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    Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect
    (1998-12-14)
    Chuang, JC
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
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    Effects of BF2+ implantation on the oxidation resistance of copper films
    (1999-06-01)
    Wu, ZC
    ;
    Liu, YL
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This work investigates the effects of BF2+ implantation on the oxidation resistance of copper films. The BF2+ ions were implanted into Cu films through a 1000 Angstrom thick screen SiO2 layer. We found that the oxidation resistance of Cu films can be significantly improved by BF2+ implantation at appropriate conditions. In particular, BF2+ implantation at 35 to 40 keV to a dose of 1 - 8 x 10(14) cm(-2) made the Cu films capable of resisting oxidation at temperatures up to 250 degrees C. At these BF2+ implantation energies, boron atoms of peak concentration were projected near the Cu surface; thus the diffusion paths of oxidizing species were efficiently blocked. Implantation at too high energy would result in greater depth of projection, thus a lower concentration of boron at the Cu surface; moreover, it generally leads to increased implantation defects that might serve as diffusion paths for the oxidation species. On the other hand, too high dosage implantation would also have an adverse effect on the capability of oxidation resistance for Cu films owing to the higher density of implantation damage as well as the formation of reactive fluorine compound (CuF2) near the Cu surface. (C) 1999 Elsevier Science S.A. All rights reserved.
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    Copper chemical vapor deposition films deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilane
    (1999-08-01)
    Lin, PJ
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Copper chemical vapor deposition (Cu CVD) from Cu(hfac)vinyltrimethylsilane was studied using a low pressure chemical vapor deposition (LPCVD) system of a cold-wall vertical reactor. It was found that the resistivity of the chemical vapor deposited Cu films,was dependent on the film's microstructure and impurity content, which in turn. were dependent on the deposition conditions. Using H-2 as the carrier gas, we were able to deposit Cu films of low impurity content at deposition rates as high as 150 Angstrom/min. The lowest resistivity Cu films can be deposited at a temperature of 180 degrees C and a pressure of 300 mTorr.
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    Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
    (1999-10-15)
    Hu, TC
    ;
    Chiu, SY
    ;
    Dai, BT
    ;
    Tsai, MS
    ;
    Tung, IC
    A novel inhibitor, citric acid, was introduced in the HNO3-based slurry for copper chemical mechanical polishing. It was anticipated that a passivation layer could be formed on the copper surface in the presence of citric acid. In a 3 vol.% HNO3 solution, the passivation effect derived from citric acid saturated as the citric acid concentration reached ca. 0.01 M. The polishing rate was found to decrease with the addition of citric acid. The results showed that the HNO3-based slurry with citric acid as an inhibitor could achieve good surface planarity for copper chemical mechanical polishing. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
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    Passivation of copper films with magnesium doping using recoil ion implantation
    (2000-01-10)
    Wu, ZC
    ;
    Liu, YL
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This work investigates the effects of Ar+ ion implantation through a multilayer structure of SiO2(100 nm)/Mg(20 nm)/Cu/SiO2/Si on the oxidation resistance of Cu films. Experimental results indicate that implantation at 130 keV to a dose of 5 X 10(15) cm(-2) significantly enhances the oxidation resistance at temperatures up to 375 degrees C. At this energy, a small number of Mg atoms are knocked out, leading to formation of an impervious MgO barrier layer on the Cu surface, which effectively suppresses the oxidizing diffusion paths. (C) 2000 Elsevier Science S.A. All rights reserved.
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    Electrical properties of Ta2O5 thin films deposited on Cu
    (2000-02-01)
    Ezhilvalavan, S
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The electrical and dielectric properties of reactively sputtered Ta2O5 thin films with Cu as the top and bottom electrodes forming a simple metal insulator metal (MIM) structure, Cu/Ta2O5/Cu/n-Si, were studied. Ta2O5 films subjected to rapid thermal annealing (RTA) at 800 degrees C for 30 s in N-2 ambient crystallized the film, decreased the leakage current density and resulted in reliable time-dependent dielectric breakdown characteristics. The conduction mechanism at low electric fields (<100 kV/cm) is due to Ohmic conduction; however, the Schottky mechanism becomes predominant at high fields (>100 kV/cm). Present studies demonstrate the use of Cu as a potential electrode material to replace the conventional precious metal electrodes for Ta2O5 storage capacitors. (C) 2000 Elsevier Science S.A. All rights reserved.
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    Effects of NH3-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects
    (2000-09-01)
    Liu, PT
    ;
    Chang, TC
    ;
    Yang, YL
    ;
    Cheng, YF
    ;
    Sze, SM
    The interaction between topper interconnects and low-k hydrogen silsesquioxane! (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and NH3 plasma post-treatment. Owing to serious diffusion of copper atoms in HSQ film, degradations of the dielectric properties are significant with the increase of thermal stress, The leakage current behavior in high field conduction is well explained by the Poole-Frenkel (P-F) mechanism. By applying NH3-plasma treatment to the HSQ film, however, the leakage current is decreased and P-F conduction can be significantly suppressed. In addition, the phenomenon of serious Cu penetration is not observed by means of electrical characteristic measurements and secondary ion mass spectroscopy (SIMS) analysis even in the absence of diffusion barrier layers. This indicates the copper diffusion in low-k HSQ film can be effectively blocked by NH3 plasma post-treatment.
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    Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodes
    (2001-01-01)
    Yang, WL
    ;
    Wu, WF
    ;
    Liu, DG
    ;
    Wu, CC
    ;
    Ou, KL
    This paper investigates the barrier capability of tantalum nitride (TaNx) layers against Cu diffusion. The TaNx layers were reactively sputtered in contact holes to a thickness of 50 nm by using a different nitrogen flow rate. Results indicate that the TaNx layers fail to be a diffusion barrier due to a relative high resistivity for nitrogen flow ratios exceeding 10%. in addition, we found that the phase of alpha -Ta(-N) functions as an effective barrier against Cu diffusion and that Cu/TaN(3-5%)/n(+)-p junction diodes are able to sustain a 30 min furnace anneal up to 500 degreesC without causing degradation of the electrical characteristics. The high-temperature failure of barrier capability for the TaNx layers is due to interdiffusion of Cu and Si across the TaNx film structure to form Cu3Si. The surface roughness and the film structure of TaNx layers determine the ability of Cu and Si interdiffusion. (C) 2001 Elsevier Science Ltd. All rights reserved.
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    Angular distribution of electrons elastically backscattered from amorphous overlayer systems
    (2001-02-10)
    Kwei, CM
    ;
    Tsai, SS
    ;
    Tung, CJ
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Monte Carlo calculations have been performed of the angular distribution of electrons elastically backscattered from amorphous overlayer systems composed of thin copper films and semi-infinite silicon substrates. These calculations showed that the angular distribution of the elastically reflected intensity was dependent on film thickness and electron energy. They also showed that elastically backscattered electrons were due substantially to one, two and three scatterings with single-scattering events contributing about half of the intensity. Based on these findings, we have derived a formula for the contribution from single-scattering events to the angular distribution of the elastically reflected intensity. Combining this formula and the Pi-approximation for multiple scattering, we were able to construct an analytic formula for the angular distribution of electrons elastically backscattered from overlayer systems. Results from this approach were in good agreement with those computed using Monte Carlo simulations. (C) 2001 Elsevier Science B.V, All rights reserved.
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    Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric
    (2001-06-01)
    Wu, ZC
    ;
    Chiang, CC
    ;
    Wu, WH
    ;
    Chen, MC
    ;
    Jeng, SM
    This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD), The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL), In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG, An appropriate ESL of sufficient thickness is essential to reduce the leakage through the ESL if an ESL is used in the Cu damascene integration scheme.