學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 23

High Q/V-m hybrid photonic-plasmonic crystal nanowire cavity at telecommunication wavelengths
(2015-01-01)
Chiang, Chih-Kai
;
Chung, Yi-Cheng
;
Cheng, Pi-Ju
;
Wu, Chien-Wei
;
Chang, Shu-Wei
We haw analyzed a hybrid photonic-plasmonic crystal nanocavity consisting of a silicon grating nanowire adjacent to a metal surface with a gain gap between. The hybrid plasmonic cavity modes are highly confined in the gap due to the coupling of photonic crystal cavity modes and surface plasmonic gap modes. Using the finite-element method, we numerically solve guided modes of the hybrid plasmonic waveguide at a wavelength of 1.55 jim. The modal characteristics such as wave guide confinement factors and modal losses of the fundamental hybrid plasmonic modes are explored as a function of the groove depth at various gap heights. After that, we show the band structure of the hybrid crystal modes, corresponding to a wide band gap of 17.8 THz. To effectively trap the optical modes, we introduce a single defect into the hybrid crystal. At a deep sub-wavelength defect length as small as 180 nm, the resonant mode exhibits a high quality factor of 566.5 and an ultrasmall mode volume of 0.00186 (ln)3 at the resonance wavelength of 1.55 gm. In comparison to the conventional photonic crystal nanowire cavity in the absence of metal surface, the figure of merit QIVm is enormously enhanced around 15 times. The proposed nanocavities open up the opportunities for various applications with strong light-matter interaction such as nanolasers and bio sensors.
The growth of pine-leaf-like hierarchical SnO2 nanostructures
(2014-01-01)
Dee, Chang Fu
;
Tiong, Teck Yaw
;
Varghese, Binni
;
Sow, Chorng-Haur
;
Wong, Yuan-Yee
Pine-leaf-like SnO2 hierarchical nanostructures (NSs) were grown by a two-step vapour transport deposition process with a combination of vapour-solid and vapour-liquid-solid mechanisms at the primary and secondary processes, respectively. This type of hierarchical structure consisted of SnO2 trunk with homo-branching nanowires (NWs). The branched NWs connected the trunk NWs at included angles of 56 degrees and 90 degrees for two different types of hierarchical NSs. Based on the thermodynamic calculation, the formation of branched NWs at those angles are all energetically favourable.
新穎材料開發計畫---二六族半磁性半導體磊晶核心設施之運作與新穎物理研究
(2010)
周武清
;
CHOU WU-CHING
;
國立交通大學電子物理學系（所）
以電漿輔助分子束磊晶技術成長各式各樣的二六族半磁性半導體量子結構，提供給國內外物理學家研究新穎的自旋與光電物理外，本研究團隊將對二六族半磁性半導體單量子點自旋物理做深入的研究，並且研究單一量子點於耦合微共振腔中之量子同調操控。
Electrochemical fabrication and magnetic properties of highly ordered silver-nickel core-shell nanowires
(2008-01-31)
Lin, Shih-Chin
;
Chen, San-Yuan
;
Chen, Yun-Tien
;
Cheng, Syh-Yuh
;
交大名義發表
Ordered silver-nickel core-shell nanowire arrays were successfully fabricated by electrodeposition. The ordered silver nanowire arrays embedded in a porous alumina template were first fabricated from an aqueous solution of Ag(NO3)(2) and Ac(NH3). After removing out the template, the obtained silver nanowire arrays were subsequently electrodeposited with nickel at 1.6-2.6 V and 60 degrees C using the electrolyte composed of NiSO4, NiCl2 and H3BO3. Transmission electron microscopy observation revealed that a similar to 15 nm thick nickel film was coated on the surface of the silver nanowires with about 200 nm in diameter. It was found that the silver nanowires with nickel coating showed enhanced magnetic properties in comparison to that of pure silver nanowires. The magnetic force microscope image of silver-nickel core-shell nanowires showed magnetic domain state. In addition, the hysteresis loops of the silver-nickel nanowire arrays showed a coercive field of 180 Oe, almost independent of the applied magnetic field. However, it was observed that a larger magnetic domain was found in parallel direction than that in perpendicular direction. (c) 2007 Elsevier B.V. All rights reserved.
Growth of ZnO nanowires without catalyst on porous silicon
(2004-12-01)
Chang, CC
;
Chang, CS
;
光電工程學系
;
Department of Photonics
Porous silicon (PS) technology is, for the first time, used to grow ZnO nanowires on the surface of a PS substrate with a rough morphology without any catalyst. The characteristics of these nanowires were investigated by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), energy dispersive X-ray (EDX), grazing-angle X-ray diffraction (XRD) and photoluminescence (PL) measurements. Zn vapor condenses easily on the PS surface and forms a wetting layer, but not on the flat Si surface. The PS surface provides a rough surface morphology to form a wetting layer by decreasing the surface energy so that ZnO nanowires can grow without any catalyst. The Zn-rich composition changed during growth; the ratio of zinc to oxygen was near to one at the top part of the nanowires. The probable growth mechanism was the vapor-solid (VS) process. In principle, the selective growth of ZnO nanowires on Si-base devices for optoelectronic application is possible.
The growth of pine-leaf-like hierarchical SnO2 nanostructures
(2014-01-01)
Dee, Chang Fu
;
Tiong, Teck Yaw
;
Varghese, Binni
;
Sow, Chorng-Haur
;
Wong, Yuan-Yee
Pine-leaf-like SnO2 hierarchical nanostructures (NSs) were grown by a two-step vapour transport deposition process with a combination of vapour-solid and vapour-liquid-solid mechanisms at the primary and secondary processes, respectively. This type of hierarchical structure consisted of SnO2 trunk with homo-branching nanowires (NWs). The branched NWs connected the trunk NWs at included angles of 56 degrees and 90 degrees for two different types of hierarchical NSs. Based on the thermodynamic calculation, the formation of branched NWs at those angles are all energetically favourable.
Hydrothermal Formation of Tungsten Trioxide Nanowire Networks on Seed-Free Substrates and Their Properties in Electrochromic Device
(2014-05-01)
Hung, Chung Jung
;
Huang, Yi Hsuan
;
Chen, Chih Hao
;
Lin, Pang
;
Tseng, Tseung Yuen
Facile and cost-efficient hydrothermally grown 3-D tungsten trioxide (WO3) nanowires (NWs) network film on seed-free fluorine-doped tin oxide (FTO) substrates without using additive or capping agent is reported. The NW networks are hexagonal phase and the morphologies are changed by adjusting the pH of precursor solutions. Growth mechanism of WO3 NWs is also extensively discussed. The designed porous film exhibits remarkable enhancement of the electrochromic (EC) properties. In particular, a significant optical modulation (57% at 632 nm), fast color switching speed (bleaching: 7 s and coloration: 21 s), high coloration efficiency (120.3 cm(2) C-1 at 632 nm), high Li+ diffusion coefficient (2.14 x 10(-9) cm(2) s(-1)), and excellent cycling stability (87% after 1000 cycles) are achieved for the 3-D NWs film. The improved EC properties are mainly attributed to the highly porous film, which makes the Li+ diffusion becomes easier and provides larger specific surface area for charge-transfer reactions. Furthermore, we also reported an EC device (50 mm x 50 mm) with a simple two-electrode configuration showing high optical contrast. The 3-D WO3 NWs network film acts as an excellent EC material.
The effects of channel doping concentration for n-type junction-less double-gate poly-Si nanostrip transistors
(2014-05-01)
Liu, Keng-Ming
;
Peng, Fan-I
;
Peng, Kang-Ping
;
Lin, Horng-Chih
;
Huang, Tiao-Yuan
In this study, novel n-type double-gate (DG) junction-less (J-less) polycrystalline silicon (poly-Si) nanostrip transistors with different channel doping concentrations (N-C) have been fabricated and investigated. The effects of channel doping concentration on device characteristics were examined comprehensively in this work. The experimental data show that as the channel doping concentration of the J-less device increases, the threshold voltage (V-TH) becomes more negative. Besides, the drain-induced barrier lowering and the subthreshold swing of the J-less transistors become larger as the channel doping increases. We also found that as the channel doping increases, the off-current (I-OFF) increases and the on-current (I-ON) actually decreases due to the doping-dependent mobility degradation. The conduction mechanisms under different channel doping concentrations were also investigated by TCAD simulation. The experimental results suggest that the n-type DG nanostrip J-less transistor with lower channel doping will have superior device characteristics.
Investigation of p-type junction-less independent double-gate poly-Si nano-strip transistors
(2014-01-01)
Liu, Keng-Ming
;
Lin, Zer-Ming
;
Wu, Jiun-Peng
;
Lin, Horng-Chih
;
Huang, Tiao-Yuan
In this study, novel independent double-gate (IDG) junction-less (J-less) polycrystalline silicon (poly-Si) nano-strip transistors have been fabricated and investigated. Inversion-mode (IM) IDG poly-Si nano-strip transistors with the undoped channel have also been fabricated for comparison. The experimental data show the superior on-state current of J-less transistors over that of IM transistors mainly due to the reduction of the channel resistance (R-ch). However, the drain-induced barrier lowering of the J-less transistors is larger than that of IM transistors but the double-gate (DG) configuration can mitigate this problem to some extent. Besides, the subthreshold swing and its fluctuation of the J-less transistors are worse than those of IM transistors under the single-gate operation. Fortunately, this issue can be significantly improved by the aid of DG configuration according to our experimental results. We also demonstrate the possibility of changing the threshold voltage (V-th) under IDG operation for the J-less IDG nano-strip transistors.
Gold Nanostructures on Flexible Substrates as Electrochemical Dopamine Sensors
(2012-10-01)
Hsu, Ming-Sheng
;
Chen, Yu-Liang
;
Lee, Chi-Young
;
Chiu, Hsin-Tien
;
應用化學系
In this study, we fabricated Au nanowires (NWs), nanoslices (NSs), and nanocorals (NCs) on flexible polyethylene terephthalate (PET) substrates via direct current electrochemical depositions. Without any surface modification, the Au nanostructures were used as the electrodes for dopamine (DA) sensing. Among them, the Au NW electrode performed exceptionally well. The determined linear range for DA detection was 0.2- 600 mu M (N = 3) and the sensitivity was 178 nA/mu M cm(2), while the detection limit was 26 nM (S/N = 3). After 10 repeated measurements, 95% of the original anodic current values were maintained for the nanostructured electrodes. Sequential additions of citric acid (CA, 1 mM), uric acid (UA, saturated), and ascorbic acid (AA, 1 mu M) did not interfere the amperometric response from the addition of DA (0.1 mu M).

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results