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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier
    (2001-06-01)
    Chen, CY
    ;
    Chang, EY
    ;
    Chang, L
    ;
    Chen, SH
    ;
    材料科學與工程學系
    Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier was studied. A thin TaN layer of 40 nm was sputtered on the GaAs substrate before copper firm metallization. As judged from the data of X-ray diffraction (XRD), Anger electron spectroscopy (AES), and cross-sectional transmission electron microscopy (TEM), the Cu/TaN films with GaAs were very stable without interfacial interaction up to 550 OC annealing, The copper metallized MESFETs were thermally stressed at 300 degreesC, The devices showed very little change in the device characteristics (<3 %) after thermal stress, and the changes of the electrical parameters and RF characteristics of the devices after thermal stress were of the same order as those devices without Cu metallization, These results show that TaN is a good diffusion barrier for Cu in GaAs devices and the Cu/TaN films can be used for the backside copper metallization of GaAs MESFETs.
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    Use of WNX as the diffusion barrier for interconnect copper metallization of InGaP-GaAs HBTs
    (2004-07-01)
    Chang, SW
    ;
    Chang, EY
    ;
    Lee, CS
    ;
    Chen, KS
    ;
    Tseng, CW
    Use of WNX as the diffusion barrier for interconnect copper metallization of InGaP-GaAs heterojunction bipolar transistors (HBTs) was studied. The WNX (40 nm) and Cu (400 nm) films were deposited sequentially on the InGaP-GaAs HBT wafers as the diffusion barrier and interconnect metallization layer, respectively, using the sputtering method. As judged from the data of scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy, and sheet resistance, the Cu-WNX-SiN and Cu-WNX-Au structures were very stable up to 550 degreesC and 400 degreesC annealing, respectively. Current accelerated stress test was conducted on the Cu-WNX metallized HBTs with V-CE = 2 V, J(C) = 140 kA/cm(2) and stressed for 55 h, the current gain (beta) of these HBTs showed no degradation and was still higher than 100 after the stress test. The Cu-WNX metallized HBTs were also thermally annealed at 250 degreesC for 25 h and showed no degradation in the device characteristics after the annealing. For comparison, HBTs with An interconnect metallization were also processed, and these two kinds of devices showed similar characteristics after the stress tests. From these results, it is demonstrated that WNX is a good diffusion barrier for the interconnection copper metallization of GaAs HBTs.
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    A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier
    (2005)
    Chang, SW
    ;
    Chang, EY
    ;
    Lee, CS
    ;
    Chen, KS
    ;
    Tseng, CW
    A gold-free, fully Cu-metallized InP heterojunction bipolar transistor using non-alloyed Ti/Pt/Cu and Pt/Ti/Pt/Cu ohmic contacts and platinum diffusion barrier has been successfully fabricated. The InGaAs/Ti/Pt/Cu ohmic structure was stable after annealing up to 350 degrees C as judged from the Auger depth profiles. A current-accelerated stress test was conducted on the device with a current density J(C) = 80kA/cm(2) for 24h, and the current gain showed no degradation after the current stress. The devices were also thermally annealed at 200 degrees C for 3 h and showed almost no change in the electrical parameters after the heat treatment. The results show that the Au-free, fully Cu-metallized InP heterojunction bipolar transistor (HBT) can be realized using non-alloyed ohmic contacts and Pt diffusion barrier.
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    Gold-free fully cu-metallized InGaP/GaAs heterojunction bipolar transistor
    (2005-01-01)
    Chang, SW
    ;
    Chang, EY
    ;
    Biswas, D
    ;
    Lee, CS
    ;
    Chen, KS
    A gold-free, fully Cu-metallized InGaP/GaAs heterejunction bipolar transistor using platinum as the diffusion barrier has been successfully fabricated. The HBT uses Pd/Ge and Pt/Ti/Pt/Cu for n-type and p(+)-type ohmic contacts, respectively, and Ti/Pt/Cu for interconnect metals with platinum as the diffusion barrier. The Ti/Pt/Cu structure was stable during annealing up to 350degreesC judging from the X-ray diffraction (XRD) data and sheet resistance. A current-accelerated stress test was conducted on the device with a current density J(C) = 140 kA/cm(2) for 24 h, and the current gain showed no degradation. The devices were also thermally annealed at 250degreesC,for 24 h and showed little change. We have successfully demonstrated that an Au-free, fully Cu-metallized HBT can be realized using Pt as the diffusion barrier and Pd/Ge and Pt/Ti/Pt/Cu as the ohmic contacts.
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    Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
    (1995-12-01)
    Tsai, MH
    ;
    Sun, SC
    ;
    Lee, CP
    ;
    Chiu, HT
    ;
    Tsai, CE
    Low-resistivity tantalum nitride (TaN) films were deposited by low-pressure metal-organic chemical vapor deposition (MOCVD) using a new precursor tertbutylimidotrisdiethyl amidotantalum. The surface morphology and the step coverage of TaN films were characterized by scanning electron microscopy. The film deposited at 450 degrees C had nearly 100% step coverage and the step coverage decreased to 25% for the films deposited at 650 degrees C, The carbon and oxygen concentrations are about 10 at.% in the CVD TaN films, as determined by Auger electron spectroscopy. From Rutherford backscattering spectroscopy and secondary ion mass spectroscopy analysis, TaN films were found to be effective diffusion barriers between aluminum and silicon up to 550 degrees C. The electrical measurements of diode-leakage current indicate that the Al/TaN/Si structure remained stable up to 500 degrees C, after which Al started to diffuse through the TaN layer and resulted in a higher leakage current.
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    Hybrid-mode computation of propagation and attenuation characteristics of parallel coupled microstrips with finite metallization thickness
    (1997-02-01)
    Kuo, JT
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    Itoh, T
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    The hybrid-mode mixed spectral domain approach (MSDA) is formulated to investigate the dispersion nature of multiple coupled microstrip lines with arbitrary metallization thickness, Incorporated into the solution procedure, a new set of basis functions with delta(-1/3) field singularity near conductor edges is found to be effective in calculating both the phase and attenuation constants, The computation of conductor loss is based on the perturbation procedure, Over a broad band of frequency spectrum, excellent agreement is obtained between the calculated results and existing experiment data for the metallic losses of a single microstrip and effective dielectric constants of coupled lines, The influence of finite metallization thickness on the frequency dependent modal propagation and attenuation characteristics is presented for both a three-line and four-line structure.