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Luminous efficiency enhancement of white light-emitting diodes by using a hybrid phosphor structure
(2015-02-19)
Lin, Bing-Cheng
;
Huang, Jhih-Kai
;
Chen, Kuo-Ju
;
Chiu, Sheng-Huan
;
Tu, Zong-Yi
This paper presents a "hybrid" structure for the coating of yellow YAG: Ce3(+) phosphor on blue GaN-based light-emitting diodes (LEDs). The luminous efficiency of the hybrid phosphor structure improved by 5.9% and 11.7%, compared with the conventional remote and conformal phosphor structures, respectively, because of the increased intensity of the yellow component. The hybrid structure also has an advantage in the phosphor usage reduction for the LEDs. Furthermore, the electric intensity of the hybrid phosphor structure was calculated for various thicknesses by conducting TFCalc32 simulation, and the enhanced utilization of blue rays was verified. Finally, the experimental results were consistent with the simulation results performed using the Monte-Carlo method. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Efficiency droop behavior improvement through barrier thickness modification for GaN-on-silicon light-emitting diodes
(2015-03-05)
Tzou, An-Jye
;
Lin, Bing-Cheng
;
Lee, Chia-Yu
;
Lin, Da-Wei
;
Liao, Yu-Kuang
Crack-free GaN-based light-emitting diodes (LEDs) were grown on 150-mm-diameter Si substrates by using low-pressure metal-organic chemical vapor deposition. The relationship between the LED devices and the thickness of quantum barriers (QBs) was investigated. The crystal quality and surface cracking of GaN-on-Si were greatly improved by an AlxGa1-xN buffer layer composed of graded Al. The threading dislocation density of the GaN-on-Si LEDs was reduced to < 7 x 10(8) cm(-2), yielding LEDs with high internal quantum efficiency. Simulation results indicated that reducing the QB thickness improved the carrier injection rate and distribution, thereby improving the droop behavior of the LEDs. LEDs featuring 6-nm-thick QBs exhibited the lowest droop behavior. However, the experimental results showed an unanticipated phenomenon, namely that the peak external quantum efficiency (EQE) and light output power (LOP) gradually decreased with a decreasing QB thickness. In other words, the GaN-on-Si LEDs with 8-nm-thick QBs exhibited low droop behavior and yielded a good peak EQE and LOP, achieving a 22.9% efficiency droop and 54.6% EQE. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer
(2003-10-01)
Chen, LC
;
Hsu, CY
;
Lan, WH
;
Teng, SY
;
材料科學與工程學系
Ni/AuBe as p-type ohmic contact to p-GaN in the heat treatment process are reported. By selection of an optimum condition, the best construction of Ni/AuBe bi-layers is 5 nm/5 nm thick. The light-transmission is about 75% for 470 nm blue light and the lowest specific contact resistance obtained is 2 x 10(-3) Omega cm(2) examined by transmission line model after heat treatment process at 500 degreesC alloying temperature during 10 min in nitrogen ambient. The Be atom may plays an important role in the formation of good ohmic contacts. On the other hand, Ni/AuBe bi-layers are also applied to GaN-based light-emitting diodes (LEDs) as p-type ohmic contact electrode. The typical I-V characteristics of the GaN-based LEDs with 5 nm/5 nm-thick Ni/AuBe TCL exhibit a forward-bias voltage of 3.41 V at injection Current of 20 mA. (C) 2003 Elsevier Ltd. All rights reserved.
Enhanced Luminous Efficiency of WLEDs Using a Dual-Layer Structure of the Remote Phosphor Package
(2013-06-15)
Chen, Kuo-Ju
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Chen, Hsin-Chu
;
Shih, Min-Hsiung
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Wang, Chao-Hsun
;
Tsai, Hsin-Han
This study demonstrates how the insertion of a thin silicone layer into a dual-layer remote phosphor structure enhances light extraction in white light-emitting diodes (WLEDs). In the experiment, a dual-layer phosphor structure yielded a higher intensity of blue and yellow components than a conventional structure. Moreover, the lumen flux was 5% higher than a conventional remote phosphor package at the same correlated color temperature (CCT). Using a TFCalc32 simulation, the electric field intensity was calculated for different thicknesses of the dual-layer remote phosphor structures, and the enhanced use of blue rays was verified. Additionally, the dual-layer structure reduces chromaticity deviations as the driving current increases.
Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes
(2011-08-01)
Wang, C. H.
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Lin, D. W.
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Lee, C. Y.
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Tsai, M. A.
;
Chen, G. L.
The efficiency and electrical characteristics of GaN-based high-voltage light-emitting diodes (HV-LEDs) are investigated in detail. The spatial distribution of light output and simulation results showed that 100-V HV-LED with smaller microchips had superior current spreading. As a result, under 1-W operation, the luminous efficiency of 100-V HV-LED with smaller microchips was enhanced by 7.8% compared to that of 50-V HV-LED, while the efficiency droop behaviors were reduced from 28% in 50-V HV-LED to 25.8% in 100-V HV-LED. Moreover, smaller microchips exhibited lower series resistance and forward voltage, leading to higher wall-plug efficiency.
Resonant-Enhanced Full-Color Emission of Quantum-Dot-Based Display Technology Using a Pulsed Spray Method
(2012-12-19)
Chen, Kuo-Ju
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Chen, Hsin-Chu
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Tsai, Kai-An
;
Lin, Chien-Chung
;
Tsai, Hsin-Han
Colloidal quantum-dot light-emitting diodes (QDLEDs) with the HfO2/SiO2-distributed Bragg reflector (DBR) structure are fabricated using a pulsed spray coating method. Pixelated RGB arrays, 2-in. wafer-scale white light emission, and an integrated small footprint white light device are demonstrated. The experimental results show that the intensity of red, green, and blue (RGB) emission exhibited considerable enhancement because of the high reflectivity in the UV region by the DBR structure, which subsequently increases the use in the UV optical pumping of RGB QDs. A pulsed spray coating method is crucial in providing uniform RGB layers, and the polydimethylsiloxane (PDMS) film is used as the interface layer between each RGB color to avoid cross-contamination and self-assembly of QDs. Furthermore, the chromaticity coordinates of QDLEDs with the DBR structure remain constant under various pumping powers in the large area sample, whereas a larger shift toward high color temperatures is observed in the integrated device. The resulting color gamut of the proposed QDLEDs covers an area 1.2 times larger than that of the NTSC standard, which is favorable for the next generation of high-quality display technology.
Light-emitting diodes on curved ceramic substrate with primary optics for modification of luminous intensity
(2012-04-20)
Wei, An-Chi
;
Sze, Jyh-Rou
;
Chern, Jyh-Long
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光電工程學系
;
Department of Photonics
Unlike the conventional light-emitting diode (LED) luminaire with a planar substrate and only the forward emission, the proposed LED luminaire with a curved ceramic substrate can perform both the forward and the backward emissions and inherits the merits of good heat-dissipation and low cost from the ceramic substrate. Assembled with the proper primary optics, an illustrated LED bulb has been designed, fabricated and measured. The measured luminous intensity of the LED bulb has shown the backward emission and designed distribution with the beam-angle of 133 deg. To broaden the application areas, such a LED bulb on a curved substrate has been modularized as a streetlight. The measured results of the proposed streetlight have shown that the beam angle of the luminous intensity and the luminaire efficiency are 132 deg and 86%, respectively. Meanwhile, its luminous characteristics also fit the Chinese standard for lighting design of urban roads. (c) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JPE.2.026501]
Planar Lighting by Blue LEDs Array with Remote Phosphor
(2010)
Tien, Chung-Hao
;
Hung, Chien-Hsiang
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Xiao, Bo-Wen
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Huang, Hsin-Tao
;
Huang, Yi-Pai
A novel direct-emitting LED backlit for LCDs was demonstrated. Unlike the conventional white LED schemes for display applications, proposed blue light excited planar lighting (BLPL) exploits blue LED chip to remotely excite the YAG-phosphor film and thus render a uniform planar source, where the YAG-phosphor acts as the diffuser film and wavelength down converter simultaneously. Based on the diffusing characterization of YAG-phosphor layer, we examined the optical properties of the BLPL system in viewpoints of uniformity, luminance and mixing capability. Consequently, a prototype 10-mm-thickness BLPL module was demonstrated with 86% uniformity and 9800 nits without using any diffuser film or light guiding plate.
Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates
(2012-07-15)
Chiu, Ching-Hsueh
;
Hsu, Lung-Hsing
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Lee, Chia-Yu
;
Lin, Chien-Chung
;
Lin, Bo-Wen
In this letter, we report the high performance GaN-based light-emitting diodes (LEDs) with embedded air void array grown by metal-organic chemical vapor deposition. The donut-shaped air void was formed at the interface between crown-shaped patterned sapphire substrates (CPSS) and the GaN epilayer by conventional photolithography. The transmission electron microscopy images demonstrate that the threading dislocations were significantly suppressed by epitaxial lateral overgrowth (ELOG). The Monte Carlo ray-tracing simulation reveals that the light extraction of the air-voids embedded LED was dramatically increased due to a strong light reflection and redirection by the air voids.
A New Supramolecular Hole Injection/Transport Material on Conducting Polymer for Application in Light-Emitting Diodes
(2012-04-10)
Chu, Yu-Lin
;
Cheng, Chih-Chia
;
Yen, Ying-Chieh
;
Chang, Feng-Chih
;
應用化學系

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