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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Has files: YesSubject: search.filters.subject.SEMICONDUCTOR LASERS

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    ELECTROOPTIC SAMPLING OF OPTOELECTRONICALLY PHASE-LOCKED 10.0 GHZ MICROWAVE SIGNALS USING SEMICONDUCTOR-LASER DIODES
    (1991-08-29)
    WU, HH
    ;
    CHANG, CS
    ;
    PAN, CL
    ;
    光電工程學系
    ;
    電信研究中心
    10.0 GHz microwave signals optoelectronically phase locked by a laser-diode-based GaAs: Cr photoconductive harmonic mixer (lambda = 0.81-mu-m) have been measured noninvasively using the electro-optic sampling technique with a pin-switched InGaAsP laser diode (lambda = 1.3-mu-m).
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    RELIABILITY STUDIES OF 0.85 MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS - 50000-H MTTF AT 25-DEGREES-C
    (1993-10-28)
    WU, CC
    ;
    TAI, K
    ;
    HAUNG, KF
    ;
    電子物理學系
    ;
    電控工程研究所
    Reliability studies of gain-guieded 0.85 mum GaAs/AlGaAs quantum well surface emitting lasers were performed on 45 randomly selected lasers operated at 25, 50 or 90-degrees-C with biased currents up to 15 mA (about four times the threshold values). At 25-degrees-C, no noticeable degradation was seen after 5000 h of operation. A 14% reduction of power was seen at 50-degrees-C after 2700h. A faster degradation on power output was seen at 90-degrees-C, though the lasers are still functional after 1000h. The mean time toward failure (MTTF) of these lasers operated at 25-degrees-C and 15mA is extrapolated to be approximately 5 x 10(4)h.
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    COMPOSITION MODULATION OF INXGA1-XAS QUANTUM-WELLS BY FAST DIMER ARSENIC FLUX CHANGE USING VALVED ARSENIC CRACKER
    (1994-01-01)
    LIU, DC
    ;
    LEE, CP
    ;
    TSAI, KL
    ;
    TSANG, JS
    ;
    CHEN, HR
    By fast change of the As-2 flux using a high temperature valved cracker, we have demonstrated the growth of strained InxGa1-xAs quantum wells with different compositions. The modulation of composition is due to the change in incorporation rates of the group III atoms under different As-2 fluxes. Photoluminescence (PL) emission from the quantum wells clearly indicates the change in composition. A change of In composition from 20.6% to 8.5%, has been achieved by changing the V/III beam-equivalent-pressure (BEP) ratio from 11.7 to 3.9. By this technique of composition modulation, we have fabricated strained InxGa1-xAs/GaAs single quantum well lasers with different emission wavelengths.
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    VERTICAL INTEGRATION OF A GAAS/ALGAAS QUANTUM-WELL LASER AND A LONG-WAVELENGTH QUANTUM-WELL INFRARED PHOTODETECTOR
    (1994-03-03)
    TSANG, JS
    ;
    LEE, CP
    ;
    TSAI, KL
    ;
    CHEN, HR
    ;
    電子工程學系及電子研究所
    A short-wavelength (approximately 0.8mum) GaAs/AlGaAs graded-index separate-confinement heterostructure quantum-well laser has been monolithically integrated with a long-wavelength (approximately 8mum) GaAs/AlGaAs multiple-quantum-well infra-red photodetector on a semi-insulating GaAs substrate by molecular beam epitaxy. The vertical integration method is used and the combined structure is a pinin structure. Both the laser and detector exhibit excellent characteristics. At room temperature, the ridge waveguide laser has an extremely low threshold current of 25 mA and a differential quantum efficiency above 65% with a stripe width of 20mum. The quantum-well detector has a peak response at 8mum and a responsivity of 0.7A/W.