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Novel cleaning solutions for polysilicon film post chemical mechanical polishing
(2000-07-01)
Pan, TM
;
Lei, TF
;
Chen, CC
;
Chao, TS
;
Liaw, MC
Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH4OH+H2O) alkaline aqueous solution to enhance removal of metallic and organic contamination, From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.
Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane
(2001-05-01)
Chang, TC
;
Liu, PT
;
Tsai, TM
;
Yeh, FS
;
Tseng, TY
The characteristics of post-chemical mechanical polishing (post-CMP) low-k hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH3-plasma treatment to improve the characteristics of post-CMP HSQ film. Both of the leakage current and dielectric constant of NH3 plasma-treated HSQ are significantly decreased as compared with those of untreated HSQ. NH3 plasma treatment slightly nitridates the surfaces of the polished HSQ film. The thin nitride layer prevents moisture absorption in the post-CMP HSQ. As a result, the dielectric degradation of HSQ after the CMP process can be effectively recovered using the NH3 plasma treatment.
Comparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si film
(2001-11-01)
Pan, TM
;
Lei, TF
;
Ko, FH
;
Chao, TS
;
Chiu, TH
In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor.
Pattern effects on planarization efficiency of Cu electropolishing
(2002-12-01)
Chang, SC
;
Shieh, JM
;
Huang, CC
;
Dai, BT
;
Feng, MS
Cu electropolishing has recently been introduced to replace Cu-chemical mechanical polishing (CMP). In this work, we found that when the space width is fixed, the planarization efficiency (PE) decreases with increasing line width. When line width is fixed, the PE value decreases as space width increases. Furthermore, the average roughness (R,) of blanket Cu films decreases as polishing time increases. After electropolishing, the resistivity of polished films is not obviously changed.
Device transfer technology by backside etching (DTBE) for poly-Si thin-film transistors on glass/plastic substrate
(2003-09-15)
Wang, SC
;
Yeh, CF
;
Huang, CK
;
Dai, YT
;
電子工程學系及電子研究所
This work presents a novel method entitled "device transfer by backside etching (DTBE)" for transferring thin-film devices from Si wafers to a glass or plastic substrate. First, high performance poly-Si thin-film transistors (TFTs) were fabricated on a Si wafer and then adhered to glass or plastic substrates. The remaining Si was removed delicately using wafer. backside chemical-mechanical polishing (CMP) and wet chemical etching. The devices after transferring exhibit comparable electrical characteristics to the original ones on Si substrates. The new transfer scheme has quite attractive applications for fabricating high-quality displays on low-cost substrates with low melting temperatures.
The influence of abrasive particle size in copper chemical mechanical planarization
(2013-09-01)
Wei, Kuo-Hsiu
;
Wang, Yu-Sheng
;
Liu, Chuan-Pu
;
Chen, Kei-Wei
;
Wang, Ying-Lang
There are many kinds of commercial slurries used in Cu CMP. Major components include an oxidizing agent, complexing agents, inhibitors, and abrasives. We analyze the abrasive particle size by TEM and light scattering. Cu CMP polishing mechanism is also discussed under different particle size distribution. The complexing agent transportation will be the rate determining step when a small abrasive is insufficient, but the copper hydroxide removal rate will determine the overall polishing rate when the amount of smaller particles is enough. (C) 2012 Elsevier B.V. All rights reserved.
Parameter optimization and design aspect for electrocoagulation of silica nano-particles in wafer polishing wastewater
(2006)
Den, W
;
Huang, C
;
環境工程研究所
;
Institute of Environmental Engineering
A systematic procedure has been proposed for the design of a multi-channel, continuous-flow electrocoagulation reactor of mono-polar configuration for the removal of sub-micron particles from wastewater. Using the chemical-mechanical-planarization (CMP) process as the target source of wastewater, a series of laboratory-scale studies were conducted to determine the required operating conditions for the efficient removal of the ultrafine particles. These operating criteria included charge loading ( >= 8 F m(-3)), current density ( >= 5.7 A m(-2)), hydraulic retention time ( >= 60 min), as well as the initially operational pH (7 similar to 10). Furthermore, a steady-state transport equation with second-order reaction kinetics was employed to describe the rate of coagulation as the rate-limiting factor, The actual kinetic constant determined from the laboratory-scale experiments was approximately 1.2 x 10(-21) m(3) s(-1), which was three orders of magnitude smaller than that calculated based on Brownian diffusion during the coagulation. The model was subsequently validated with a series of experiments using a pilot-scale electro-coagulation reactor geometrically similar to the laboratory-scale reactor with nearly twenty times volumetric scale-up.
Novel slurry solution for dishing elimination in copper process beyond 0.1-mu m technology
(2006-03-01)
Chen, KW
;
Wang, YL
;
Liu, CP
;
Chang, L
;
Li, FY
The reduction of the copper dishing was investigated by optimizing the copper CMP processes. The reduction method is a novel copper slurry with the organic passivation agent used during the copper polishing to reduce the copper dishing level. The passivation mechanism of the copper polishing was proposed. With the optimized condition of the copper ECD and CMP, the resistivity deviation of 180-mu m square metal pads with 10-80% pattern densities was reduced from over 30% to less than 10%. The amount of the copper dishing was reduced from around 150 nm to less than 30 nm. Finally, 10% increase of wafer yield and better process reliability were achieved. (c) 2005 Elsevier B.V. All rights reserved.
A novel shallow trench isolation technique
(1997-03-01)
Cheng, JY
;
Lei, TF
;
Chao, TS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Shallow-trench isolation processes which involve refilling using deposition of oxide and polysilicon were investigated. Our results show that the oxide-filled shallow-trench isolation technology based on chemical-mechanical polishing (CMP) is difficult to control and results in poor uniformity. Use of this technology also involves in the dishing effect in wide field regions. However, shallow-trench isolation technology using a masking nitride layer, polysilicon refill, the CMP process with high etch selectivity, and local oxidation of polysilicon is easily implemented and absolutely field oxide encroachment (bird's beak) free. Although the CMP process results in the dishing effect in wide field regions, the local oxidation of polysilicon can reduce the amount of dishing. The polysilicon-filled shallow-trench isolation process can also achieve excellent uniformity across 6-inch diameter silicon wafers due to the high etching selectivity of polysilicon to chemical-vapor-deposited (CVD) oxide and SiN. Moreover, the n(+)/p junction leakage current of polysilicon-filled shallow trenches is comparable to that of oxide-filled shallow trenches. This simple and easily controllable process is a very promising candidate for shallow trench isolation.

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