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Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
(2000-08-15)
Ezhilvalavan, S
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper reviews the recent developments of (Ba,Sr)TiO3 (BST) thin films for future Gbit era dynamic random access memory (DRAM) applications. The trends of DRAM capacitors in the last decade are briefly described first. Then the technological aspects of BST films such as deposition techniques, post-annealing, physical, electrical and dielectric characteristics of the films, effects of electrode materials, dielectric relaxation and defect analysis and the reliability phenomena associated with the films are briefly reviewed with specific examples from recent literature. The basic mechanisms that control the bulk electrical conduction and the origin of leakage currents in BST films are also discussed. Finally, possible developments of gigabit era DRAM technology are summarized. (C) 2000 Elsevier Science S.A. All rights reserved.
Sol-gel derived (Ba0.5Sr0.5)TiO3 thin films and their electrical and dielectric properties
(2001)
Nayak, M
;
Lee, SY
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Barium strontium titanate thin films with composition (Ba0.5Sr0.5)TiO3 were prepared by a sot-gel method using hydroxide-alkoxide precursors. Reasonably well-crystallized film was obtained at a temperature as low as 500 degreesC. The leakage current characteristics and dielectric constant of the films varied with the annealing temperature due to the change in microstructure. The electrical and dielectric properties of the films showed strong dependence on the precursor solution concentration. Dielectric response of the films prepared from dilute solution is superior to that prepared from the concentrated solution. The change in electrical and dielectric characteristics of the films has been correlated to their microstructure, which revealed that the concentration change affected the grain size distribution, film porosity and morphology.
Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment
(2001-11-01)
Chang, TC
;
Mor, YS
;
Liu, PT
;
Tsai, TM
;
Chen, CW
The organic silsesquioxane, methylsilsesquioxane (MSQ), exhibits a low dielectric constant because of its lower film density compared with thermal oxide. In this study, boron implantation treatment is investigated in order to improve the quality of MSQ. The small size of boron atoms do not damage the chemical bonding of the MSQ film. In addition, the formation of densified surfaces after boron implantation can reduce the probability of moisture uptake into the MSQ. Therefore, the leakage current of MSQ film is significantly decreased and the low-k properties of MSQ film can be maintained. (C) 2001 Elsevier Science B.V. All rights reserved.
High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
(2002-04-01)
Chen, SB
;
Lai, CH
;
Chin, A
;
Hsieh, JC
;
Liu, J
We have investigated the electrical characteristics of Al2O3 and AlTiOx MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiOx MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.
Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
(2002-04-01)
Chen, SB
;
Lai, CH
;
Chan, KT
;
Chin, A
;
Hsieh, JC
We have characterized the capacitance and loss tangent for high-k Al2O3 and AlTiOx gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO2 was demonstrated individually by the proposed Al2O3 and AlTiOx gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO2 from 100 KHz to 20 GHz. These results suggest that both Al2O3 and AlTiOx are suitable for next generation MOSFET application into RF frequency regime.
Characterization of porous silicate for ultra-low k dielectric application
(2002-07-01)
Liu, PT
;
Chang, TC
;
Hsu, KC
;
Tseng, TY
;
Chen, LM
Thermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500 degreesC for I h. A series of material analysis techniques and electrical characteristics have been used to verify the physical and chemical characteristics of the porous silicate film. (C) 2002 Elsevier Science B.V. All rights reserved.
Effects of ammonia plasma treatment on the electrical properties of plasma-enhanced chemical vapor deposition amorphous hydrogenated silicon carbide films
(2002-09-01)
Li, YW
;
Chen, CF
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Amorphous hydrogenated silicon carbide (a-SiC:H) films were deposited from a mixture of silane and methane gases using the plasma-enhanced chemical vapor deposition (PECVD) process. The properties of the film. following ammonia plasma treatment, are reported. A lower silane flow rate reduces the refractive index, but increases the carbon content and the optical band gap. Increasing the carbon concentration of the a-SiC:H films reduces the dielectric constant. The films were treated with ammonia plasma for various treatment periods. The original Film has a smooth surface with a roughness of 0.231 nm but increasing the ammonia plasma treatment period gradually roughens the surface. The chemical bonding nature of the a-SIC:H films with higher silicon content was investigated by X-ray photoelectron spectro.scop, Various nitrogen ioni/ation species reacted with Si to promote the formation of silicon nitride. As a result, although the dielectric constant of the a-SiC:H films, increased slightly, the leakage current density declined as the ammonia plasma treatment time increased.
Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
(2003-02-17)
Sun, CL
;
Chen, SY
;
Yang, MY
;
Chin, A
;
材料科學與工程學系
Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
High-density MIM canpacitors using AlTaOx dielectrics
(2003-05-01)
Yang, MY
;
Huang, CH
;
Chin, A
;
Zhu, CX
;
Li, MF
The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
(2003-10-01)
Yang, MY
;
Huang, CH
;
Chin, A
;
Zhu, CX
;
Cho, BJ
Using high-kappa, Al2O3 doped Ta2O5 dielectric, we have obtained record high MINI capacitance density of 17 fF/mum(2) at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 x 10(-7) A/cm(2). In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 x 10(-12) A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-mum MOSFET. This very high capacitance density with good MINI capacitor characteristics can significantly reduce the chip size of RF ICs.

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