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Subject: search.filters.subject.Cu

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Now showing 1 - 10 of 16
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    Highly (111)-oriented Nanotwinned Cu for High Fatigue Resistance in fan-out wafer-level packaging
    (2019-01-01)
    Li, Yu-Jin
    ;
    Theng, Chih-Han
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    Tseng, I-Hsin
    ;
    Chen, Chih
    ;
    Lin, Benson
    Fanout wafer level packaging is a potential solution for combining high electrical performance and low cost. However, with the shrinkage of the package, the mechanical reliability of the copper redistribution layer becomes an important issue. However, based on the processing of fan out packaging, the copper lines were annealed several times during the process. The annealing process is harmful to traditional strengthen mechanisms, but not to columnar grains with high density twinning structure. In this study, the technology of electroplating highly <111>-oriented copper lines was introduced to solve the reliability issue in copper RDLs. By the nature of nano-twinned Cu, the performance of thermal cycling test (TCT) lifetime is much better than normal copper, and the failure mechanisms were discussed in this study.
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    A numerical analysis of progressive and abrupt reset in conductive bridging RRAM
    (2016-06)
    Berco, Dan
    ;
    Tseng, Tseung-Yuen
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The authors investigate the conduction filament (CF) properties of a Cu- based conductive bridging resistive memory device by implementing a numerical simulation of the low and high resistive states, starting from a random initial distribution of oxygen vacancies (OV) defects states in the resistive switching layer (RSL) to a formed CF and ending in a ruptured state. A calculation approach which accounts for both the statistical nature of the system and the synergetic effect of OV and Cu species on the overall conductance is presented. By defining a disorder parameter, the correlation between the OV initial distribution and the CF reset behavior is analyzed. A dependence of the reset transition, being either abrupt or progressive, on the physical shape of the CF which in turn is affected by this disorder is shown to exist based on the simulation results.
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    Formation behavior of high-T-c Tl-based superconductors
    (1999-02-01)
    Koo, HS
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    Lo, JR
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    Tseng, TY
    ;
    Lin, CS
    ;
    電子工程學系及電子研究所
    The effects of Ca, Cu, and Ca-Cu richness on the formation behavior and physical characteristics of high-T-c Tl-based superconductors were investigated systematically. In addition to sintering temperature and time, intermediate phases which proved important to the formation and properties of nearly single-phase, triple-CuO-layers Tl2Ba2Ca2Cu3Oy superconductors and optimal processing conditions were also investigated. Ca and Ca-Cu richness introduced positive effects on the properties of nearly single-phase Tl2Ba2Ca2Cu3Oy superconductors and helps in the formation of the appropriate intermediate phases, whereas Cu richness produced a negative effect. The higher sintering temperatures of the specimens accounted for the tailing of electrical resistance before the critical zero resistance temperature was approached, and for the instability of the superconducting phase. Lower post-annealing temperatures of the bulk samples slightly improved the superconducting properties. The resultant bulk Tl-based superconductors can be used as a Tl vapor source for the formation of superconducting thin films within a closed system.
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    Dielectric anisotropy in the integration of Cu-SiLK (TM) system
    (2008-01-01)
    Tseng, Hal-Sin
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    Chiou, Bi-Shiou
    ;
    Wu, Wen-Fa
    ;
    Ho, Chia-Cheng
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    電子工程學系及電子研究所
    As device density and performance continue to improve, low dielectric constant (k) materials are needed for interlevel dielectric (ILD) applications. The dielectric anisotropy of polymers with low k is an important property to consider for developing ILD. This is on-going research on the integration aspects of Cu-SiLK(TM) system. In this study, the dielectric anisotropy of SiLK polymer was evaluated with two test structures: the metal-insulator-metal (MIM) parallel capacitor structure for the out-of-phase dielectric constant (k(perpendicular to)) and comb-and-serpentine interdigitated structure for the in-plane dielectric constant (k(parallel to)). A k(perpendicular to) of 2.65, a k(parallel to) of 2.75, and a dielectric anisotropy of 3.77% were obtained for SiLK. However, SiLK exhibits larger leakage current as compared to amorphous SiO2 films. The reliability issue on the integration of Cu-SiLK is discussed. (C) 2007 Elsevier B.V. All rights reserved.
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    Reactively sputtered amorphous TaSixNy films serving as barrier layer against copper diffusion
    (2001-06-01)
    Lin, CL
    ;
    Ku, SR
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Reactively sputtered amorphous TaSixNy (x = 1.4, v = 2.5) films of different thicknesses (5 to 40 nm) serving as diffusion barriers were studied for Cu metallization. The Cu/TaSixNy/p(+)n junction diodes with 5-nm-thick TaSixNy barriers were able to sustain a 30 min thermal annealing at temperatures up to 400 degreesC without degradation of the electrical characteristics. With thicker barriers of 10, 20- and 40-nm-thick TaSixNy layers, the thermal stability temperatures of the Cu/TaSixNy/p(+)n junction diodes were increased to 500, 550 and 650 degreesC, respectively. The amorphism, of TaSixNy films on Si substrates remains unchanged at temperatures up to 800 degreesC, whereas the presence of a Cu overlayer on the surface of the TaSixNy/Si structure accelerates the formation of Ta-silicide. Failure of the amorphous TaSixNy diffusion barrier is presumably due to Cu diffusion through the barrier layer by way of localized defects.
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    Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
    (2002-08-01)
    Shieh, JM
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    Chang, SC
    ;
    Dai, BT
    ;
    Feng, MS
    ;
    材料科學與工程學系
    Complete filling of 0.13-mum vias and deposition of Cu with a low resistivity of about 2.3 muOmega(.)cm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteristic realized by the addition of 2ABT, the film resistivity and the activation energy for thermal grain growth were similar to those for electrolytes without it. After rapid thermal annealing (RTA) at 400degreesC for 30 s, the resistivity was further reduced to similar to1.9 muOmega(.)cm.
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    Investigation of carrying agents on microstructure of electroplated Cu films
    (2002-11-01)
    Shieh, JM
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    Chang, SC
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    Dai, BT
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    Feng, MS
    ;
    材料科學與工程學系
    Adding high molecular-weight polyethylene glycol (PEG) as a carrying agent benefits Cu electroplating from the viewpoint of an increase in both filling capability and films' conductivity, when plated in a lower current-density region. On electroplating in a higher current-density region, a gradually decreasing grain size from the top to bottom of Cu films occurs in the electrolyte without PEG or with PEG200. In comparison, sharp grains are formed for the mentioned multi-domain crystallization for those films deposited by the electrolyte containing PEG2000 or PEG6000 due to its lower surface tension which facilitates grain growth along the higher electric field. The used concentration of PEG was flexible due to the fact that the surface morphology, resistivity and deposition rate of deposited films remained almost unchanged over a wide PEG concentration range.
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    Pattern effects on planarization efficiency of Cu electropolishing
    (2002-12-01)
    Chang, SC
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    Shieh, JM
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    Huang, CC
    ;
    Dai, BT
    ;
    Feng, MS
    Cu electropolishing has recently been introduced to replace Cu-chemical mechanical polishing (CMP). In this work, we found that when the space width is fixed, the planarization efficiency (PE) decreases with increasing line width. When line width is fixed, the PE value decreases as space width increases. Furthermore, the average roughness (R,) of blanket Cu films decreases as polishing time increases. After electropolishing, the resistivity of polished films is not obviously changed.
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    Novel post CMP cleaning using buffered HF solution and ozone water
    (2003-06-30)
    Yeh, CF
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    Hsiao, CW
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    Lee, WS
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    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    Post chemical mechanical polishing (CMP) cleaning is a key process for copper (Cu) CMP in dual damascene interconnection technology. During the post CMP cleaning, it is an important issue to minimize organic and Cu contamination residues on the dielectric surface. This study proposed a novel post CMP cleaning using HAL buffer hydrofluoric (BHF) solution and ozone (O-3) water cleaning. The performance of the proposed cleaning technology was investigated and compared to conventional citric solution cleaning, which is currently used in post Cu CMP cleaning. From roughness, contamination residues and electrical characteristics, the proposed cleaning technology showed better performance than citric solution cleaning did. This excellent cleaning performance is attributed to the surface etching and contamination elimination effect of HAL BHF solution and O-3 water. Based on the experimental results, the proposed cleaning technology is feasible and superior to the conventional post CMP cleaning. (C) 2003 Elsevier Science B.V. All rights reserved.