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Now showing 1 - 6 of 6
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    Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
    (2001-04-01)
    Lin, HC
    ;
    Yeh, KL
    ;
    Huang, RG
    ;
    Lin, CY
    ;
    Huang, TY
    A novel Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain (FID) extension is proposed and demonstrated. In the new device configuration, a metal field-plate (or sub-gate) lying on the passivation oxide is employed to induce a sheet of carriers in a channel offset region located between the silicided drain and the active channel region underneath the main-gate. The new device thus allows ambipolar device operation by simply switching the polarity of the bias applied to the field plate. In contrast to the conventional SBTFT that suffers from high GIDL (gate-induced drain leakage)-like off-state leakage current, the new SBTFT with FID is essentially free from the GIDL-like leakage current. In addition, unlike the conventional SBTFT that suffers from the low on-off current ratio, the new device exhibits high on/off current ratio up to 10(6) for both n- and p-channel modes of operation. Moreover, the implantless feature and the ambipolar capability of the new device also result in extra low mask count for CMOS processes integration. These excellent device characteristics, coupled with its simple processing, make the new device very promising for future large-area electronic applications.
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    Ambipolar Schottky-barrier TFTs
    (2002-02-01)
    Lin, HC
    ;
    Yeh, KL
    ;
    Huang, TY
    ;
    Huang, RG
    ;
    Sze, SM
    A novel Schottky-barrier metal-oxide-semiconductor thin-film transistor (SBTFT) was successfully demonstrated and characterized. The new SBTFT device features a fleld-induced-drain (FID) region, which is controlled by a metal field-plate lying on top of the passivation oxide. The FED region is sandwiched between the silicided drain and the active channel region. Carrier types and the conductivity of the transistor are controlled by the metal field-plate. The device is thus capable of ambipolar operation. Excellent ambipolar performance with on/off current ratios over 10(6) for both p- and n-channel operations was realized simultaneously on the same device fabricated with polysilicon active layer. Moreover, the off-state leakage current shows very weak dependence on the gate-to-drain voltage difference with the FID structure. Finally, the effects of FED length are explored.
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    Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor
    (2002-06-01)
    Lin, HC
    ;
    Wang, MF
    ;
    Hou, FJ
    ;
    Liu, JT
    ;
    Huang, TY
    A novel Schottky barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) device was proposed and demonstrated, The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Excellent ambipolar performance with a near-ideal sub-threshold slope (similar to 60 mV/decade) and high on-/off-state current ratio (comparable to or higher than 10(9)) is realized, for the first time, on a single device. These encouraging results suggest that the new device may be suitable for some niche applications requiring simple and low-temperature processing of complementary metal-oxide-semiconductor(CMOS)-like devices.
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    High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
    (2003-02-01)
    Lin, HC
    ;
    Wang, MF
    ;
    Hou, FJ
    ;
    Lin, HN
    ;
    Lu, CY
    A simplified and improved Schottky-barrier metal-oxide-semiconductor device featuring a self-aligned offset channel length, PtSi Schottky junction, and reduced oxide thickness underneath the sub-gate was proposed and demonstrated. To alleviate the drawbacks related to the nonself-aligned offset channel length in the original version, a self-aligned offset channel length is achieved in, the new device by forming the silicide source/drain junction self-aligning to the sidewall spacers abutting the gate. This results in not only one mask count saving but also better device performance, as facilitated by, the reduced offset channel length of the self-aligned sidewall spacers. Moreover, the adoption of PtSi for the Schottky junction further improves the on-state current of p-channel operation, while a thinner oxide employed underneath the sub-gate effectively reduces the sub-gate bias needed to form the electrical junction to below 5 V. Significant improvement in on-current as well as leakage current reduction is achieved in the new improved device.
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    Solution-Processed Small-Molecule Bulk Heterojunction Ambipolar Transistors
    (2014-04-01)
    Cheng, Shiau-Shin
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    Huang, Peng-Yi
    ;
    Ramesh, Mohan
    ;
    Chang, Hsiu-Chieh
    ;
    Chen, Li-Ming
    Solution-processed small-molecule bulk heterojunction (BHJ) ambipolar organic thin-film transistors are fabricated based on a combination of [2-phenylbenzo[d,d \']thieno[3,2-b;4,5-b \']dithiophene (P-BTDT) : 2-(4-n-octylphenyl)benzo[d,(d) under bar \']thieno[3,2-b;4,5-b\']dithiophene (OP-BTDT)] and C-60. Treating high electrical performance vacuum-deposited P-BTDT organic semiconductors with a newly developed solution-processed organic semiconductor material, OP-BTDT, in an optimized ratio yields a solution-processed p-channel organic semiconductor blend with carrier mobility as high as 0.65 cm(2) V-1 s(-1). An optimized blending of P-BTDT:OP-BTDT with the n-channel semiconductor, C-60, results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm(2) V-1 s(-1), respectively. Furthermore, a complementary-like inverter composed of two ambipolar thin-film transistors is demonstrated, which achieves a gain of 115.
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    Experimental and theoretical demonstration on the transport properties of fused ring host materials for organic light-emitting diodes
    (2006-01-01)
    Tse, SC
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    So, SK
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    Yeung, MY
    ;
    Lo, CF
    ;
    Wen, SW
    The charge transport properties of three tertiary-butyl (t-Bu) substituted anthracene derivatives (ADN), critical blue host materials for organic light-emitting diodes (OLEDs), have been investigated experimentally and computationally. From time-of-flight (TOF) measurements, all ADN compounds exhibit ambipolar characters. The hole and electron mobilities are in the range (1-5) x 10(-7) cm(2) V-1 s(-1) Under ail external applied field of about 1 MV cm(-1). Un-substituted ADN has the highest carrier mobilities while heavily t-Bu substituted ADN has the least. The electron and hole conducting properties of are consistent with ab initio calculation, which indicates that the frontier orbitals are localized mainly on the anthracene moiety. t-Bu substitutions in ADN increase the hopping path lengths among the molecules and hence reduce the electron and hole mobilities. The results demonstrate that t-Bu substitution is an effective means of engineering the conductivity of organic charge transporter for OLED applications.