<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Subject: search.filters.subject.CIGS

Search Results

Now showing 1 - 6 of 6
  • Thumbnail Image
    Item type:Item,
    A Comprehensive Study of One-Step Selenization Process for Cu(In1-xGax) Se-2 Thin Film Solar Cells
    (2017-03-21)
    Chen, Shih-Chen
    ;
    Wang, Sheng-Wen
    ;
    Kuo, Shou-Yi
    ;
    Juang, Jenh-Yih
    ;
    Lee, Po-Tsung
    In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn1-xGaxSe2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H2Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe2 layer was also observed. Due to the significant microstructural improvement, the current-voltage (J-V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.
  • Thumbnail Image
    Item type:Item,
    Effect of Selenization Processes on CIGS Solar Cell Performance
    (2018-07-01)
    Wu, C. H.
    ;
    Wu, P. W.
    ;
    Chen, J. H.
    ;
    Kao, J. Y.
    ;
    Hsu, C. Y.
    Cu(In, Ga)Se-2 (CIGS) films were fabricated by a two-step process method using sputtering from Cu0.7Ga0.3 and In targets. The metallic precursor structures of In/CuGa/In were prepared, and CuGa film was adjusted to the thicknesses of 150, 200, 250 and 300 nm, in order to optimize the CIGS film. After selenization, three independent CIGS (112), CIGS (220/204) and CIGS (312/116) began to crystallize at similar to 280 degrees C and phase peaks continued growing until 560 degrees C. Experimental results showed that with a single stage selenization method, the excessive stoichiometry of the CIGS films was obtained. Using three sequential stages for the selenization process, with a annealing time of 20 min, the stoichiometry of the CIGS absorbers with the Cu/(In + Ga) and Ga/(In + Ga) showed atomic ratios of 0.94 and 0.34, respectively. The intensity of the (112) XRD diffraction peak became stronger, indicating an improvement in the crystallinity. Raman spectra of CIGS absorbers showed a main peak (174 cm(-1)) and two weak signals (212 and 231 cm(-1)). TEM image for electron diffraction pattern showed that the grains were randomly oriented. CIGS solar cell device prepared with a proper selenization, a maximum efficiency of 12.45% was obtained.
  • Thumbnail Image
    Item type:Item,
    Growth and characterization of Cu(In,Ga)Se-2 thin films by nanosecond and femtosecond pulsed laser deposition
    (2014-06-02)
    Chen, Shih-Chen
    ;
    Hsieh, Dan-Hua
    ;
    Jiang, Hsin
    ;
    Liao, Yu-Kuang
    ;
    Lai, Fang-I
    In this work, CuIn1-xGaxSe2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu-2 (-) Se-x, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.
  • Thumbnail Image
    Item type:Item,
    A look into the origin of shunt leakage current of Cu(In,Ga)Se-2 solar cells via experimental and simulation methods
    (2013-10-01)
    Liao, Yu-Kuang
    ;
    Kuo, Shou-Yi
    ;
    Hsieh, Ming-Yang
    ;
    Lai, Fang-I
    ;
    Kao, Ming-Hsuan
    This study investigates how to apply space-charge-limited (SCL) current to describe shunt leakage current in a CIGS solar cell. Possible factors inducing SCL current have been observed through conductive atomic force microscopy (C-AFM), which supports the SCL current theory, describing the shunt current of a CIGS solar cell. In simulations derived from experimental data, deviation of dark IV curves is due to flaws in the real device. These flaws are absent in simulation, but investigation verifies the characteristics of SCL current component's experimental IV curves within shunt leakage current. A device with a metal/CIGS/metal structure could simulate SCL current and confirm its characteristics. Such a simulated structure, representing flaws inserted into a CIGS solar cell, generates the same dark-current behavior revealed in experimental dark IV curves. This study investigates the response of dark current to varying sizes of the flaw within the CIGS solar cell. (C) 2013 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Investigation of the (Cu, Ga) InSe2 thin film with different pairs of CuGa/In sputtered layers
    (2012)
    Hsu, Yu-Ting
    ;
    Huang, Kai-Feng
    ;
    Tsai, Shang-I
    ;
    Lan, Wen-How
    ;
    Yueh, Ming
    Thin film samples of (Cu,Ga) InSe2 (CIGS) were prepared by DC magnetron sputtering and the selenisation process onto soda lime glass substrates. All samples had the same deposition conditions, and the optimal sputtering thickness of samples with one CuGa/In pair and two CuGa/In pairs are also the same. After sample deposition, X-ray diffraction (XRD), scanning electron microscope (SEM) and Hall effect measurements were used to characterize the properties of these samples. From XRD measurement results, excepting an extra small CuSe peak existing in the samples with two CuGa/In pairs, the XRD peaks of all samples are perfectly matched with the phase diagram of CuGa0.3In0.7Se2 material. It was also found that the grain sizes of the samples with one CuGa/In pair are larger than those with two CuGa/In pairs from SEM images. All these observations on samples with two CuGa/In pairs can be attributed to the fact that the less In incorporation in CIGS films, which it has been proven that the sample with low In-to-CuGa ratio has stronger CuSe peak from XRD result. Furthermore, the p-type carrier characteristics can be observed for all samples from Hall measurement results. The carrier mobility and concentration of the samples with one CuGa/In pair can be achieved as high as 15.28 cm(2)/Vs and as low as 1.50x10(16) cm(-3), respectively, while the carrier mobility and concentration of the ones with two CuGa/In pairs can be achieved as 6.4 cm(2)/Vs and 6.27x10(17) cm(-3), respectively. The results of superior electrical properties of samples with one CuGa/In pair agree well with the observations form XRD and SEM results. In the final, the optimal value of In-to-CuGa ratio during CuGa/In layers deposition in this study is 0.625.
  • Thumbnail Image
    Item type:Item,
    Characterization of large area Cu(In,Ga)Se-2 nanotip arrays via photoluminescence
    (2012)
    Liao, Yu-Kuang
    ;
    Lin, Woei-Tyng
    ;
    Hsieh, Dan-Hua
    ;
    Kuo, Shou-Yi
    ;
    Lai, Fang-I
    In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se-2 nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar+ milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor.