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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 6 of 6
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    Magneto-optical properties of ZnMnTe/ZnSe quantum dots
    (2011-05-15)
    Fan, W. C.
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    Ku, J. T.
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    Chou, W. C.
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    Chen, W. K.
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    Chang, W. H.
    The sigma(+) and sigma(-) circularly polarized time-integrated and time-resolved Photoluminescence (PL) measurements were employed to investigate the carrier spin dynamics of ZnMnTe/ZnSe Quantum Dots (QDs) grown on GaAs substrates by molecular beam epitaxy. The Kohlrausch's stretching exponential function well correlates both the sigma(+) and sigma(-) decay profiles. The measured spin relaxation time is about 23 ns. (C) 2010 Elsevier B.V. All rights reserved.
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    The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxy
    (2013-09-01)
    Tzou, A. J.
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    Chien, K. F.
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    Lai, H. Y.
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    Ku, J. T.
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    Lee, L.
    The growth and optical properties of self-assembled ZnO nanorods grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PA-MBE) were studied. By controlling the Zn/O flux ratio, the growth of ZnO nanorods on Si(111) substrate without catalyst has been achieved. Scanning electron microscopy (SEM) shows the ZnO nanorods with various density and diameter could be controlled. Photoluminescence (PL) measurements exhibit nice optical properties. The sharp near band edge PL emission with full width at half maximum (FWHM) of about 17 meV indicates that the ZnO nanorods could be used as the high efficient photonic devices. Crown Copyright (c) 2013 Published by Elsevier B.V. All rights reserved.
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    Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy
    (2013-09-01)
    Chien, K. F.
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    Hsu, W. L.
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    Tzou, A. J. .
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    Lin, Y. C.
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    Chou, W. C.
    ` The thermal-activated carrier transfer processes in a Zn0.98Cd0.020 thin film grown by plasma-assisted molecular beam epitaxy were investigated using temperature-dependent and time-resolved photoluminescence (PL) spectroscopy. As the temperature increases from 50 to 220 K, the carriers transfer from shallow to deep localized states. Additionally, the carriers escape from the deep localized states above 220 K due to an activation energy of about 19 meV. (c) 2013 Elsevier B.V. All rights reserved.
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    Optical properties of Zn1-xMnxO thin films grown by molecular beam epitaxy
    (2013-09-01)
    Chien, K. F.
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    Yang, Y. L.
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    Tzou, A. J.
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    Chou, W. C.
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    電子物理學系
    Zn(1-x)Mn(x)0 (x=0-0.061) thin films were grown by molecular beam epitaxy (MBE) system. Transmittance shows an increase of the band gap with the increasing Mn concentration. Resonant Raman scattering (RRS) spectra showed 11 longitudinal optical phonon lines for the Zn1-xMnxO samples. For the Zn0.997Mn0.003O sample, circular polarization degree of 9% was observed at magnetic field B=5 T. The dependence of circular polarization rate on the magnetic field intensity exhibits Brillouin type para-magnetism. (c) 2012 Elsevier B.V. All rights reserved.
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    Growth of zinc oxide thin films on Y2O3/Si substrates by chemical vapor deposition
    (2005-02-15)
    Lin, Chih-Wei
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    Cheng, Tsan-Yao
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    Chang, Li
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    Juang, Jenh-Yih
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    電子物理學系
    Epitaxial ZnO was deposited on Si(1 1 1) substrate by atmospheric pressure metal-organic chemical vapor deposition (MOCVD) at 500 degrees C. A Y2O3 buffer layer in epitaxy with Si substrate has successfully suppressed the Si oxidation before ZnO deposition. The Y2O3 film was grown by pulsed laser deposition (PLD) on Si(1 1 1) substrate at 800 degrees C. Also, ZnO was deposited by PLD for comparison with MOCVD. X-ray diffraction and cross-sectional transmission electron microscopy was used to characterize microstructures of the ZnO films and their interfaces with Y2O3. The result shows ZnO(0 0 0 2) parallel to Y2O3(1 1 1). With the increase of the deposition time, the grain morphology of ZnO thin films evolved from flat structure to columnar structure. Most of the columnar ZnO grains are c-axis oriented perpendicular to the interface. (C) 2004 Elsevier B. V. All rights reserved.
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    Influence of Zn/O flux ratio and Mn-doped ZnO buffer on the plasma-assisted molecular beam epitaxy of ZnO on c-plane sapphire
    (2008-10-15)
    Wang, J. S.
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    Yang, C. S.
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    Liou, M. J.
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    Wu, C. X.
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    Chiu, K. C.
    This work investigated the influence of Zn/O flux ratio and Mn-doped ZnO buffer layer on the epitaxial growth of ZnO grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Atomic force microscopy (AFM), photoluminescence (PL) and X-ray diffraction (XRD) measurements indicated that a small amount residual strain of ZnO epilayers was further relaxed under stoichiometric growth conditions due to the better surface migration of the adatoms. Moreover, we observed that a small amount of Mn doping led to obtain a flatter surface with stronger lattice relaxation maybe due to the greatly enhanced surface migration of the adatoms. By adding a Mn-doped ZnO buffer layer the optical and electrical properties of the ZnO epilayers had significant improvement. (c) 2008 Elsevier B.V. All rights reserved.