolation of 43 dB, LO-to-RF isolation of 48 dB, and RF-to-IF isolation of 18 dB at 2.4 GHz. The mixer has the conversion gain of 7.5 dB, LO-to-IF isolation of 54 dB, LO-to-RF isolation of 49.5 dB, and RF-to-IF isolation of 25 dB at 5.7 GHz. The total quiescent current consumption of the circuit is 7.6 mA. (c) 2006 Wiley Periodicals, Inc.
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    Seven GHz high gain 0.18 mu m CMOS gilbert downconverter with wide-swing cascode current mirrors
    (2008-02-01)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A downconversion micromixer with low-voltage cascode current mirrors at both transconductor and load stages has been implemented using the 0.18-mu m CMOS technology in this article. This micromixer has a single-to-differential RF input transconductor formed by the NMOS wide-swing cascade current mirror, while the PMOS wide-swing cascode current mirror is also employed to improve conversion gain. A super source follower is used at the output to reduce the output impedance and to transfer more power to the load. This fully integrated downconverter has the high conversion gain of 16 dB and high LO-to-IF isolation of 50 dB at 7 GHz. The current consumption of the mixer core is 1 mA at 1.8 V supply voltage. Thanks to the low-voltage operation property of the wide-swing cascode current mirror, six transistors can be stacked within 1.8 V supply voltage. (c) 2007 Wiley Periodicals, Inc.
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    A CMOS current reused low-noise amplifier for ultra-wideband wireless receiver
    (2008)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    Hung, Yeh-Tai
    ;
    Chen, Meng-Ping
    ;
    傳播研究所
    A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth which is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18um RF CMOS process. The LNA gives 13.1dB gain; 9.1GHz 3dB bandwidth (3.1-12.2GHz) while consuming 13.9mW through a 1.8V supply. Over the 3.1GHz - 10.6GHz frequency band, a minimum noise figure of 2.7dB and input return loss lower than -8.7dB have been achieved.