<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

20041

Settings

🏛️國立陽明交通大學機構典藏

Has files: YesSubject: search.filters.subject.low noise

Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Item type:Item,
    Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applications
    (2004-07-01)
    Chang, EY
    ;
    Lin, YC
    ;
    Chen, GJ
    ;
    Lee, HM
    ;
    Huang, GW
    A metamorphic high-electron-mobility transistor (MHEMT) with In0.55Ga0.45As/In0.67Ga0.33As/In0.55Ga0.45As composite channel layers was developed for low-noise and high-linearity applications. The use of: a composite channel results in high electron mobility and good confinement of electrons in the channel region which are the desired characteristics of low-noise and high-linearity devices. The noise figure of the 0.25 x 160 mum(2) devices is 0.23 dB with 15.06 dB associated gain, and the output third-order intercept point (IP3) is 18.67 dBm at 6 GHz. The device shows great potential for high-linearity and low-noise applications at high frequencies.