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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 10 of 14
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    Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
    (2008-12-01)
    Lin, Chao-Cheng
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    Chang, Ting-
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    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Hu, Chih-Wei
    An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.
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    Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
    (2009)
    Lin, Chao-Cheng
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Feng, Li-Wen
    An oxygen-incorporated Mo silicide layer was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge-storage characteristics of Mo nanocrystals influenced by Mo oxide and its surrounding oxide were investigated through X-ray photoelectron spectroscopy and electrical measurement. X-ray photoelectron spectral analyses revealed a redox reaction in the oxygen-incorporated Mo silicide layer after rapid thermal annealing at a critical temperature. The memory window and retention were improved because of the reduction of Mo oxide. Furthermore, the double-layer nanocrystal structure was fabricated through the annealed stacked oxygen incorporated Mo silicide layer. A larger memory window and long retention were found for the double-layer nanocrystal structure. We used an energy band diagram to explain the difference in retention characteristics between single- and double-layer structures.
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    Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
    (2009)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chiang, Cheng-Neng
    ;
    Lin, Chao-Cheng
    In this work, a NiSiGe mixed film was deposited by the cosputtering approach. The rapidly thermal treatment condition was executed at 600 degrees C for 30 s in nitrogen ambient to form the nanocrystal structure. From the results of the transmission electron microscopy, the annealed NiSiGe film reveals a larger nanocrystal size and density distribution than pure NiSi. X-ray photoelectron spectroscopy analyses were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystal formation during the thermal process. Raman spectroscopy and an energy-dispersive spectrometer also exhibit the compositions of nanocrystals including Ni, Si, and Ge elements. With the better formation process, a remarkable improvement of memory effect is observed by comparing with the NiSi and NiSiGe nanocrystal memory devices. Also, the NiSiGe nanocrystal device shows a better retention characteristic due to the lower quantum confinement effect.
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    Growth and Field Emission of Reactive Sputtered Pd-PdO Core-Shell Nanoflakes on Platinum
    (2009)
    Huang, Chien-Jung
    ;
    Pan, Fu-Ming
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    Tzeng, Tai-Cheng
    ;
    Li-Chang
    ;
    Sheu, Jeng-Tzong
    Palladium oxide (PdO) was deposited on platinum by reactive sputter deposition, and the PdO thin film grown on the Pt substrate had a flakelike morphology. The nanosized flake had a core-shell structure with a single Pd grain encapsulated by a crystalline PdO surface layer. The formation of the PdO capped nanoflakes was ascribed to a large interfacial stress due to a lattice mismatch between PdO and Pt. Field emission characteristics of the nanoflakes were studied and a field-enhancement factor of 791 was obtained.
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    Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
    (2009)
    Lin, Chao-Cheng
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Hu, Chih-Wei
    Mo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in SiO(x). Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.
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    Displacement Reaction in Pulse Current Deposition of PtRu for Methanol Electro-Oxidation
    (2009)
    Hsieh, Yu-Chi
    ;
    Wu, Pu-Wei
    ;
    Lu, Yung-Jean
    ;
    Chang, Yun-Min
    ;
    材料科學與工程學系
    Galvanostatic depositions in rectangular pulses and nitrosol precursors were employed to prepare PtRu nanoparticles on carbon clothes in various sizes and compositions. Variables including current on-time (T(on)), current off-time (T(off)), and current density were explored to identify the optimized catalytic performances for methanol electro-oxidation. Electrochemical characterizations including cyclic voltammetry and hydrogen desorption were carried out. Images from a transmission electron microscope on the PtRu nanoparticles revealed a moderate size distribution. Signals from X-ray patterns indicated a slight shift of diffraction peaks, suggesting that the Ru was alloyed successfully in the Pt lattice. In addition, the amount of alloyed Ru was found to decrease with reduced duty cycles. Composition determinations from inductively coupled plasma mass spectrometry and analysis on the oxidation states from X-ray photoelectron spectroscopy suggested a displacement reaction in which the Ru was alternately deposited and dissolved during T(on) and T(off), while the Pt was deposited continuously. As a result, we observed substantial enrichment of Pt in the PtRu nanoparticles when the duty cycle was shortened.
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    Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
    (2009-02-09)
    Lin, Chao-Cheng
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chen, Wei-Ren
    ;
    Hu, Chih-Wei
    We investigated ammonia plasma treatment influence on the nonvolatile memory characteristics of the charge storage layer composed of Mo nanocrystals embedded in nonstoichiometry oxide (SiO(x)). X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window was reduced and the retention and the endurance improved after the treatment. The reduction in the memory window and the improvement in retention were interpreted in terms of the nitrogen passivation of traps in the oxide around Mo nanocrystals. The robust endurance characteristic was attributed the improvement of the quality of the surrounding oxide by nitrogen passivation.
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    NiSiGe nanocrystals for nonvolatile memory devices
    (2009-02-09)
    Hu, Chih-Wei
    ;
    Chang, Ting-
    ;
    Tu, Chun-Hao
    ;
    Chiang, Cheng-Neng
    ;
    Lin, Chao-Cheng
    In this work, charge-storage characteristics of NiSiGe nanocrystal memory device have been studied. Transmission electron microscope shows that the annealed NiSiGe film has higher nanocrystal size and density distribution. Related material analyses such as x-ray photoelectron spectroscopy, Raman spectroscopy, and energy dispersive spectrometer were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystals aggregation during thermal process. With the improved nanocrystal formation process, a remarkable improvement of the memory effect is observed by comparing the NiSi and NiSiGe nanocrystals. In addition, the retention characteristics of the nanocrystals memory devices have been discussed.
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    Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
    (2009-03-09)
    Hu, Chih-Wei
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    Chang, Ting-Chang
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    Tu, Chun-Hao
    ;
    Shueh, Pei-Kun
    ;
    Lin, Chao-Cheng
    Co nanodot memory devices formed by oxidation processes were studied. Transmission electron microscopy and x-ray photoelectron spectroscopy analyses showed that overoxidation of the cobalt and silicon degraded the charge-storage ability seriously. However, a precapped oxide can mildly oxidize the CoSi(2) film to protect the overoxidation to occur. In addition, an oxygen-incorporated CoSi(2) film is proposed to improve the oxidation process further. Through incorporating the limited oxygen during sputtering process, the Co nanodot memory device obtains a larger memory window. Also, the reliability characteristic of the Co nanodot memory device formed by annealing the oxygen-incorporated CoSi(2) film has been demonstrated.
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    Carbon attachment on the aluminum nitride gate dielectric in the pentacene-based organic thin-film transistors
    (2009-03-15)
    Zan, Hsiao-Wen
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    Chou, Cheng-Wei
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    Wang, Chung-Hwa
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    Song, Ho-Tsung
    ;
    Hwang, Jenn-Chang
    This study presents carbon attachment on an aluminum nitride (AlN) gate dielectric to improve the device performance of pentacene-based organic thin-film transistors (OTFTs). This approach produces high OTFT performance on an aged AlN surface. A high mobility of 0.67 cm(2)/V s was achieved on an AlN surface aged for 14 days, compared to a mobility of 0.05 cm(2)/V s on an as-deposited AlN surface. This improvement in device performance is correlated with carbon attachment on the AlN surface, which lowers surface energy. The lowered surface energy made the surface less polar, as measured by a contact angle instrument. The chemical composition of the aged AlN surface was analyzed using x-ray photoelectron spectroscopy before pentacene deposition. Enhanced C=C bonding at 284.5 eV was observed on the aged AlN surface. These enhanced C=C bonds favored the growth of large pentacene islands in the initial growth stage, which may improve OTFT device performance.