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Subject: search.filters.subject.BiFeO3

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Now showing 1 - 8 of 8
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    Exploring Topological Defects in Epitaxial BiFeO3 Thin Films
    (2011-02-01)
    Vasudevan, Rama K.
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    Chen, Yi-Chun
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    Tai, Hsiang-Hua
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    Balke, Nina
    ;
    Wu, Pingping
    Using a combination of piezoresponse force microscopy (PFM) and phase-field modeling, we demonstrate ubiquitous formation of center-type and possible ferroelectric closure domain arrangements during polarization switching near the ferroelastic domain walls in (100) oriented rhombohedral BiFeO3. The formation of these topological defects is determined from the vertical and lateral PFM data and confirmed from the reversible changes in surface topography. These observations provide insight into the mechanisms of tip-induced ferroelastic domain control and suggest that formation of topological defect states under the action of local defect- and tip-induced fields is much more common than previously believed.
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    Tailoring Magnetoelectric Coupling in BiFeO3/La0.7Sr0.3MnO3 Heterostructure through the Interface Engineering
    (2019-03-15)
    Yi, Di
    ;
    Yu, Pu
    ;
    Chen, Yi-Chun
    ;
    Lee, Hsin-Hua
    ;
    He, Qing
    Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO3 (BFO) and La0.7Sr0.3MnO3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.
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    Nondestructive Mapping of Long-Range Dislocation Strain Fields in an Epitaxial Complex Metal Oxide
    (2019-03-01)
    Simons, Hugh
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    Jakobsen, Anders Clemen
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    Ahl, Sonja Rosenlund
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    Poulsen, Henning Friis
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    Pantleon, Wolfgang
    The misfit dislocations formed at heteroepitaxial interfaces create long-ranging strain fields in addition to the epitaxial strain. For systems with strong lattice coupling, such as ferroic oxides, this results in unpredictable and potentially debilitating functionality and device performance. In this work, we use dark-field X-ray microscopy to map the lattice distortions around misfit dislocations in an epitaxial film of bismuth ferrite (BiFeO3), a well-known multiferroic. We demonstrate the ability to precisely quantify weak, long-ranging strain fields and their associated symmetry lowering without modifying the mechanical state of the film. We isolate the screw and edge components of the individual dislocations and show how they result in weak charge heterogeneities via flexoelectric coupling. We show that even systems with small lattice mismatches and additional mechanisms of stress relief (such as mechanical twinning) may still give rise to measurable charge and strain heterogeneities that extend over mesoscopic length scales. This sets more stringent physical limitations on device size, dislocation density, and the achievable degree of lattice mismatch in epitaxial systems.
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    A Strain-Driven Antiferroelectric-to-Ferroelectric Phase Transition in La-Doped BiFeO3 Thin Films on Si
    (2017-09-01)
    Chen, Deyang
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    Nelson, Christopher T.
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    Zhu, Xiaohong
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    Serrao, Claudy R.
    ;
    Clarkson, James D.
    A strain-driven orthorhombic (O) to rhombohedral (R) phase transition is reported in La-doped BiFeO3 thin films on silicon substrates. Biaxial compressive epitaxial strain is found to stabilize the rhombohedral phase at La concentrations beyond the morphotropic phase boundary (MPB). By tailoring the residual strain with film thickness, we demonstrate a mixed O/R phase structure consisting of O phase domains measuring tens of nanometers wide within a predominant R phase matrix. A combination of piezoresponse force microscopy (PFM), transmission electron microscopy (TEM), polarization electric field hysteresis loop (P-E loop), and polarization maps reveal that the O-R structural change is an antiferroelectric to ferroelectric (AFE-FE) phase transition. Using scanning transmission electron microscopy (STEM), an atomically sharp O/R MPB is observed. Moreover, X-ray absorption spectra (XAS) and X-ray linear dichroism (XLD) measurements reveal a change in the antiferromagnetic axis orientation from out of plane (R-phaSe) to in plane (O-p hase). These findings provide direct evidence of spin-charge-lattice coupling in La-doped BiFeO3 thin films. Furthermore, this study opens a new pathway to drive the AFE-FE O-R phase transition and provides a route to study the O/R MPB in these films.
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    Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces
    (2018-02-01)
    Huang, Bo-Chao
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    Yu, Pu
    ;
    Chu, Y. H.
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    Chang, Chia-Seng
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    Ramesh, Ramamoorthy
    We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.
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    Atomic Visualization of the Phase Transition in Highly Strained BiFeO3 Thin Films with Excellent Pyroelectric Response
    (2015-10-01)
    Chiu, Chung-Hua
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    Liang, Wen-I
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    Huang, Chun-Wei
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    Chen, Jul-Yuan
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    Liu, Yun-Ya
    Great attention is paid to that stimulus response of materials, which is a prerequisite for energy harvesting applications. Driven by advances in nanotechnology, the atomic motions, involved in phase transitions and associated with stimulus responses, require detailed investigation on the nanoscale. Recently, strain engineering of BiFeO3 (BFO) has become the subject of broad research interest due to its promising potential in energy conversion applications, such as piezoelectric, pyroelectric and shape memory effect (SME) devices. In this study, an excellent pyroelectric response is associated with reversible phase transitions in mixed-phase BFO films using thermal stimuli. Using an in situ high-resolution transmission electron microscope (HRTEM), we observed that phase transition between rhombohedral-like (R-like) and tetragonal-like (1-like) BFO involved the migration of the phase boundary, which is a prerequisite for the growth of the T-like phase and requires an intermediate phase. Moreover, the origin of the phase transition is attributed to competition between thermodynamic stability and substrate-induced strain, as suggested by phase-field simulations. The results provide a fundamental understanding of the atomic processes that underlie the stimulus response of the strained BFO films and demonstrate the potential of this extraordinary material for novel energy harvesting applications. (C) 2015 Elsevier Ltd. All rights reserved.
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    BiFeO3 Thin Films: A Playground for Exploring Electric-Field Control of Multifunctionalities
    (2015-01-01)
    Yang, Jan-Chi
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    He, Qing
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    Yu, Pu
    ;
    Chu, Ying-Hao
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    材料科學與工程學系
    A promising approach to the next generation of low-power, functional, and green nanoelectronics relies on advances in the electric-field control of lattice, charge, orbital, and spin degrees of freedom in novel materials. The possibility of electric-field control of these multiple materials functionalities offers interesting options across a range of modern technologies, including information communication, computing processes, data storage, active components, and functional electronics. This article reviews electric-field control and modulation of various degrees of freedom through the medium of multiferroic BiFeO3. Coexisting order parameters and inherent couplings in this materials system form a potent playground, enabling direct and indirect manipulation to obtain intriguing properties and functionalities with an electric stimulus. An in-depth understanding of those electrically controlled phenomena and breakthroughs is highlighted, paving a new route toward multifunctional nanoelectronics. This article concludes with a brief discussion on foreseeable challenges as well as future directions.
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    Ultrathin Oriented BiFeO3 Films from Deposition of Atomic Layers with Greatly Improved Leakage and Ferroelectric Properties
    (2014-01-08)
    Liu, Yen-Ting
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    Ku, Ching-Shun
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    Chiu, Shang-Jui
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    Lee, Hsin-Yi
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    Chen, San-Yuan
    Highly (001)-oriented BiFeO3 ultrathin films of total thickness of less than 10 nm were deposited on Si(001) substrates via deposition of atomic layers (ALD) with a LaNiO3 buffer. A radio-frequency (RF)-sputtered sample of the same thickness was prepared for comparison. The ALD combined with interrupted flow and an exchange reaction between Bi and Fe precursors provides a superior method to grow ternary compounds. According to X-ray diffraction, upon deposition at a temperature of less than 550 degrees C, the only phase in the film was BiFeO3. Anomalous fine structure from synchrotron X-ray diffraction certified the valence bonding through the BiFeO3 (001) diffraction signal. The stoichiometric ratio of BiFeO3 obtained from X-ray photoelectron spectroscopy indicated that ALD has a proportion much improved over the RF preparation, and this is also in agreement with the results for diffraction anomalous fine structure. The use of high-resolution transmission electron and atomic force microscopes showed that the layer structure and morphology from ALD presented a satisfactory coverage, more conformal than that with the RF method. The BiFeO3 thin film deposited with ALD shows excellent leakage, improved at least 1000 times with respect to the RF preparation, making this method suitable for the fabrication of ferroelectric random-access memory devices. From the hysteresis loop, the largest remanent polarization was observed as 2P(r) = 2.0 mu C cm(-2).