學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 15

A Comprehensive Study of One-Step Selenization Process for Cu(In1-xGax) Se-2 Thin Film Solar Cells
(2017-03-21)
Chen, Shih-Chen
;
Wang, Sheng-Wen
;
Kuo, Shou-Yi
;
Juang, Jenh-Yih
;
Lee, Po-Tsung
In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn1-xGaxSe2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H2Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe2 layer was also observed. Due to the significant microstructural improvement, the current-voltage (J-V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.
Comparison of nano-structured solar cell anti-reflection coating based on graded-index or mode coupling approach
(2014-11-01)
Lin, Albert
;
Zhong, Yan-Kai
;
Fu, Sze-Ming
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Solar cell nano-structured anti-reflection coatings based on graded index (GI) and mode coupling are all proposed to significantly reduce the reflection from semiconductor-air interface. In this work, it is shown that purely graded index approach can lead to degradation of long wavelength absorption by eliminating quasi-guided mode excitation. The reason is that the physically graded layer not only provides low reflectance path from air to semiconductor, but also from semiconductor to air, leading to photon escape. This results in out-coupling of photons from the semiconductor to air. On the other hand, anti-reflection coating based on mode coupling does not suffer from degraded long wavelength absorption and it is capable of acting as one-way photon pass coating. It is found that the sidewall thickness of mode coupling anti-reflection coating has significant impact on its effectiveness for antireflection, and therefore the selection of process methods is critical for its low reflectance. It is proposed that the purely graded index coating is more suitable for wafer-based photovoltaics where full absorption is possible by two photon traces. The mode coupling coating is suitable for both wafer-based photovoltaics and thin-film photovoltaics since it provides not only low reflectance but also long wavelength quasi-guided mode excitations. In the end, new types of anti-reflection coating and light trapping structure are proposed to further enhance the performance. (C) 2014 Elsevier B.V. All rights reserved.
集光式砷化鎵太陽電池及發電模組的製作
(1999)
李威儀
;
交通大學電子物理系
Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications
(2010-10-01)
Lee, Huang-Ming
;
Sahoo, Kartika Chandra
;
Li, Yiming
;
Wu, Jong-Ching
;
Chang, Edward Yi
We numerically calculate the spectral reflectivity of the silicon nitride (Si(3)N(4)) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si(3)N(4) SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si(3)N(4) SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si(3)N(4) SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings. (C) 2010 Elsevier B.V. All rights reserved.
Morphological study of P3HT:PCBM blend films prepared through solvent annealing for solar cell applications
(2010-12-01)
Chen, Fang-Chung
;
Ko, Chu-Jung
;
Wu, Jyh-Lih
;
Chen, Wei-Chi
;
光電工程學系
We have systematically investigated the morphology of poly(3-hexylthiophene: P3HT) and [6,6]-phenyl C(61)-butyic acid methyl ester (PCBM) blend films prepared through a slow growth apparoch as a function of PCBM loading in the blends for bulk heterojunction solar cells. In addition to the electrical characterisitcs, the molecular ordering and crystallinity of the polymers was examined by using the UV-vis spectroscopy and grazing incidence X-ray diffraction. From the images of confocal laser scan microscopy, we were also able to in-situ monitor the phase separation of the P3HT:PCBM blends during the process of solvent evaporation. Finally, the conductive atomic force microscopy was utilized to probe the spatial distribution of the local current across the photoactive layer prepared with various P3HT:PCBM ratios. From the experimental results, we found that the distribution of PCBM molecules in the P3HT matrix became homogeneous after the solvent annealing process, even though the distribution of the PCBM molecules was not even in the beginning. Therefore, the higher device efficiency could be attributed to the better thin-film morphology of the polymer blends. (C) 2010 Elsevier B.V. All rights reserved.
Synthesis and application of H-Bonded cross-linking polymers containing a conjugated pyridyl H-Acceptor side-chain polymer and various carbazole-based H-Donor dyes bearing symmetrical cyanoacrylic acids for organic solar cells
(2010-12-10)
Sahu, Duryodhan
;
Padhy, Harihara
;
Patra, Dhananjaya
;
Kekuda, Dhananjay
;
Chu, Chih-Wei
A series of novel hydrogen-bonded (H-bonded) cross-linking polymers were generated by complexing various proton-donor (H-donor) solar cell dyes containing 3,6- and 2,7-functionalized electron-donating carbazole cores bearing symmetrical thiophene linkers and cyanoacrylic acid termini with a proton-acceptor (H-acceptor) side-chain homopolymer carrying pyridyl pendants (with 1/2 M ratio of H-donor/H-acceptor). The supramolecular H-bonded structures between H-donor dyes and the H-acceptor side-chain polymer were confirmed by FTIR measurements. The effects of the supramolecular architecture on optical, electrochemical, and organic photovoltaic (OPV) properties were investigated. From DFT (density functional theory) calculations, the optimized geometries of organic dyes reflected that the carbazole cores of H-donor dyes were coplanar with the conjugated thiophenes and cyanoacrylic acids, which is essential for strong conjugations across the donor-acceptor units in D1-D4 dyes. Under 100 mW/cm(2) of AM 1.5 white-light illumination, bulk heterojunction (BHJ) OPV cell devices containing an active layer of H-bonded polymers (PDETP/D1-D4) as an electron donor blended with [6,6]-phenyl C(61)-butyric acid methyl ester (PCBM) as an electron acceptor in a weight ratio of 1:1 were explored. From the preliminary investigations, the OPV device containing 1:1 weight ratio of H-bonded polymer PDFTP/D2 and PCBM showed the best power conversion efficiency (PCE) value of 0.31% with a short-circuit current (J(sc)) of 1.9 mA/cm(2), an open-circuit voltage (V(oc)) of 0.55 V. and a fill factor (FF) of 29%, which has a higher PCE value than the corresponding H-donor D2 dye (PCE = 0.15%) or H-acceptor PDFTP homopolymer (PCE = 0.02%) blended with PCBM in 1:1 weight ratio. (C) 2010 Elsevier Ltd. All rights reserved.
A promising sputtering route for dense Cu2ZnSnS4 absorber films and their photovoltaic performance
(2014-09-01)
Jheng, Bao-Tang
;
Liu, Po-Tsun
;
Wu, Meng-Chyi
;
光電工程學系
;
顯示科技研究所
Copper zinc tin sulfide (Cu2ZnSnS4, CZTS) is highly abundant in nature. It is an important absorber material for the development of low-cost and sustainable next-generation I-2-II-IV-VI4 thin-film solar cells because it has a the tunable direct band gap energy, inexpensive constituent elements, and a large absorption coefficient in the visible wavelength region. This work develops an efficient one-step vacuum-based approach to depositing CZTS films without the need to supply excess sulfur during/after deposition or to perform any post-sulfurization treatment. This one-step RF sputtering process produces CZTS films that are crystalline, phase-pure, dense, smooth, and continuous. Air Mass 1.5 G power conversion efficiencies of as high as 6% have been achieved with an antireflection coating, demonstrating that this new approach has great potential as a low-cost alternative for high-efficiency CZTS solar cell production. (C) 2014 Elsevier B.V. All rights reserved.
Efficiency enhancement of the poly-silicon solar cell using self-assembled dielectric nanoparticles
(2011-08-01)
Huang, C. K.
;
Lin, H. H.
;
Chen, J. Y.
;
Sun, K. W.
;
Chang, W. -L.
In this study, silica nanospheres dispersed in a surfactant solution were spin-coated on commercially available silicon solar cells to form colloidal crystals on the surface. This self-assembled nanoparticle layer served as an anti-reflection (AR) layer for solar cell devices. The self-assembled layer exhibits excellent anti-reflection properties in the UV and NIR wavelength regions, and the reflectance spectra match the theoretical prediction done using the rigorous coupled-wave analysis model. We also showed that the overall conversion efficiency of polycrystalline Si solar cells coated with the silica nanospheres was increased from 11% to 12.3% when using optimized spin-coating parameters and nanoparticle concentrations. (C) 2011 Elsevier B.V. All rights reserved.
Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
(2012-07-01)
Tran, Binh-Tinh
;
Chang, Edward-Yi
;
Trinh, Hai-Dang
;
Lee, Ching-Ting
;
Sahoo, Kartika Chandra
Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V-oc) of 1.52 V and a short-circuit current density (J(sc)) of 8.68 mA/cm(2) with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V-oc and In content in the InxGa1-xN alloys for this type of solar cell was also derived. (C) 2012 Elsevier B.V. All rights reserved.
Improved efficiency for nanopillar array of c-Si photovoltaic by down-conversion and anti-reflection of quantum dots
(2012)
Lin, Chien-Chung
;
Chen, Hsin-Chu
;
Han, Hau-Vei
;
Tsai, Yu-Lin
;
Chang, Chia-Hua
Improvement of efficiency for crystalline silicon (c-Si) with nanopillar arrays (NPAs) solar cell was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by colloidal lithography of self-assembled polystyrene (PS) nanospheres with a 600 nm in size and reactive-ion etching techniques, and then a colloidal CdS QDs with a concentration of 5 mg/mL was spun on the surface of c-Si with NPAs solar cell. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. Additionally, we also found that the device with CdS QDs shows a 32% reduction in electrical resistance, compared with the one without QDs solar cell, under an ultraviolet (UV) light of 355nm illumination. This reduced electrical resistance can directly contribute to our fill-factor (FF) enhancement. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency (EQE) of the device were measured and analyzed. Based on the spectral response and optical measurement, we believe that CdS QDs not only have the capability for photon down-conversion in ultraviolet region, but also provide extra antireflection capability.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results