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Now showing 1 - 6 of 6
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    Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
    (2019-09-15)
    Anandan, Deepak
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    Nagarajan, Venkatesan
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    Kakkerla, Ramesh Kumar
    ;
    Yu, Hung Wei
    ;
    Ko, Hua Lun
    In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure from zincblende to wurtzite. Particularly, as group-V molar flow varies from 6.4 x 10(-5) to 8.0 x 10(-5) mol/min, wurtzite segment length of InSb NW increases from 16 +/- 9 nm to 89 +/- 9 nm, whereas zincblende crystal phase is observed for other molar flows. We interpret the observed phase transition to a lower surface energy of In-Sb alloy droplet than pure In-droplet, which makes triple phase line nucleation energetically favorable. This study gives insight on single growth parameter (V/III ratio) change to the InSb NW crystal control, such a technique is essential to selectively tune the crystal phase of single NW for various applications.
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    Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
    (2019-01-15)
    Anandan, Deepak
    ;
    Kakkerla, Ramesh Kumar
    ;
    Yu, Hung Wei
    ;
    Ko, Hua Lun
    ;
    Nagarajan, Venkatesan
    In this study, growth of Au-free InAs/InSb vertical heterostructure (HS) nanowires (NWs) on highly lattice mismatched Si (1 1 1) substrate by metal organic chemical vapor deposition (MOCVD) is demonstrated. Careful selections of InSb growth parameters lead to In-rich growth regime such that direct impingement of growth precursors on top of grown InAs NW (self-assembled) stems result in axial InSb HSs nucleation on InAs stems. The observed indium (In) droplet on InSb HS NW tip shows that InSb HS growth followed a self-catalyzed growth mechanism. InSb HS axial growth rate and morphology are controlled by growth temperature and growth time. A small change in the growth parameters significantly affects In particle accumulation, particle size and its chemical composition, and thus affects the InSb nucleation on the stem. Especially, it is found that (i) growth time of less 10 min yields vertical InSb HS NW on the top of the InAs stem, (ii) as the growth time increases above 10 min, the growth turned to be InSb wrapped InAs/InSb core-shell HS due to coaxial lateral growth. High resolution transmission electron microscopy (HRTEM) study reveals that all the InSb HSs exhibit pure zinc-blende (ZB) crystal structure. The results presented here provide significant guidelines for external catalyst-free InAs/InSb HS NW growth using MOCVD on silicon (Si) substrate for various optoelectronics and electronics applications.
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    Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
    (2018-05-15)
    Kakkerla, Ramesh Kumar
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    Anandan, Deepak
    ;
    Hsiao, Chih-Jen
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    Yu, Hung Wei
    ;
    Singh, Sankalp Kumar
    We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET. (C) 2018 Elsevier B.V. All rights reserved.
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    The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes
    (2011-05-15)
    Tseng, Chi-Che
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    Lin, Wei-Hsun
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    Wu, Shung-Yi
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    Chen, Shu-Han
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    Lin, Shih-Yen
    The light-emitting diode (LED) with a single GaSb QD layer embedded in a GaAs n-i-p structure operated under different injection currents and temperatures is investigated. With increase in injection currents, room-temperature electroluminescence (EL) peak blue shift is observed until a saturation of EL intensity is reached. In the temperature-varying EL measurements, with increase in temperatures. EL peak blue shift and then red shift are observed, which is attributed to the enhanced luminescence of the smaller QDs with increase in temperatures lower than 100 K. The understanding of the operation mechanisms for the device is advantageous for the practical application of type-II LEDs. (C) 2010 Elsevier B.V. All rights reserved.
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    Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperature
    (2013-09-01)
    Lin, Wei-Hsun
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    Wang, Kai-Wei
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    Lin, Shih-Yen
    ;
    Wu, Meng-Chyi
    ;
    光電學院
    The room-temperature photoluminescence (PL) and electroluminescence (EL) exceeding 1.3 mu m are observed for InGaAs-capped GaSb quantum-ring (QR) structures. With increasing In composition, the emission wavelength would shift from 1.18 to 131 mu m. The InGaAs-capped GaSb QRs also exhibit a higher injection current and stronger EL intensity at the same applied voltage. With the observation of low-temperature PL spectra, the transition mechanisms of the standard and InGaAs-capped QRs are further investigated. (c) 2012 Elsevier B.V. All rights reserved.
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    Temperature-dependent photoluminescence and carrier dynamics of standard and coupled type-II GaSb/GaAs quantum rings
    (2013-09-01)
    Lin, Wei-Hsun
    ;
    Wang, Kai-Wei
    ;
    Lin, Shih-Yen
    ;
    Wu, Meng-Chyi
    ;
    光電學院
    Temperature-dependent photoluminescence (PL) and the corresponding carrier dynamics of standard and coupled type-II GaSb/GaAs quantum rings (QRs) are investigated in this article. Compared with standard QRs, the slower PL intensity decay of coupled QRs with increasing temperature is attributed to the depression of thermal quenching. More intense PL intensity is also observed for the coupled-QR sample at room temperature. With further reducing the GaAs spacer layer thickness to 2 nm, near two-times PL enhancement is observed. The results indicate that with the enhanced luminescence intensity of coupled-QR structure, type-II nano-structures may be utilized for light-emitting device applications. (c) 2013 Elsevier B.V. All rights reserved.