學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 17

Electronic reconstruction at a buried ionic-covalent interface driven by surface reactions
(2009-11-01)
Lou, C. -T.
;
Li, H. -D.
;
Chung, J. -Y.
;
Lin, D. -S.
;
Chiang, T. -C.
Lattice-matched ionic NaCl films were grown layer by layer on covalent Ge(100) using cycles of two half reactions (HRs) that involved the alternative adsorption of Cl and Na. The Ge 3d photoemission spectra obtained after full cycles of growth resembled that of clean Ge(100), but came to resemble that of the polar Cl-terminated surface after the subsequent half reaction of Cl adsorption. Concurrently, the Na and Cl core levels of the nanofilms shifted by similar to 1.7 eV between these two interface configurations. Our results demonstrate that reactions on the NaCl surface drive periodic electronic reconstructions at the NaCl-Ge interface.
Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen (Retracted article. See vol. 104, 269901, 2014)
(2009-02-02)
Chang, C. H.
;
Yu, Peichen
;
Yang, C. S.
;
光電工程學系
;
Department of Photonics
Characteristic formation of highly oriented indium-tin-oxide (ITO) nanocolumns is demonstrated using electron-beam evaporation with an obliquely incident nitrogen flux. The nanocolumn material exhibits broadband and omnidirectional antireflective characteristics up to an incidence angle of 70 degrees for the 350-900 nm wavelength range for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis indicate that the superior antireflection arises from the tapered column profiles which collectively function as a gradient-index layer. Since the nanocolumns have a preferential growth direction which follows the incident vapor flux, the azimuthal and polarization dependence of reflectivities are also investigated. The single ITO nanocolumn layer can function as antireflection contacts for light emitting diodes and solar cells.
Electrical bistable memory device based on a poly(styrene-b-4-vinylpyridine) nanostructured diblock copolymer thin film
(2008-11-17)
Huang, Ching-Mao
;
Liu, Yung-Sheng
;
Chen, Chen-Chia
;
Wei, Kung-Hwa
;
Sheu, Jeng-Tzong
This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) diblock copolymer thin film. The Al/PS-b-P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2x10(5), an erase voltage of 0.75 V, a write voltage of -0.5 V, and a retention time of 10(4) s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures.
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
(2008-12-01)
Lin, Chao-Cheng
;
Chang, Ting-
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
(2009)
Lin, Chao-Cheng
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Feng, Li-Wen
An oxygen-incorporated Mo silicide layer was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge-storage characteristics of Mo nanocrystals influenced by Mo oxide and its surrounding oxide were investigated through X-ray photoelectron spectroscopy and electrical measurement. X-ray photoelectron spectral analyses revealed a redox reaction in the oxygen-incorporated Mo silicide layer after rapid thermal annealing at a critical temperature. The memory window and retention were improved because of the reduction of Mo oxide. Furthermore, the double-layer nanocrystal structure was fabricated through the annealed stacked oxygen incorporated Mo silicide layer. A larger memory window and long retention were found for the double-layer nanocrystal structure. We used an energy band diagram to explain the difference in retention characteristics between single- and double-layer structures.
Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
(2009)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chiang, Cheng-Neng
;
Lin, Chao-Cheng
In this work, a NiSiGe mixed film was deposited by the cosputtering approach. The rapidly thermal treatment condition was executed at 600 degrees C for 30 s in nitrogen ambient to form the nanocrystal structure. From the results of the transmission electron microscopy, the annealed NiSiGe film reveals a larger nanocrystal size and density distribution than pure NiSi. X-ray photoelectron spectroscopy analyses were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystal formation during the thermal process. Raman spectroscopy and an energy-dispersive spectrometer also exhibit the compositions of nanocrystals including Ni, Si, and Ge elements. With the better formation process, a remarkable improvement of memory effect is observed by comparing with the NiSi and NiSiGe nanocrystal memory devices. Also, the NiSiGe nanocrystal device shows a better retention characteristic due to the lower quantum confinement effect.
Growth and Field Emission of Reactive Sputtered Pd-PdO Core-Shell Nanoflakes on Platinum
(2009)
Huang, Chien-Jung
;
Pan, Fu-Ming
;
Tzeng, Tai-Cheng
;
Li-Chang
;
Sheu, Jeng-Tzong
Palladium oxide (PdO) was deposited on platinum by reactive sputter deposition, and the PdO thin film grown on the Pt substrate had a flakelike morphology. The nanosized flake had a core-shell structure with a single Pd grain encapsulated by a crystalline PdO surface layer. The formation of the PdO capped nanoflakes was ascribed to a large interfacial stress due to a lattice mismatch between PdO and Pt. Field emission characteristics of the nanoflakes were studied and a field-enhancement factor of 791 was obtained.
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
(2009)
Lin, Chao-Cheng
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
Mo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in SiO(x). Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.
Free carrier dynamics of InN nanorods investigated by time-resolved terahertz spectroscopy
(2009-01-15)
Ahn, H.
;
Chuang, C. -H.
;
Ku, Y. -P.
;
Pan, C. -L.
;
光電工程學系
Ultrafast time-resolved terahertz spectroscopy is employed to investigate the carrier dynamics of indium nitride (InN) nanorod arrays and an epitaxial film. Transient differential transmission of terahertz wave shows that hot carrier cooling and defect-related nonradiative recombination are the common carrier relaxation processes for InN film and nanorods. However, the electrons confined in the narrow structure of nanorods are significantly affected by the carrier diffusion process near the surface, which causes the abnormally long relaxation time for nanorods.
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
(2009-02-09)
Lin, Chao-Cheng
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
We investigated ammonia plasma treatment influence on the nonvolatile memory characteristics of the charge storage layer composed of Mo nanocrystals embedded in nonstoichiometry oxide (SiO(x)). X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window was reduced and the retention and the endurance improved after the treatment. The reduction in the memory window and the improvement in retention were interpreted in terms of the nitrogen passivation of traps in the oxide around Mo nanocrystals. The robust endurance characteristic was attributed the improvement of the quality of the surrounding oxide by nitrogen passivation.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results