學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 11

Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory
(2010-09-01)
Cheng, C. H.
;
Chin, Albert
;
Yeh, F. S.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Using novel stacked covalent-bond-dielectric GeO(x) (GeO) on metal-oxide SrTiO(3) to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 mu W (3.5 mu A at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 10(6) memory window for 10(5)-s retention at 85 degrees C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
(2013-05-01)
Chang, Kuan-Chang
;
Pan, Chih-Hung
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Zhang, Rui
In this letter, we introduced hydrogen ions into titanium metal doped into SiO2 thin film as the insulator of resistive random access memory (RRAM) by supercritical carbon dioxide (SCCO)(2) fluid treatment. After treatment, low resistance state split in to two states, we find the insert RRAM, which means it has an operating polarity opposite from normal RRAM. The difference of the insert RRAM is owing to the resistive switching dominated by hydrogen ions, dissociated from OH bond, which was not by oxygen ions as usual. The current conduction mechanism of insert RRAM was hopping conduction due to the metal titanium reduction reaction through SCCO2.
Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar Array
(2013-01-01)
Lo, Chun-Li
;
Hou, Tuo-Hung
;
Chen, Mei-Chin
;
Huang, Jiun-Jia
;
電子工程學系及電子研究所
This paper reports on comprehensive analytical and numerical circuit analyses on the read margin of the one selector-one resistor (1S1R) resistive-switching crossbar array. These analyses are based on the experimental characteristics of the 1S1R cells and provide a valuable insight into their potential for ultrahigh-density data storage. Three read schemes, namely, one bit-line pull-up (One-BLPU), all bit-line pull-up (All-BLPU), and partial bit-line pull-up (Partial-BLPU), are investigated. In contrast to the One-BLPU scheme, the All-BLPU scheme can realize a large crossbar array of 16 Mb, even when the line resistance is nonneg-ligible because the effective resistance at the sneak current path is substantially less sensitive to the array size. Additionally, the Partial-BLPU scheme can be used to reduce power consumption if random read access is desirable. Finally, the effects of line resistance on the read and write margins are discussed.
Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution
(2013-04-01)
Chou, K. I.
;
Cheng, C. H.
;
Zheng, Z. W.
;
Liu, Ming
;
Chin, Albert
Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-mu W switching power (9 mu A at 3 V; -1 mu A at -3 V), 10(5) cycling endurance, and good retention at 85 degrees C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.
Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer
(2012-06-01)
Lee, Dai-Ying
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Oxygen ion migration is an important factor in the formation and rupture of a conducting filament to cause resistive switching (RS) behavior. A calcium oxide-doped zirconium oxide (CaO:ZrO2) oxygen ion conductor buffer layer is introduced between the Ti/ZrO2 interface of conventional Ti/ZrO2/Pt memory devices to improve their unipolar RS properties. Increasing the CaO doping concentration to 2 mol% introduces higher oxygen vacancy content within the CaO:ZrO2 buffer layer, leading to higher oxygen ion conductivity. This allows more oxygen ions to migrate from the oxygen reservoir laterally and vertically across the 2-mol% CaO:ZrO2 buffer layer to the region where the conducting filament forms and ruptures. Therefore, the Ti/2-mol% CaO:ZrO2/ZrO2/Pt device in this letter exhibits good endurance, high-speed switching (50 ns) without soft errors, stubborn nondestructive readout, and stable retention at 150 degrees C.
Resistive switching mechanisms of V-doped SrZrO3 memory films
(2006-09-01)
Lin, Chun-Chieh
;
Tu, Bing-Chung
;
Lin, Chao-Cheng
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.
Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
(2007-05-01)
Lin, Chih-Yang
;
Wu, Chen-Yu
;
Wu, Chung-Yi
;
Lee, Tzyh-Cheang
;
Yang, Fu-Liang
The influence of top electrode material on the resistive switching properties of ZrO2 -based memory film using Pt as a bottom electrode was investigated in this letter. In comparison with Pt/ZrO2/Pt and Al/ZrO2/Pt devices, the Ti/ZrO2/Pt device exhibits different resistive switching current-voltage (I-V) curve, which can be traced and reproduced by a dc voltage more than 1000 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, the broad dispersions of resistive switching characteristics in the Pt/ZrO2/Pt and Al/ZrO2/Pt devices are generally observed during successive resistive switching, but those dispersions are suppressed by the device using Ti as a top electrode. The reliability results, such as cycling endurance and continuous readout test, are also presented. The write-read-erase-read operations can be over 104 cycles without degradation. No data loss is found upon successive readout after performing various endurance cycles.
Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
(2007-12-01)
Lin, Chun-Chieh
;
Lin, Chih-Yang
;
Lin, Meng-Han
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
In this paper, nonpolar resistive switching behavior is reported for the first time in a SZO-based memory device. The electrode materials used which have different conductivities affect the resistive switching properties of the device. The A1/V:SZO-LNO/Pt device shows nonpolar switching behavior, whereas the A1/V:SZO/LNO device has bipolar switching property. The resistance ratios of these two devices are quite distinct owing to the difference between the resistance of low resistance states. The A1/V:SZO-LNO/Pt device with lower resistive switching voltages (+/- 7 V turn on and 2 V turn off) and higher resistance ratio (10(7)) is more suitable for practical applications compared to the A1/V:SZO/LNO device. The switching speed of the A1/V:SZO-LNO/Pt device is 10 ns, which is the fastest speed that has ever been reported. The conduction mechanisms, nondestructive readout property, retention time, and endurance of this device are also reported in this paper.
Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
(2008-10-01)
Lin, Chih-Yang
;
Lin, Meng-Han
;
Wu, Ming-Chi
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
The stabilization of the resistive switching properties is necessary to realize the memory application of the SrZrO3 (SZO)-based resistive switching devices. During continuous resistive switching cycle, broad variations of the resistive switching parameters of the SZO-based memory devices can be improved by a thin embedded Cr layer. The Cr metal layer is proposed to diffuse into and dope the SZO thin film to produce the space charge region, further reducing the effective resistive switching region. Hence, the good stabilization of the resistive switching properties can be obtained in the SZO films with embedded Cr layer.
Resistive switching properties of SrZrO(3)-based memory films
(2007-04-01)
Lin, Chun-Chieh
;
Lin, Chao-Cheng
;
Tu, Bing-Chung
;
Yu, Jung-Sheng
;
Lin, Chen-Hsi
The resistive switching properties of the sputter-deposited SrZrO(3) (SZO) memory films were investigated in this study. The resistive switching behaviors of the SZO film can be improved by doping with vanadium oxide. The conduction mechanisms of the high and low current states of the 0.3% V-doped SZO (V:SZO) film are ohmic conduction and Frenkel-Poole emission, respectively, which implies the bulk effect of the memory film. The resistive ratio of two current states of the 0.3% V:SZO film remains 1000 times after applying 100 voltage sweeping cycles. Furthermore, the 0.3% V:SZO film shows stable resistive switching properties when measurement is performed at 100 degrees C. The band modulation of the SZO/LNO interface is proposed to explain the forming process of the SZO films. The 0.3% V:SZO memory film has excellent properties, such as high stability, good endurance, and long retention time, which make it a good candidate for next-generation nonvolatile memory application.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results