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Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
(2009)
Lin, Chao-Cheng
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Feng, Li-Wen
An oxygen-incorporated Mo silicide layer was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge-storage characteristics of Mo nanocrystals influenced by Mo oxide and its surrounding oxide were investigated through X-ray photoelectron spectroscopy and electrical measurement. X-ray photoelectron spectral analyses revealed a redox reaction in the oxygen-incorporated Mo silicide layer after rapid thermal annealing at a critical temperature. The memory window and retention were improved because of the reduction of Mo oxide. Furthermore, the double-layer nanocrystal structure was fabricated through the annealed stacked oxygen incorporated Mo silicide layer. A larger memory window and long retention were found for the double-layer nanocrystal structure. We used an energy band diagram to explain the difference in retention characteristics between single- and double-layer structures.
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
(2009)
Lin, Chao-Cheng
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
Mo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in SiO(x). Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
(2009-02-09)
Lin, Chao-Cheng
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
We investigated ammonia plasma treatment influence on the nonvolatile memory characteristics of the charge storage layer composed of Mo nanocrystals embedded in nonstoichiometry oxide (SiO(x)). X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window was reduced and the retention and the endurance improved after the treatment. The reduction in the memory window and the improvement in retention were interpreted in terms of the nitrogen passivation of traps in the oxide around Mo nanocrystals. The robust endurance characteristic was attributed the improvement of the quality of the surrounding oxide by nitrogen passivation.
Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperature
(2009-02-09)
Chen, Jun-Rong
;
Lu, Tien-Chang
;
Wu, Yung-Chi
;
Lin, Shiang-Chi
;
Liu, Wei-Rein
Wide-band gap ZnO semiconductors are attractive materials for the investigation of microcavity exciton polaritons due to the large exciton binding energy and oscillator strength. We report the growth and characterization of bulk ZnO-based hybrid microcavity. The phenomenon of strong exciton-photon coupling at room temperature has been observed in the ZnO-based hybrid microcavity structure, which consists of 30 pair epitaxially grown AlN/AlGaN distributed Bragg reflector (DBR) on the bottom side of the 3/2 lambda thick ZnO cavity and 9 pair SiO(2)/HfO(2) DBR as the top mirror. The cavity quality factor is about 221. The experimental results show good agreement with theoretically calculated exciton-polariton dispersion curves based on transfer matrix method. From the theoretical and experimental exciton-polariton dispersion curves with two different cavity-exciton detuning values, the large vacuum Rabi splitting is estimated to be about 58 meV in the ZnO-based hybrid microcavity.
Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector
(2009-06-15)
Shieh, Jia-Min
;
Yu, Wen-Chien
;
Huang, Jung Y.
;
Wang, Chao-Kei
;
Dai, Bau-Tong
A fully silicon-based metal-oxide-semiconductor field-effect transistor is demonstrated for the detection of near-infrared light. Si nanocrystals (nc-Si) are synthesized in the nanopore channels of mesoporous silica (MS) inserted between two oxide layers to form a complete gate structure of polycrystalline Si/SiO(2)/nc-Si-in-MS/SiO(2) with a polycrystalline Si electrode. Illuminating the gate with near-infrared light, a photoresponsivity as high as 2.8 A/W at 1.55 mu m can be achieved. The improved photoresponsivity is attributed to from optical transitions via interface states and a current amplification mechanism of the device.
Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
(2009-08-03)
Chao, C. L.
;
Chiu, C. H.
;
Lee, Y. J.
;
Kuo, H. C.
;
Liu, Po-Chun
This work proposes a method for fabricating 2 in. freestanding GaN substrates of high crystallographic quality and low residual strain. Arrays of GaN nanorods with sidewalls coated with silicon dioxide (SiO(2)) were randomly arranged on the sapphire substrate as a growth template for subsequent hydride vapor-phase epitaxy (HVPE). The passivation of the sidewalls coated with SiO(2) prevents the coalescence of GaN grains in spaces between the rods, causing them to grow preferentially on the top of individual rods. The proposed method significantly improves GaN crystal quality and results in self-separation from the underlying host sapphire substrate due to the relaxation of thermal strains in the HVPE cooling-down process.
Interfacial layer dependence on device property of high-kappa TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness
(2009-11-23)
Chen, W. B.
;
Chin, Albert
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We have investigated the device property dependence of high dielectric-constant (high-kappa) TiLaO epitaxial-Ge/Si n-type metal-oxide-semiconductor (n-MOS) capacitors on different GeO(2) and SiO(2) interfacial layers. Large capacitance density of 3.3 mu F/cm(2), small equivalent-oxide thickness (EOT) of 0.81 nm and small C-V hysteresis of 19 mV are obtained simultaneously for MOS capacitor using ultrathin SiO(2) interfacial layer, while the device with ultrathin interfacial GeO(2) shows inferior performance of larger 1.1 nm EOT and poor C-V hysteresis of 93 mV. From cross-sectional transmission electron microscopy, secondary ion mass spectroscopy, and x-ray photoelectron spectroscopy analysis, the degraded device performance using GeO(2) interfacial layer is due to the severe Ge outdiffusion, thinned interfacial GeO(2) and thicker gate dielectric after 550 degrees C rapid-thermal anneal.
Rapid Fabrication of Cylindrical Colloidal Crystals and Their Inverse Opals
(2010)
Lai, Chun-Han
;
Huang, Yi-Jui
;
Wu, Pu-Wei
;
Chen, Li-Yin
;
材料科學與工程學系
We employed an electrophoretic deposition technique to prepare cylindrical colloidal crystals (CCCs) from polystyrene (PS) microspheres of 460 and 660 nm diameters using a carbon fiber (CF) with 7 mu m diameter as the substrate. Measurements on the CCC diameter demonstrated growth rates that slowed down as time progressed. Scanning electron microscope images confirmed that the CCCs of 460 nm microspheres formed a face-centered cubic close-packed lattice, whereas an amorphous structure appeared for the CCCs of 660 nm. Subsequently, both CCCs underwent a potentiostatic electroplating to deposit Ni into the interstitial voids among the PS microspheres. After chemical removal of the PS microspheres, we fabricated cylindrical inverse opals (CIOs) in various diameters. As expected, better crystallinity was found on the CIOs of 460 nm microspheres as opposed to the 660 nm ones. The electrical resistivity for both CIOs exhibited a substantial reduction over that of the CF. Our CCCs and CIOs revealed considerable structure stability with excellent surface uniformity. The fabrication scheme enables rapid preparations of CCCs and CIOs in desirable lengths and diameters.
Crystal Quality of 3C-SiC Influenced by the Diffusion Step in the Modified Four-Step Method
(2010)
Chen, Wei-Yu
;
Wang, Wei-Lin
;
Liu, Jui-Min
;
Chen, Chien-Cheng
;
Hwang, Jenn-Chang
The atomic arrangement and bonding characteristics of void-free 3C-SiC/Si(100) grown by the modified four-step method are presented. Without the diffusion step, Si-C bonds are partially formed in the as-carburized layer on Si(100). The ratio of C-C bonds to Si-C bonds is about 7:3, which can be lowered to about 1:9 after the diffusion step at 1350 degrees C for 5 min or at 1300 degrees C for 7 min according to C 1s core level spectra. The residual C-C bonds cannot be removed, which is associated with an irregular atomic arrangement (amorphous) located either at the 3C-SiC/Si(100) interface or at the intersection of twin boundaries in the 3C-SiC buffer layer based on the lattice image taken by transmission electron microscope. The diffusion step helps the formation of Si-C bonds more completely and results in a SiC buffer layer of high quality formed on Si(100) before the growth step. However, twins and stacking faults still appear in the 3C-SiC buffer layer after the diffusion step. The formation mechanism of the 3C-SiC buffer layer is proposed and discussed.
Improved performance and reliability for metal-oxide-semiconductor field-effect-transistor with fluorinated silicate glass passivation layer
(2010-01-11)
Hsieh, Chih-Ren
;
Chen, Yung-Yu
;
Lou, Jen-Chung
;
電機工程學系
;
Department of Electrical and Computer Engineering
The superior characteristics of the fluorinated HfO(2)/SiON gate dielectric are investigated comprehensively. Fluorine is incorporated into the gate dielectric through fluorinated silicate glass (FSG) passivation layer to form fluorinated HfO(2)/SiON dielectric. Fluorine incorporation has been proved to eliminate both bulk and interface trap densities due to Hf-F and Si-F bonds formation, which can strongly reduce trap generation as well as trap-assisted tunneling during subsequently constant voltage stress, and results in improved electrical characteristics and dielectric reliabilities. The results clearly indicate that the fluorinated HfO(2)/SiON gate dielectric using FSG passivation layer becomes a feasible technology for future ultrathin gate dielectric applications.

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