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Growth mechanism and properties of the large area well-aligned carbon nano-structures deposited by microwave plasma electron cyclotron resonance chemical vapor deposition
(2002-03-01)
Lin, CH
;
Chang, HL
;
Tsai, MH
;
Kuo, CT
;
材料科學與工程學系
Large area (4-inch diameter) well-aligned carbon nano-structures on Si substrate were successfully synthesized by using a catalyst-assisted microwave plasma electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with CH4 as source gas. The catalysts include Fe, Co and Ni. The catalysts and the deposited nano-structures were characterized by scanning electron microscopy (SEM) transmission electron microscopy (TEM), Raman and field emission I-V measurements. Effects of process parameters on morphologies, structures and properties of the nano-structures were examined. The results show that the deposited nano-structures can include normal nano-tubes, split catalyst nano-tubes, seaweed-like nano-sheets and carbon film, depending mainly on substrate temperature and bias, catalyst materials and their application methods. Deposition mechanisms for different nano-structures, especially, the unique split catalyst nano-tubes and seaweed-like nano-sheets, were proposed. The differences in oxidation resistance and field emission proper-ties between different nano-structures will be compared and discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
Growth of the large area horizontally-aligned carbon nanotubes by ECR-CVD
(2002-12-02)
Hsu, CM
;
Lin, CH
;
Chang, HL
;
Kuo, CT
;
材料科學與工程學系
For potential applications of carbon nanotubes (CNTs) as connectors in microelectronic devices, the process to synthesize the large area horizontally-aligned CNTs on 100 mm (4 inch) Si wafers was developed, using electron cyclotron resonance chemical vapor deposition, with CH, and H, as the source gases and Co as the catalyst. The results show that vertical and horizontal CNTs can be obtained by manipulating the electric field applied on the substrate and flow direction of the gases. In the present deposition conditions, the horizontal CNTs show better field emission properties than vertical CNTs. This may be due to the blocking effect of catalysts at the tips and to the diminishment of the effective emission area from defects of vertical CNTs body. (C) 2002 Elsevier Science B.V. All rights reserved.
Iron and cobalt silicide catalysts-assisted carbon nanostructures on the patterned Si substrates
(2002-12-02)
Chang, HL
;
Lin, CH
;
Kuo, CT
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Catalyst-assisted carbon nanotubes (CNTs) and carbon nano-rods were synthesized on the patterned or un-patterned Si wafer by microwave plasma chemical vapor deposition, using iron or cobalt silicide catalysts. Controllable carbon nanostructures were achieved by manipulating carbon and nitrogen concentration in the source gases, catalyst materials, and patterned wafer application. CNTs were synthesized under a high ratio of CH4/H-2 = 0.1, while carbon nano-rods were synthesized under a low ratio of CH4/H-2=0.01. Introducing N-2 gas into CH4/H-2 source gases gives rise to bamboo-like CNTs formation. Selective CNTs depositions were applied on (a) parallel Fe-coated line arrays, (b) CoSix-coated hole arrays. This is a novel method that is compatible with Si microelectronic device manufacturing. The field emission results indicate that the emission current density can be above 1 mA/cm(2) at 3.97 V/mum, and hollow like CNTs belong to better emission current than bamboo-like CNTs. Growth models of different carbon nanostructures are proposed. (C) 2002 Elsevier Science B.V. All rights reserved.
Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane
(2003-07-01)
Chiang, CC
;
Chen, MC
;
Ko, CC
;
Wu, ZC
;
Jang, SM
This work investigates the thermal stability and physical and barrier properties of two species of plasma-enhanced chemical vapor deposited (PECVD) alpha-SiC:H silicon carbide films (with k-values less than 5) deposited using trimethylsilane, (CH3)(3)SiH (3MS) and tetramethylsilane, (CH3)(4)Si (4MS) organosilicate gases. It is found that the 4MS alpha-SiC:H film contains a higher content of carbon and has a lower dielectric constant. Both of the 3MS and 4MS alpha-SiC:H films are thermally stable at temperatures up to 500degreesC. However, degraded barrier property and moisture resistance were observed for the 4MS alpha-SiC:H film; this is attributed to the porosity enrichment caused by the film's high carbon content. The 3MS alpha-SiC:H film, which exhibits a superior Cu-barrier property, is a potential candidate for replacing the higher dielectric constant Si3N4 film as a Cu-cap barrier and etching stop layer in the Cu damascene structure.
Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H films
(2003-07-01)
Chiang, CC
;
Wu, ZC
;
Wu, WH
;
Chen, MC
;
Ko, CC
In this work, we investigate the thermal stability and physical and barrier properties of three species of plasma enhanced chemical vapor deposition (PECVD) alpha-SiC:N:H silicon carbide films with different carbon and nitrogen contents and dielectric constants less than a value of 5.5. For comparison, one species of alpha-SiN:H film with a k value of 7.2 is also studied. It is found that the dielectric constant decreases with increasing content of carbon and decreasing content of nitrogen in the alpha-SiC:N:H film. All of the three species of alpha-SiC:N:H and the one species of alpha-SiN:H films are thermally stable at temperatures up to 500degreesC. However, degraded barrier capability and moisture resistance were observed for the alpha-SiC:N:H film with a k value of 3.5, which has a C/Si atomic ratio of 0.875. This is presumably due to the poorly crosslinked molecular structure and porosity enhancement caused by the abundant amount of carbon in the alphaSiC:N:H film.
Catalyzed growth model of carbon nanotubes by microwave plasma chemical vapor deposition using CH4 and CO2 gas mixtures
(2003-10-01)
Chen, M
;
Chen, CM
;
Koo, HS
;
Chen, CF
;
材料科學與工程學系
Catalyst growth carbon nanotubes (CNTs) have been synthesized successfully by microwave plasma chemical vapor deposition using CH4-CO2 gas sources, and Fe, Ti, Fe/Ti as catalysts. Significant difference of morphology in the carbon deposition was observed between Fe and Ti catalyst. By adjusting growth parameters of CH4 to CO2, a high yield of vertically aligned CNTs can be found in an Fe-deposited substrate. Ti is shown to be not suitable as a catalyst in CNT production. In the present work, we investigated the effect of H-2 plasma pretreatment on the CNT growth from the viewpoint of catalyst morphology, using Fe as the catalyst. After the H-2 pretreatment, significant catalyst particle sintering was observed and resulted in a broad size distribution of catalyst particles. The diameter of CNTs was governed by the catalyst particle size. The diameter of CNTs thus increased as the H-2 plasma pretreated time increased. The CNT diameters were distributed in the range approximately 10-20 nm when Fe-deposited substrate was not pretreated. However, the diameter of CNTs increased from 30 to 300 nm when Fe-deposited substrate was pretreated from 1 to 15 min. The CNT growth model in catalysts, as a function of a gas environment of CH4-CO2 gas mixture, was investigated. (C) 2003 Elsevier Science B.V. All rights reserved.
Field emission properties of vertically aligned carbon nanotubes grown on bias-enhanced hydrogen plasma-pretreated Cr film
(2003-11-01)
Chen, CF
;
Lin, CL
;
Wang, CM
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Using CH4/H-2 source gases, vertically aligned carbon nanotubes were grown on a Cr film by microwave plasma chemical vapor deposition. The Cr film on a silicon wafer had a constant thickness of 100 nm, and bias-enhanced H, plasma pre-treatment was performed for various periods to modify the surface of the Cr film. Bias voltage of - 150 V was applied during both pre-treatment and growth steps, the resultant carbon nanotubes on a Cr film, which had been pretreated in bias-enhanced H-2 plasma for 5 min were vertically aligned. The field emission properties of the resultant carbon nanotubes included an emission current of 0.305 mA at 2 V/mum; and a turn-on field of 1.7 V/mum. (C) 2003 Elsevier B.V. All rights reserved.
Root growth of multi-wall carbon nanotubes by MPCVD
(2005-01-03)
Hsu, CM
;
Lin, CH
;
Lai, HJ
;
Kuo, CT
;
材料科學與工程學系
This work examines the relationships among the growth and interlayer reactions of carbon nanotubes (CNTs) to develop an effective process for controlling the nanostructure, orientation and characteristics of CNTs. Vertically oriented CNTs were successfully synthesized by microwave plasma chemical vapor deposition (MPCVD) with CH4/H-2 as source gases. Additionally, the Ti and SiO2 barrier layers and the Co catalyst were used in an experiment on the growth of CNTs on the Si wafer. Then, the SiO2 barrier layer was deposited by low-pressure chemical vapor deposition (LPCVD). The Ti barrier layer and Co catalyst films were deposited on the Si wafer by physical vapor deposition (PVD). The deposited nanostructures were characterized by scanning and transmission electron microscopy, the results of which reveal that the deposited MWCNTs were grown under the influence of a catalyst on Si substrates with or without a barrier layer, by MPCVD. Vertically gown, dense MWCNTs attached to a catalytic film demonstrate that various MWCNTs penetrated the root particles. The diameter of the root particles, of approximately in the order of 100 nm, is larger than those of the tube, 10-15 nm. The well-known model of the growth of CNTs includes base- and tip-root growth. The interaction between the catalytic film and the supporting barrier layer is suggested to determine whether the catalytic particles are driven up or pinned down on the substrate during the growth. (C) 2004 Elsevier B.V. All rights reserved.
Graphitic carbon film formation under Ni templates by radio-frequency sputtering for transparent electrode applications
(2011-11-01)
Lin, Meng-Yu
;
Sheng, Yung-Shuan
;
Chen, Shu-Han
;
Su, Ching-Yuan
;
Li, Lain-Jong
An alternate approach to the preparation of transfer-free graphitic carbon films is proposed in this paper. Using a standard radio-frequency sputtering system and a high-temperature annealing procedure, graphitic carbon films are prepared under Ni templates. The results demonstrate that carbon precipitation occurs at both Ni template interfaces. With repeated annealing procedures at 1100 degrees C, a sheet resistance of 1.36 x 10(4) Omega/square can be achieved. Selective carbon film deposition has also been developed via pattern formation on the Ni templates. The results indicate the potential application of this method to transparent electrode formation. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3646481]
Displacement Reaction in Pulse Current Deposition of PtRu for Methanol Electro-Oxidation
(2009)
Hsieh, Yu-Chi
;
Wu, Pu-Wei
;
Lu, Yung-Jean
;
Chang, Yun-Min
;
材料科學與工程學系
Galvanostatic depositions in rectangular pulses and nitrosol precursors were employed to prepare PtRu nanoparticles on carbon clothes in various sizes and compositions. Variables including current on-time (T(on)), current off-time (T(off)), and current density were explored to identify the optimized catalytic performances for methanol electro-oxidation. Electrochemical characterizations including cyclic voltammetry and hydrogen desorption were carried out. Images from a transmission electron microscope on the PtRu nanoparticles revealed a moderate size distribution. Signals from X-ray patterns indicated a slight shift of diffraction peaks, suggesting that the Ru was alloyed successfully in the Pt lattice. In addition, the amount of alloyed Ru was found to decrease with reduced duty cycles. Composition determinations from inductively coupled plasma mass spectrometry and analysis on the oxidation states from X-ray photoelectron spectroscopy suggested a displacement reaction in which the Ru was alternately deposited and dissolved during T(on) and T(off), while the Pt was deposited continuously. As a result, we observed substantial enrichment of Pt in the PtRu nanoparticles when the duty cycle was shortened.

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